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AO4402
Public Made by Adomby adom
Alpha Omega Semicon MOSFETs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAO4402
Alpha Omega Semicon · MOSFETs · SOIC-8
AO4402 from Alpha Omega Semicon, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the 20V N-channel MOSFET, one of three source pins (S) shown on the SOIC-8 top view. |
| 2 | S | passive | Source terminal of the 20V N-channel MOSFET, one of three source pins (S) shown on the SOIC-8 top view. |
| 3 | S | passive | Source terminal of the 20V N-channel MOSFET, one of three source pins (S) shown on the SOIC-8 top view. |
| 4 | G | input | Gate terminal; gate-source voltage is rated at ±12 V maximum, with VGS(th) 0.5 to 1.6 V. |
| 5 | D | passive | Drain terminal, one of four drain pins (D) on the SOIC-8; drain-source voltage is rated at 20 V maximum. |
| 6 | D | passive | Drain terminal, one of four drain pins (D) on the SOIC-8; drain-source voltage is rated at 20 V maximum. |
| 7 | D | passive | Drain terminal, one of four drain pins (D) on the SOIC-8; drain-source voltage is rated at 20 V maximum. |
| 8 | D | passive | Drain terminal, one of four drain pins (D) on the SOIC-8; drain-source voltage is rated at 20 V maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha Omega Semicon |
| Package | SOIC-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID | 20 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | 16 | A | TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | 140 | A | 1 | |||
| Power Dissipation | PD | 3.1 | W | TA=25°C | 1 | ||
| Power Dissipation | PD | 2 | W | TA=70°C | 1 | ||
| Avalanche Current | IAS, IAR | 57 | A | 1 | |||
| Avalanche energy | EAS, EAR | 162 | mJ | L=0.1mH | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | ID=250µA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=20V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 5 | µA | VDS=20V, VGS=0V; TJ=55°C | 2 | ||
| Gate-Body leakage current | IGSS | 100 | nA | VDS=0V, VGS=±12V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 0.5 | 1 | 1.6 | V | VDS=VGS, ID=250µA | 2 |
| On state drain current | ID(ON) | 140 | A | VGS=10V, VDS=5V | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 4.6 | 5.5 | mΩ | VGS=4.5V, ID=20A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 5.8 | 7 | mΩ | VGS=4.5V, ID=20A; TJ=125°C | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 5.5 | 7 | mΩ | VGS=2.5V, ID=18A | 2 | |
| Forward Transconductance | gFS | 105 | S | VDS=5V, ID=20A | 2 | ||
| Diode Forward Voltage | VSD | 0.6 | 1 | V | IS=1A, VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | 4 | A | 2 | |||
| Input Capacitance | Ciss | 3080 | 3860 | 4630 | pF | VGS=0V, VDS=10V, f=1MHz | 2 |
| Output Capacitance | Coss | 520 | 740 | 960 | pF | VGS=0V, VDS=10V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | 350 | 580 | 810 | pF | VGS=0V, VDS=10V, f=1MHz | 2 |
| Gate resistance | Rg | 0.6 | 1.4 | 2.1 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge | Qg | 28 | 36 | 43 | nC | (4.5V); VGS=10V, VDS=10V, ID=20A | 2 |
| Gate Source Charge | Qgs | 7 | 9 | 11 | nC | VGS=10V, VDS=10V, ID=20A | 2 |
| Gate Drain Charge | Qgd | 7 | 12 | 17 | nC | VGS=10V, VDS=10V, ID=20A | 2 |
| Turn-On DelayTime | tD(on) | 7 | ns | VGS=10V, VDS=10V, RL=0.5Ω, RGEN=3Ω | 2 | ||
| Turn-On Rise Time | tr | 8 | ns | VGS=10V, VDS=10V, RL=0.5Ω, RGEN=3Ω | 2 | ||
| Turn-Off DelayTime | tD(off) | 70 | ns | VGS=10V, VDS=10V, RL=0.5Ω, RGEN=3Ω | 2 | ||
| Turn-Off Fall Time | tf | 18 | ns | VGS=10V, VDS=10V, RL=0.5Ω, RGEN=3Ω | 2 | ||
| Body Diode Reverse Recovery Time | trr | 13 | 17 | 20 | ns | IF=20A, dI/dt=500A/µs | 2 |
| Body Diode Reverse Recovery Charge | Qrr | 29 | 36 | 43 | nC | IF=20A, dI/dt=500A/µs | 2 |
| Maximum Junction-to-Ambient, t≤10s | RθJA | 31 | 40 | °C/W | t≤10s | 1 | |
| Maximum Junction-to-Ambient, Steady-State | RθJA | 59 | 75 | °C/W | Steady-State | 1 | |
| Maximum Junction-to-Lead, Steady-State | RθJL | 16 | 24 | °C/W | Steady-State | 1 |
CAD (KiCad official)
- Symbol:
AO4402 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
ao4402-etched.step/ao4402-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao4402.step/ao4402.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Alpha Omega Semicon datasheet (6 pp, sha256
550871e3ca3505c5, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).