# AO4407AL

**Alpha & Omega Semicon** · MOSFETs · SOIC-8

AO4407AL from Alpha & Omega Semicon, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, one of three source pins (S) tied together; the drain-source voltage rating is -30V. |
| 2 | S | passive | Source of the P-channel MOSFET, one of three source pins (S) tied together; continuous drain current is -12A at TA=25°C. |
| 3 | S | passive | Source of the P-channel MOSFET, one of three source pins (S) tied together; body-diode continuous current is -3A max. |
| 4 | G | input | Gate of the P-channel MOSFET, with a gate-source rating of ±25V and a threshold of -1.7V min to -3V max at ID=-250µA. |
| 5 | D | passive | Drain of the P-channel MOSFET, one of four drain pins (D) tied together; pulsed drain current is -60A max. |
| 6 | D | passive | Drain of the P-channel MOSFET, one of four drain pins (D) tied together; RDS(ON) is below 13mΩ at VGS=-10V. |
| 7 | D | passive | Drain of the P-channel MOSFET, one of four drain pins (D) tied together; the drain-source voltage rating is -30V. |
| 8 | D | passive | Drain of the P-channel MOSFET, one of four drain pins (D) tied together; the maximum junction temperature is 150°C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Alpha & Omega Semicon |
| Package | SOIC-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | -30 | V | TA=25°C | 1 |
| Gate-Source Voltage | VGS | -25 |  | 25 | V | TA=25°C | 1 |
| Continuous Drain Current | ID |  |  | -12 | A | TA=25°C | 1 |
| Continuous Drain Current | ID |  |  | -10 | A | TA=70°C | 1 |
| Pulsed Drain Current | IDM |  |  | -60 | A |  | 1 |
| Avalanche Current | IAR |  |  | -26 | A |  | 1 |
| Repetitive avalanche energy | EAR |  |  | 101 | mJ | L=0.3mH | 1 |
| Power Dissipation | PD |  |  | 3.1 | W | TA=25°C | 1 |
| Power Dissipation | PD |  |  | 2 | W | TA=70°C | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 1 |
| Junction-to-Ambient thermal resistance | RθJA |  | 32 | 40 | °C/W | t ≤ 10s | 1 |
| Junction-to-Ambient thermal resistance | RθJA |  | 60 | 75 | °C/W | Steady State | 1 |
| Junction-to-Lead thermal resistance | RθJL |  | 17 | 24 | °C/W | Steady State | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -30 |  |  | V | ID = -250µA, VGS = 0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | µA | VDS = -30V, VGS = 0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -5 | µA | VDS = -30V, VGS = 0V, TJ = 55°C | 2 |
| Gate-Body leakage current | IGSS | -100 |  | 100 | nA | VDS = 0V, VGS = ±25V | 2 |
| Gate Threshold Voltage | VGS(th) | -1.7 | -2.3 | -3 | V | VDS = VGS, ID = -250µA | 2 |
| On state drain current | ID(ON) | -60 |  |  | A | VGS = -10V, VDS = -5V | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 8.5 | 11 | mΩ | VGS = -20V, ID = -12A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 11.5 | 15 | mΩ | TJ=125°C | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 10 | 13 | mΩ | VGS = -10V, ID = -12A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 12.7 | 17 | mΩ | VGS = -6V, ID = -10A | 2 |
| Forward Transconductance | gFS |  | 21 |  | S | VDS = -5V, ID = -10A | 2 |
| Diode Forward Voltage | VSD |  | -0.7 | -1 | V | IS = -1A, VGS = 0V | 2 |
| Maximum Body-Diode Continuous Current | IS |  |  | -3 | A |  | 2 |
| Input Capacitance | Ciss |  | 2060 | 2600 | pF | VGS=0V, VDS=-15V, f=1MHz | 2 |
| Gate resistance | Rg |  | 2.4 | 3.6 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge | Qg |  | 30 | 39 | nC | VGS=-10V, VDS=-15V, ID=-12A | 2 |
| Body Diode Reverse Recovery Time | trr |  | 30 | 40 | ns | IF=-12A, dI/dt=100A/µs | 2 |
| Output Capacitance | Coss |  | 370 |  | pF | VGS=0V, VDS=-15V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 295 |  | pF | VGS=0V, VDS=-15V, f=1MHz | 2 |
| Gate Source Charge | Qgs |  | 4.6 |  | nC | VGS=-10V, VDS=-15V, ID=-12A | 2 |
| Gate Drain Charge | Qgd |  | 10 |  | nC | VGS=-10V, VDS=-15V, ID=-12A | 2 |
| Turn-On DelayTime | tD(on) |  | 11 |  | ns | VGS=-10V, VDS=-15V, RL=1.25Ω, RGEN=3Ω | 2 |
| Turn-On Rise Time | tr |  | 9.4 |  | ns | VGS=-10V, VDS=-15V, RL=1.25Ω, RGEN=3Ω | 2 |
| Turn-Off DelayTime | tD(off) |  | 24 |  | ns | VGS=-10V, VDS=-15V, RL=1.25Ω, RGEN=3Ω | 2 |
| Turn-Off Fall Time | tf |  | 12 |  | ns | VGS=-10V, VDS=-15V, RL=1.25Ω, RGEN=3Ω | 2 |
| Body Diode Reverse Recovery Charge | Qrr |  | 22 |  | nC | IF=-12A, dI/dt=100A/µs | 2 |

## CAD (KiCad official)

- Symbol: `AO4407AL`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files: `ao4407al-etched.step` / `ao4407al-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ao4407al.step` / `ao4407al.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Alpha & Omega Semicon datasheet](docs/ao4407al-datasheet.pdf) (5 pp, sha256 `27591609b4ba7826`, retrieved 2026-10-26, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ao4407al-datasheet.pdf)