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AO4402

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Alpha Omega Semicon MOSFETs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AO4402

Alpha Omega Semicon · MOSFETs · SOIC-8

AO4402 from Alpha Omega Semicon, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the 20V N-channel MOSFET, one of three source pins (S) shown on the SOIC-8 top view.
2 S passive Source terminal of the 20V N-channel MOSFET, one of three source pins (S) shown on the SOIC-8 top view.
3 S passive Source terminal of the 20V N-channel MOSFET, one of three source pins (S) shown on the SOIC-8 top view.
4 G input Gate terminal; gate-source voltage is rated at ±12 V maximum, with VGS(th) 0.5 to 1.6 V.
5 D passive Drain terminal, one of four drain pins (D) on the SOIC-8; drain-source voltage is rated at 20 V maximum.
6 D passive Drain terminal, one of four drain pins (D) on the SOIC-8; drain-source voltage is rated at 20 V maximum.
7 D passive Drain terminal, one of four drain pins (D) on the SOIC-8; drain-source voltage is rated at 20 V maximum.
8 D passive Drain terminal, one of four drain pins (D) on the SOIC-8; drain-source voltage is rated at 20 V maximum.

Key specifications

Parameter Value
Manufacturer Alpha Omega Semicon
Package SOIC-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID 20 A TA=25°C 1
Continuous Drain Current ID 16 A TA=70°C 1
Pulsed Drain Current IDM 140 A 1
Power Dissipation PD 3.1 W TA=25°C 1
Power Dissipation PD 2 W TA=70°C 1
Avalanche Current IAS, IAR 57 A 1
Avalanche energy EAS, EAR 162 mJ L=0.1mH 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Drain-Source Breakdown Voltage BVDSS 20 V ID=250µA, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS=20V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 5 µA VDS=20V, VGS=0V; TJ=55°C 2
Gate-Body leakage current IGSS 100 nA VDS=0V, VGS=±12V 2
Gate Threshold Voltage VGS(th) 0.5 1 1.6 V VDS=VGS, ID=250µA 2
On state drain current ID(ON) 140 A VGS=10V, VDS=5V 2
Static Drain-Source On-Resistance RDS(ON) 4.6 5.5 mΩ VGS=4.5V, ID=20A 2
Static Drain-Source On-Resistance RDS(ON) 5.8 7 mΩ VGS=4.5V, ID=20A; TJ=125°C 2
Static Drain-Source On-Resistance RDS(ON) 5.5 7 mΩ VGS=2.5V, ID=18A 2
Forward Transconductance gFS 105 S VDS=5V, ID=20A 2
Diode Forward Voltage VSD 0.6 1 V IS=1A, VGS=0V 2
Maximum Body-Diode Continuous Current IS 4 A 2
Input Capacitance Ciss 3080 3860 4630 pF VGS=0V, VDS=10V, f=1MHz 2
Output Capacitance Coss 520 740 960 pF VGS=0V, VDS=10V, f=1MHz 2
Reverse Transfer Capacitance Crss 350 580 810 pF VGS=0V, VDS=10V, f=1MHz 2
Gate resistance Rg 0.6 1.4 2.1 Ω VGS=0V, VDS=0V, f=1MHz 2
Total Gate Charge Qg 28 36 43 nC (4.5V); VGS=10V, VDS=10V, ID=20A 2
Gate Source Charge Qgs 7 9 11 nC VGS=10V, VDS=10V, ID=20A 2
Gate Drain Charge Qgd 7 12 17 nC VGS=10V, VDS=10V, ID=20A 2
Turn-On DelayTime tD(on) 7 ns VGS=10V, VDS=10V, RL=0.5Ω, RGEN=3Ω 2
Turn-On Rise Time tr 8 ns VGS=10V, VDS=10V, RL=0.5Ω, RGEN=3Ω 2
Turn-Off DelayTime tD(off) 70 ns VGS=10V, VDS=10V, RL=0.5Ω, RGEN=3Ω 2
Turn-Off Fall Time tf 18 ns VGS=10V, VDS=10V, RL=0.5Ω, RGEN=3Ω 2
Body Diode Reverse Recovery Time trr 13 17 20 ns IF=20A, dI/dt=500A/µs 2
Body Diode Reverse Recovery Charge Qrr 29 36 43 nC IF=20A, dI/dt=500A/µs 2
Maximum Junction-to-Ambient, t≤10s RθJA 31 40 °C/W t≤10s 1
Maximum Junction-to-Ambient, Steady-State RθJA 59 75 °C/W Steady-State 1
Maximum Junction-to-Lead, Steady-State RθJL 16 24 °C/W Steady-State 1

CAD (KiCad official)

  • Symbol: AO4402
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: ao4402-etched.step / ao4402-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao4402.step / ao4402.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Alpha Omega Semicon datasheet (6 pp, sha256 550871e3ca3505c5, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF