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Ray ao4354: specified limits as data (metadata.characteristics, 22 rows from the datasheet) ecfe7ad 20d ago

AO4354

Alpha Omega Semicon · MOSFETs · SOIC-8

AO4354 from Alpha Omega Semicon, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the 30V N-channel MOSFET; the datasheet lists VDS = 30 V and VGS = ±20 V as absolute maximum ratings for the device.
2 S passive Source terminal of the 30V N-channel MOSFET; the datasheet lists VDS = 30 V and VGS = ±20 V as absolute maximum ratings for the device.
3 S passive Source terminal of the 30V N-channel MOSFET; the datasheet lists VDS = 30 V and VGS = ±20 V as absolute maximum ratings for the device.
4 G input Gate terminal of the MOSFET; the gate-source voltage is rated at ±20 V.
5 D passive Drain terminal of the 30V N-channel MOSFET; the datasheet specifies ID = 23 A at VGS = 10 V.
6 D passive Drain terminal of the 30V N-channel MOSFET; the datasheet specifies ID = 23 A at VGS = 10 V.
7 D passive Drain terminal of the 30V N-channel MOSFET; the datasheet specifies ID = 23 A at VGS = 10 V.
8 D passive Drain terminal of the 30V N-channel MOSFET; the datasheet specifies ID = 23 A at VGS = 10 V.

Key specifications

Parameter Value
Manufacturer Alpha Omega Semicon
Package SOIC-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V ID=250µA, VGS=0V 2
Gate-Body leakage current IGSS 100 nA VDS=0V, VGS=±20V 2
Zero Gate Voltage Drain Current IDSS 5 µA VDS=30V, VGS=0V, TJ=55°C 2
Gate Threshold Voltage VGS(th) 1.2 1.8 2.2 V VDS=VGS, ID=250µA 2
Static Drain-Source On-Resistance RDS(ON) 3 3.7 mΩ VGS=10V, ID=20A 2
Static Drain-Source On-Resistance RDS(ON) 4.1 5.3 mΩ VGS=4.5V, ID=20A 2
Static Drain-Source On-Resistance RDS(ON) 4.1 5 mΩ TJ=125°C 2
Diode Forward Voltage VSD 0.7 1 V IS=1A, VGS=0V 2
Maximum Body-Diode Continuous Current IS 4 A 2
Gate resistance Rg 0.9 1.8 2.7 Ω VGS=0V, VDS=0V, f=1MHz 2
Total Gate Charge (10V) Qg (10V) 36 49 nC VGS=10V, VDS=15V, ID=20A 2
Total Gate Charge (4.5V) Qg (4.5V) 17 23 nC 2
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
VDS Spike VSPIKE 36 V 100ns 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Power Dissipation PD 3.1 W TA=25°C 1
Power Dissipation PD 1.2 W TA=100°C 1
Avalanche energy EAS 37 mJ L=0.1mH 1
Maximum Junction-to-Ambient (t ≤ 10s) RθJA 31 40 °C/W t ≤ 10s 1
Maximum Junction-to-Ambient (Steady-State) RθJA 59 75 °C/W Steady-State 1
Maximum Junction-to-Lead (Steady-State) RθJL 16 24 °C/W Steady-State 1

CAD (KiCad official)

  • Symbol: AO4354
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: ao4354-etched.step / ao4354-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao4354.step / ao4354.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Alpha Omega Semicon datasheet (5 pp, sha256 4abf5966b799da43, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF