component
AO3494-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAO3494-HXY
HXY MOSFET · MOSFETs · SOT-23
AO3494-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; VGS rated ±12V maximum, threshold 0.5V min to 1.2V max at 250μA, with gate drive as low as 2.5V. |
| 2 | D | passive | Drain of the N-channel MOSFET; VDS rated 20V maximum with continuous drain current of 2.3A (16A pulsed). |
| 3 | S | passive | Source of the N-channel MOSFET; body diode forward current up to 3.3A with VSD 1.2V max at 2.3A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 20 | 22 | V | VGS=0V ID=250μA | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=20V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.75 | 1.2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 54 | 72 | mΩ | VGS=2.5V, ID=2.0A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 48 | 60 | mΩ | VGS=4.5V, ID=2.3A | 2 | |
| Total Gate Charge | Qg | 2.9 | 5 | nC | VDS=10V,ID=2.3A, VGS=4.5V | 2 | |
| Diode Forward Voltage | VSD | 0.75 | 1.2 | V | VGS=0V,IS=2.3A | 2 | |
| Diode Forward Current | IS | 3.3 | A | 2 | |||
| Drain-Source Voltage | VDS | 20 | V | TA=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -12 | 12 | V | TA=25℃ | 1 | |
| Drain Current-Continuous | ID | 2.3 | A | TA=25℃ | 1 | ||
| Drain Current-Pulsed | IDM | 16 | A | TA=25℃, Note 1 | 1 | ||
| Maximum Power Dissipation | PD | 0.9 | W | TA=25℃ | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | TA=25℃ | 1 | |
| Thermal Resistance, Junction-to-Ambient | RθJA | 139 | ℃/W | Note 2 | 1 | ||
| Forward Transconductance | gFS | 8 | S | VDS=5V,ID=2.3A | 2 | ||
| Input Capacitance | Ciss | 260 | PF | VDS=10V,VGS=0V, F=1.0MHz | 2 | ||
| Output Capacitance | Coss | 48 | PF | VDS=10V,VGS=0V, F=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 27 | PF | VDS=10V,VGS=0V, F=1.0MHz | 2 | ||
| Turn-on Delay Time | td(on) | 2.5 | nS | VDD=10V, RL=3.3Ω, VGS=4.5V, RGEN=6Ω | 2 | ||
| Turn-on Rise Time | tr | 3.2 | nS | VDD=10V, RL=3.3Ω, VGS=4.5V, RGEN=6Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 21 | nS | VDD=10V, RL=3.3Ω, VGS=4.5V, RGEN=6Ω | 2 | ||
| Turn-Off Fall Time | tf | 3 | nS | VDD=10V, RL=3.3Ω, VGS=4.5V, RGEN=6Ω | 2 | ||
| Gate-Source Charge | Qgs | 0.4 | nC | VDS=10V,ID=2.3A, VGS=4.5V | 2 | ||
| Gate-Drain Charge | Qgd | 0.6 | nC | VDS=10V,ID=2.3A, VGS=4.5V | 2 |
CAD (KiCad official)
- Symbol:
AO3494-HXY - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
ao3494-hxy-etched.step/ao3494-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao3494-hxy.step/ao3494-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
cb8e8f881f21f700, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).