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AO3494-HXY

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HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AO3494-HXY

HXY MOSFET · MOSFETs · SOT-23

AO3494-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET; VGS rated ±12V maximum, threshold 0.5V min to 1.2V max at 250μA, with gate drive as low as 2.5V.
2 D passive Drain of the N-channel MOSFET; VDS rated 20V maximum with continuous drain current of 2.3A (16A pulsed).
3 S passive Source of the N-channel MOSFET; body diode forward current up to 3.3A with VSD 1.2V max at 2.3A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 20 22 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=20V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±12V,VDS=0V 2
Gate Threshold Voltage VGS(th) 0.5 0.75 1.2 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 54 72 mΩ VGS=2.5V, ID=2.0A 2
Drain-Source On-State Resistance RDS(ON) 48 60 mΩ VGS=4.5V, ID=2.3A 2
Total Gate Charge Qg 2.9 5 nC VDS=10V,ID=2.3A, VGS=4.5V 2
Diode Forward Voltage VSD 0.75 1.2 V VGS=0V,IS=2.3A 2
Diode Forward Current IS 3.3 A 2
Drain-Source Voltage VDS 20 V TA=25℃ 1
Gate-Source Voltage VGS -12 12 V TA=25℃ 1
Drain Current-Continuous ID 2.3 A TA=25℃ 1
Drain Current-Pulsed IDM 16 A TA=25℃, Note 1 1
Maximum Power Dissipation PD 0.9 W TA=25℃ 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ TA=25℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 139 ℃/W Note 2 1
Forward Transconductance gFS 8 S VDS=5V,ID=2.3A 2
Input Capacitance Ciss 260 PF VDS=10V,VGS=0V, F=1.0MHz 2
Output Capacitance Coss 48 PF VDS=10V,VGS=0V, F=1.0MHz 2
Reverse Transfer Capacitance Crss 27 PF VDS=10V,VGS=0V, F=1.0MHz 2
Turn-on Delay Time td(on) 2.5 nS VDD=10V, RL=3.3Ω, VGS=4.5V, RGEN=6Ω 2
Turn-on Rise Time tr 3.2 nS VDD=10V, RL=3.3Ω, VGS=4.5V, RGEN=6Ω 2
Turn-Off Delay Time td(off) 21 nS VDD=10V, RL=3.3Ω, VGS=4.5V, RGEN=6Ω 2
Turn-Off Fall Time tf 3 nS VDD=10V, RL=3.3Ω, VGS=4.5V, RGEN=6Ω 2
Gate-Source Charge Qgs 0.4 nC VDS=10V,ID=2.3A, VGS=4.5V 2
Gate-Drain Charge Qgd 0.6 nC VDS=10V,ID=2.3A, VGS=4.5V 2

CAD (KiCad official)

  • Symbol: AO3494-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: ao3494-hxy-etched.step / ao3494-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao3494-hxy.step / ao3494-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 cb8e8f881f21f700, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF