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AO4407AL

Public Made by Adom

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Alpha & Omega Semicon MOSFETs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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AO4407AL

Alpha & Omega Semicon · MOSFETs · SOIC-8

AO4407AL from Alpha & Omega Semicon, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET, one of three source pins (S) tied together; the drain-source voltage rating is -30V.
2 S passive Source of the P-channel MOSFET, one of three source pins (S) tied together; continuous drain current is -12A at TA=25°C.
3 S passive Source of the P-channel MOSFET, one of three source pins (S) tied together; body-diode continuous current is -3A max.
4 G input Gate of the P-channel MOSFET, with a gate-source rating of ±25V and a threshold of -1.7V min to -3V max at ID=-250µA.
5 D passive Drain of the P-channel MOSFET, one of four drain pins (D) tied together; pulsed drain current is -60A max.
6 D passive Drain of the P-channel MOSFET, one of four drain pins (D) tied together; RDS(ON) is below 13mΩ at VGS=-10V.
7 D passive Drain of the P-channel MOSFET, one of four drain pins (D) tied together; the drain-source voltage rating is -30V.
8 D passive Drain of the P-channel MOSFET, one of four drain pins (D) tied together; the maximum junction temperature is 150°C.

Key specifications

Parameter Value
Manufacturer Alpha & Omega Semicon
Package SOIC-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V TA=25°C 1
Gate-Source Voltage VGS -25 25 V TA=25°C 1
Continuous Drain Current ID -12 A TA=25°C 1
Continuous Drain Current ID -10 A TA=70°C 1
Pulsed Drain Current IDM -60 A 1
Avalanche Current IAR -26 A 1
Repetitive avalanche energy EAR 101 mJ L=0.3mH 1
Power Dissipation PD 3.1 W TA=25°C 1
Power Dissipation PD 2 W TA=70°C 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Junction-to-Ambient thermal resistance RθJA 32 40 °C/W t ≤ 10s 1
Junction-to-Ambient thermal resistance RθJA 60 75 °C/W Steady State 1
Junction-to-Lead thermal resistance RθJL 17 24 °C/W Steady State 1
Drain-Source Breakdown Voltage BVDSS -30 V ID = -250µA, VGS = 0V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -30V, VGS = 0V 2
Zero Gate Voltage Drain Current IDSS -5 µA VDS = -30V, VGS = 0V, TJ = 55°C 2
Gate-Body leakage current IGSS -100 100 nA VDS = 0V, VGS = ±25V 2
Gate Threshold Voltage VGS(th) -1.7 -2.3 -3 V VDS = VGS, ID = -250µA 2
On state drain current ID(ON) -60 A VGS = -10V, VDS = -5V 2
Static Drain-Source On-Resistance RDS(ON) 8.5 11 mΩ VGS = -20V, ID = -12A 2
Static Drain-Source On-Resistance RDS(ON) 11.5 15 mΩ TJ=125°C 2
Static Drain-Source On-Resistance RDS(ON) 10 13 mΩ VGS = -10V, ID = -12A 2
Static Drain-Source On-Resistance RDS(ON) 12.7 17 mΩ VGS = -6V, ID = -10A 2
Forward Transconductance gFS 21 S VDS = -5V, ID = -10A 2
Diode Forward Voltage VSD -0.7 -1 V IS = -1A, VGS = 0V 2
Maximum Body-Diode Continuous Current IS -3 A 2
Input Capacitance Ciss 2060 2600 pF VGS=0V, VDS=-15V, f=1MHz 2
Gate resistance Rg 2.4 3.6 Ω VGS=0V, VDS=0V, f=1MHz 2
Total Gate Charge Qg 30 39 nC VGS=-10V, VDS=-15V, ID=-12A 2
Body Diode Reverse Recovery Time trr 30 40 ns IF=-12A, dI/dt=100A/µs 2
Output Capacitance Coss 370 pF VGS=0V, VDS=-15V, f=1MHz 2
Reverse Transfer Capacitance Crss 295 pF VGS=0V, VDS=-15V, f=1MHz 2
Gate Source Charge Qgs 4.6 nC VGS=-10V, VDS=-15V, ID=-12A 2
Gate Drain Charge Qgd 10 nC VGS=-10V, VDS=-15V, ID=-12A 2
Turn-On DelayTime tD(on) 11 ns VGS=-10V, VDS=-15V, RL=1.25Ω, RGEN=3Ω 2
Turn-On Rise Time tr 9.4 ns VGS=-10V, VDS=-15V, RL=1.25Ω, RGEN=3Ω 2
Turn-Off DelayTime tD(off) 24 ns VGS=-10V, VDS=-15V, RL=1.25Ω, RGEN=3Ω 2
Turn-Off Fall Time tf 12 ns VGS=-10V, VDS=-15V, RL=1.25Ω, RGEN=3Ω 2
Body Diode Reverse Recovery Charge Qrr 22 nC IF=-12A, dI/dt=100A/µs 2

CAD (KiCad official)

  • Symbol: AO4407AL
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: ao4407al-etched.step / ao4407al-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao4407al.step / ao4407al.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Alpha & Omega Semicon datasheet (5 pp, sha256 27591609b4ba7826, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF