component

AO4407A

Public Made by Adom

by adom

UMW MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsao4407afactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 26d ago
viewers ao4407a: viewers · Ray 26d ago
ao4407a-etched.glb ao4407a: factory component page (tier=lcsc) · Ray 26d ago
ao4407a-etched.step ao4407a: factory component page (tier=lcsc) · Ray 26d ago
ao4407a-hero.glb ao4407a: hero GLB from the etched model (keeps the MPN mark) · Ray 26d ago
ao4407a-hero.overlay.json Publish 0.1.0 · Ray 26d ago
ao4407a.glb Publish 0.1.0 · Ray 26d ago
ao4407a.kicad_mod Publish 0.1.0 · Ray 26d ago
ao4407a.kicad_sym Publish 0.1.0 · Ray 26d ago
ao4407a.lbr Publish 0.1.0 · Ray 26d ago
ao4407a.step Publish 0.1.0 · Ray 26d ago
package.json Publish 0.1.0 · Ray 26d ago
page.json ao4407a: specified limits as data (metadata.characteristics, 25 rows from the datasheet) · Ray 20d ago
README.md ao4407a: specified limits as data (metadata.characteristics, 25 rows from the datasheet) · Ray 20d ago

AO4407A

UMW · MOSFETs · SOP-8

AO4407A from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive SOURCE pin of the P-channel MOSFET; pins 1, 2 and 3 are all source and are tied together internally in the datasheet's pinning table, with the absolute maximum VDS of -30V applying across drain and source.
2 S passive SOURCE pin of the P-channel MOSFET; the datasheet lists it as one of the three source pins (1, 2, 3) with a maximum rating of VDS = -30V.
3 S passive SOURCE pin of the P-channel MOSFET; the datasheet lists it as one of the three source pins (1, 2, 3) with a maximum rating of VDS = -30V.
4 G input GATE pin of the P-channel MOSFET; the absolute maximum gate-source voltage is VGS = ±25V.
5 D passive DRAIN pin of the P-channel MOSFET; the device is rated for continuous drain current ID = -14A at TA=25°C and -11A at TA=70°C.
6 D passive DRAIN pin of the P-channel MOSFET; the datasheet lists it as one of the four drain pins (5, 6, 7, 8) with continuous drain current ID = -14A at TA=25°C.
7 D passive DRAIN pin of the P-channel MOSFET; the datasheet lists it as one of the four drain pins (5, 6, 7, 8) with continuous drain current ID = -14A at TA=25°C.
8 D passive DRAIN pin of the P-channel MOSFET; the datasheet lists it as one of the four drain pins (5, 6, 7, 8) with continuous drain current ID = -14A at TA=25°C.

Key specifications

Parameter Value
Manufacturer UMW
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -25 25 V 1
Continuous Drain Current ID -14 A TA=25°C 1
Continuous Drain Current ID -11 A TA=70°C 1
Pulsed Drain Current IDM -56 A 1
Avalanche Current IAS -33 A 1
Avalanche Energy EAS 54 mJ L=0.1mH 1
Power Dissipation PD 3.1 W TA=25°C 1
Power Dissipation PD 2 W TA=70°C 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Maximum Junction-to-Ambient RθJA 31 40 °C/W t ≤ 10s 2
Maximum Junction-to-Ambient RθJA 59 75 °C/W Steady-State 2
Maximum Junction-to-Lead RθJL 16 24 °C/W Steady-State 2
Drain-Source Breakdown Voltage BVDSS -30 V ID=-250µA, VGS=0V 3
Zero Gate Voltage Drain Current IDSS -1 µA VDS=-30V, VGS=0V 3
Zero Gate Voltage Drain Current (TJ=55°C) IDSS -4 µA VDS=-30V, VGS=0V, TJ=55°C 3
Gate-Body Leakage Current IGSS -100 100 nA VDS=0V, VGS=±25V 3
Gate Threshold Voltage VGS(th) -1.3 -1.8 -2.3 V VDS=VGS, ID=-250μA 3
Static Drain-Source On-Resistance RDS(ON) 9.5 11.5 mΩ VGS=-10V, ID=-14A 3
Static Drain-Source On-Resistance RDS(ON) 14.7 18.5 mΩ VGS=-4.5V, ID=-10A 3
Diode Forward Voltage VSD -0.7 -1 V IS=-1A, VGS=0V 3
Maximum Body-Diode Continuous Current IS -5 A 3
Gate Resistance Rg 3.2 6.4 Ω f=1MHz 3
Total Gate Charge Qg(-10V) 40 60 nC VGS=-10V, VDS=-15V, ID=-14A 3
Total Gate Charge Qg(-4.5V) 20 30 nC 3

CAD (KiCad official)

  • Symbol: AO4407A
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: ao4407a-etched.step / ao4407a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao4407a.step / ao4407a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (10 pp, sha256 21451c29e692f530, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF