component
AO4407A
Public Made by Adomby adom
UMW MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ao4407a: specified limits as data (metadata.characteristics, 25 rows from the datasheet)
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20d ago
AO4407A
UMW · MOSFETs · SOP-8
AO4407A from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | SOURCE pin of the P-channel MOSFET; pins 1, 2 and 3 are all source and are tied together internally in the datasheet's pinning table, with the absolute maximum VDS of -30V applying across drain and source. |
| 2 | S | passive | SOURCE pin of the P-channel MOSFET; the datasheet lists it as one of the three source pins (1, 2, 3) with a maximum rating of VDS = -30V. |
| 3 | S | passive | SOURCE pin of the P-channel MOSFET; the datasheet lists it as one of the three source pins (1, 2, 3) with a maximum rating of VDS = -30V. |
| 4 | G | input | GATE pin of the P-channel MOSFET; the absolute maximum gate-source voltage is VGS = ±25V. |
| 5 | D | passive | DRAIN pin of the P-channel MOSFET; the device is rated for continuous drain current ID = -14A at TA=25°C and -11A at TA=70°C. |
| 6 | D | passive | DRAIN pin of the P-channel MOSFET; the datasheet lists it as one of the four drain pins (5, 6, 7, 8) with continuous drain current ID = -14A at TA=25°C. |
| 7 | D | passive | DRAIN pin of the P-channel MOSFET; the datasheet lists it as one of the four drain pins (5, 6, 7, 8) with continuous drain current ID = -14A at TA=25°C. |
| 8 | D | passive | DRAIN pin of the P-channel MOSFET; the datasheet lists it as one of the four drain pins (5, 6, 7, 8) with continuous drain current ID = -14A at TA=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -25 | 25 | V | 1 | ||
| Continuous Drain Current | ID | -14 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | -11 | A | TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | -56 | A | 1 | |||
| Avalanche Current | IAS | -33 | A | 1 | |||
| Avalanche Energy | EAS | 54 | mJ | L=0.1mH | 1 | ||
| Power Dissipation | PD | 3.1 | W | TA=25°C | 1 | ||
| Power Dissipation | PD | 2 | W | TA=70°C | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RθJA | 31 | 40 | °C/W | t ≤ 10s | 2 | |
| Maximum Junction-to-Ambient | RθJA | 59 | 75 | °C/W | Steady-State | 2 | |
| Maximum Junction-to-Lead | RθJL | 16 | 24 | °C/W | Steady-State | 2 | |
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | ID=-250µA, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS=-30V, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current (TJ=55°C) | IDSS | -4 | µA | VDS=-30V, VGS=0V, TJ=55°C | 3 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±25V | 3 | |
| Gate Threshold Voltage | VGS(th) | -1.3 | -1.8 | -2.3 | V | VDS=VGS, ID=-250μA | 3 |
| Static Drain-Source On-Resistance | RDS(ON) | 9.5 | 11.5 | mΩ | VGS=-10V, ID=-14A | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | 14.7 | 18.5 | mΩ | VGS=-4.5V, ID=-10A | 3 | |
| Diode Forward Voltage | VSD | -0.7 | -1 | V | IS=-1A, VGS=0V | 3 | |
| Maximum Body-Diode Continuous Current | IS | -5 | A | 3 | |||
| Gate Resistance | Rg | 3.2 | 6.4 | Ω | f=1MHz | 3 | |
| Total Gate Charge | Qg(-10V) | 40 | 60 | nC | VGS=-10V, VDS=-15V, ID=-14A | 3 | |
| Total Gate Charge | Qg(-4.5V) | 20 | 30 | nC | 3 |
CAD (KiCad official)
- Symbol:
AO4407A - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
ao4407a-etched.step/ao4407a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao4407a.step/ao4407a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (10 pp, sha256
21451c29e692f530, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AO4407A
**UMW** · MOSFETs · SOP-8
AO4407A from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | SOURCE pin of the P-channel MOSFET; pins 1, 2 and 3 are all source and are tied together internally in the datasheet's pinning table, with the absolute maximum VDS of -30V applying across drain and source. |
| 2 | S | passive | SOURCE pin of the P-channel MOSFET; the datasheet lists it as one of the three source pins (1, 2, 3) with a maximum rating of VDS = -30V. |
| 3 | S | passive | SOURCE pin of the P-channel MOSFET; the datasheet lists it as one of the three source pins (1, 2, 3) with a maximum rating of VDS = -30V. |
| 4 | G | input | GATE pin of the P-channel MOSFET; the absolute maximum gate-source voltage is VGS = ±25V. |
| 5 | D | passive | DRAIN pin of the P-channel MOSFET; the device is rated for continuous drain current ID = -14A at TA=25°C and -11A at TA=70°C. |
| 6 | D | passive | DRAIN pin of the P-channel MOSFET; the datasheet lists it as one of the four drain pins (5, 6, 7, 8) with continuous drain current ID = -14A at TA=25°C. |
| 7 | D | passive | DRAIN pin of the P-channel MOSFET; the datasheet lists it as one of the four drain pins (5, 6, 7, 8) with continuous drain current ID = -14A at TA=25°C. |
| 8 | D | passive | DRAIN pin of the P-channel MOSFET; the datasheet lists it as one of the four drain pins (5, 6, 7, 8) with continuous drain current ID = -14A at TA=25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | | | V | | 1 |
| Gate-Source Voltage | VGS | -25 | | 25 | V | | 1 |
| Continuous Drain Current | ID | -14 | | | A | TA=25°C | 1 |
| Continuous Drain Current | ID | -11 | | | A | TA=70°C | 1 |
| Pulsed Drain Current | IDM | -56 | | | A | | 1 |
| Avalanche Current | IAS | -33 | | | A | | 1 |
| Avalanche Energy | EAS | | | 54 | mJ | L=0.1mH | 1 |
| Power Dissipation | PD | | | 3.1 | W | TA=25°C | 1 |
| Power Dissipation | PD | | | 2 | W | TA=70°C | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |
| Maximum Junction-to-Ambient | RθJA | | 31 | 40 | °C/W | t ≤ 10s | 2 |
| Maximum Junction-to-Ambient | RθJA | | 59 | 75 | °C/W | Steady-State | 2 |
| Maximum Junction-to-Lead | RθJL | | 16 | 24 | °C/W | Steady-State | 2 |
| Drain-Source Breakdown Voltage | BVDSS | -30 | | | V | ID=-250µA, VGS=0V | 3 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | µA | VDS=-30V, VGS=0V | 3 |
| Zero Gate Voltage Drain Current (TJ=55°C) | IDSS | | | -4 | µA | VDS=-30V, VGS=0V, TJ=55°C | 3 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±25V | 3 |
| Gate Threshold Voltage | VGS(th) | -1.3 | -1.8 | -2.3 | V | VDS=VGS, ID=-250μA | 3 |
| Static Drain-Source On-Resistance | RDS(ON) | | 9.5 | 11.5 | mΩ | VGS=-10V, ID=-14A | 3 |
| Static Drain-Source On-Resistance | RDS(ON) | | 14.7 | 18.5 | mΩ | VGS=-4.5V, ID=-10A | 3 |
| Diode Forward Voltage | VSD | | -0.7 | -1 | V | IS=-1A, VGS=0V | 3 |
| Maximum Body-Diode Continuous Current | IS | | | -5 | A | | 3 |
| Gate Resistance | Rg | | 3.2 | 6.4 | Ω | f=1MHz | 3 |
| Total Gate Charge | Qg(-10V) | | 40 | 60 | nC | VGS=-10V, VDS=-15V, ID=-14A | 3 |
| Total Gate Charge | Qg(-4.5V) | | 20 | 30 | nC | | 3 |
## CAD (KiCad official)
- Symbol: `AO4407A`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `ao4407a-etched.step` / `ao4407a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ao4407a.step` / `ao4407a.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8755874435650076672) (10 pp, sha256 `21451c29e692f530`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ao4407a-datasheet.pdf)