component
AO4401-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
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{
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"title": "AO4401-VB",
"brief": "VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
"version": "0.1.0",
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"package": "SO-8",
"pin_count": 8,
"category": "Triode/MOS Tube/Transistor",
"subcategory": "MOSFETs",
"datasheet": "https://datasheet.lcsc.com/datasheet/pdf/7a1efb99d967f46486e46a720a117fc5.pdf",
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"distributor_links": {
"lcsc": "C5137437"
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"distributor_check": {
"checked_at": "2026-11-02T17:25:55Z",
"source": "Component Ocean /api/assign-pns",
"digikey": {
"pn": null,
"status": "no match"
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"mouser": {
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},
"pins": [
{
"number": "1",
"name": "S",
"type": "passive",
"description": "Source of the P-channel MOSFET; Drain-Source voltage VDS is rated at -30 V maximum."
},
{
"number": "2",
"name": "S",
"type": "passive",
"description": "Source of the P-channel MOSFET, tied to the source terminal; continuous source current (diode conduction) is -2.3 A for 10 s and -1.1 A steady state."
},
{
"number": "3",
"name": "S",
"type": "passive",
"description": "Source of the P-channel MOSFET, tied to the source terminal; gate-source voltage VGS is limited to ±20 V relative to it."
},
{
"number": "4",
"name": "G",
"type": "input",
"description": "Gate of the P-channel MOSFET with gate threshold VGS(th) from -0.7 V to -2.0 V at ID = -250 µA and a maximum VGS of ±20 V."
},
{
"number": "5",
"name": "D",
"type": "passive",
"description": "Drain of the P-channel MOSFET, with continuous drain current of -5.8 A (10 s) and -4.1 A steady state at TA = 25 °C."
},
{
"number": "6",
"name": "D",
"type": "passive",
"description": "Drain of the P-channel MOSFET, tied to the drain terminal; pulsed drain current IDM is -30 A."
},
{
"number": "7",
"name": "D",
"type": "passive",
"description": "Drain of the P-channel MOSFET, tied to the drain terminal; RDS(on) is 0.033 Ω at VGS = -10 V and ID = -5.8 A."
},
{
"number": "8",
"name": "D",
"type": "passive",
"description": "Drain of the P-channel MOSFET, tied to the drain terminal; the junction-to-foot (drain) thermal resistance is 24 °C/W typical and 30 °C/W maximum."
}
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"cost_usd": 0.0409,
"at": "2026-11-02T17:25:44"
},
"datasheet": {
"url": "https://datasheet.lcsc.com/datasheet/pdf/7a1efb99d967f46486e46a720a117fc5.pdf",
"pages": 8,
"sha256": "305022af60f16f4d",
"source_tier": "lcsc"
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"cad": "KiCad official (CC-BY-SA 4.0)",
"pins": {
"total": 8,
"described": 8,
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"footprint": "viewers/footprint.html"
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"metadata": {
"specs": {
"Manufacturer": "VBsemi Elec",
"Package": "SO-8",
"Category": "Triode/MOS Tube/Transistor",
"Pins": "8"
}
},
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"discovery_pitch": "AO4401-VB (VBsemi Elec) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
"author": {
"name": "Ray",
"email": "[email protected]"
},
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