component
AO4354
Public Made by Adomby adom
Alpha Omega Semicon MOSFETs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ao4354: specified limits as data (metadata.characteristics, 22 rows from the datasheet)
2 files changed
+301−1
README.md+29@@ -26,6 +26,35 @@ AO4354 from Alpha Omega Semicon, in a SOIC-8. Pinout and pin descriptions extrac | Category | Transistors/Thyristors | | Pins | 8 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | ID=250µA, VGS=0V | 2 |+| Gate-Body leakage current | IGSS | | | 100 | nA | VDS=0V, VGS=±20V | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 5 | µA | VDS=30V, VGS=0V, TJ=55°C | 2 |+| Gate Threshold Voltage | VGS(th) | 1.2 | 1.8 | 2.2 | V | VDS=VGS, ID=250µA | 2 |+| Static Drain-Source On-Resistance | RDS(ON) | | 3 | 3.7 | mΩ | VGS=10V, ID=20A | 2 |+| Static Drain-Source On-Resistance | RDS(ON) | | 4.1 | 5.3 | mΩ | VGS=4.5V, ID=20A | 2 |+| Static Drain-Source On-Resistance | RDS(ON) | | 4.1 | 5 | mΩ | TJ=125°C | 2 |+| Diode Forward Voltage | VSD | | 0.7 | 1 | V | IS=1A, VGS=0V | 2 |+| Maximum Body-Diode Continuous Current | IS | | | 4 | A | | 2 |+| Gate resistance | Rg | 0.9 | 1.8 | 2.7 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |+| Total Gate Charge (10V) | Qg (10V) | | 36 | 49 | nC | VGS=10V, VDS=15V, ID=20A | 2 |+| Total Gate Charge (4.5V) | Qg (4.5V) | | 17 | 23 | nC | | 2 |+| Drain-Source Voltage | VDS | | | 30 | V | | 1 |+| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |+| VDS Spike | VSPIKE | | | 36 | V | 100ns | 1 |+| Junction and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |+| Power Dissipation | PD | | | 3.1 | W | TA=25°C | 1 |+| Power Dissipation | PD | | | 1.2 | W | TA=100°C | 1 |+| Avalanche energy | EAS | | | 37 | mJ | L=0.1mH | 1 |+| Maximum Junction-to-Ambient (t ≤ 10s) | RθJA | | 31 | 40 | °C/W | t ≤ 10s | 1 |+| Maximum Junction-to-Ambient (Steady-State) | RθJA | | 59 | 75 | °C/W | Steady-State | 1 |+| Maximum Junction-to-Lead (Steady-State) | RθJL | | 16 | 24 | °C/W | Steady-State | 1 |+ ## CAD (KiCad official) - Symbol: `AO4354`
page.json+272−1@@ -179,6 +179,277 @@ "Package": "SOIC-8", "Category": "Transistors/Thyristors", "Pins": "8"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "4abf5966b799da43",+ "rows": [+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 30,+ "typ": null,+ "max": null,+ "conditions": "ID=250µA, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VDS=0V, VGS=±20V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "VDS=30V, VGS=0V, TJ=55°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1.2,+ "typ": 1.8,+ "max": 2.2,+ "conditions": "VDS=VGS, ID=250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 3,+ "max": 3.7,+ "conditions": "VGS=10V, ID=20A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 4.1,+ "max": 5.3,+ "conditions": "VGS=4.5V, ID=20A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 4.1,+ "max": 5,+ "conditions": "TJ=125°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.7,+ "max": 1,+ "conditions": "IS=1A, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Body-Diode Continuous Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 4,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate resistance",+ "symbol": "Rg",+ "kind": "electrical",+ "unit": "Ω",+ "min": 0.9,+ "typ": 1.8,+ "max": 2.7,+ "conditions": "VGS=0V, VDS=0V, f=1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge (10V)",+ "symbol": "Qg (10V)",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 36,+ "max": 49,+ "conditions": "VGS=10V, VDS=15V, ID=20A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge (4.5V)",+ "symbol": "Qg (4.5V)",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 17,+ "max": 23,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "VDS Spike",+ "symbol": "VSPIKE",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 36,+ "conditions": "100ns",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction and Storage Temperature Range",+ "symbol": "TJ, TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 3.1,+ "conditions": "TA=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1.2,+ "conditions": "TA=100°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 37,+ "conditions": "L=0.1mH",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Ambient (t ≤ 10s)",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 31,+ "max": 40,+ "conditions": "t ≤ 10s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Ambient (Steady-State)",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 59,+ "max": 75,+ "conditions": "Steady-State",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Lead (Steady-State)",+ "symbol": "RθJL",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 16,+ "max": 24,+ "conditions": "Steady-State",+ "source_page": 1,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -220,4 +491,4 @@ "visibility": { "public": true }-}+}