# AO3481-HXY

**HXY MOSFET** · MOSFETs · SOT-23-3L

AO3481-HXY from HXY MOSFET, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; P-channel gate with VGS limited to ±12V absolute maximum, threshold VGS(th) -0.7V to -1.3V at ID=-250μA. |
| 2 | S | passive | Source; P-channel source terminal, continuous drain current -4.2A, with body diode forward voltage up to -1.2V at IS=-4.2A. |
| 3 | D | passive | Drain; P-channel drain with VDS rated -30V, continuous current -4.2A and pulsed current -30A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 |  |  | V | TA=25℃ unless otherwise noted | 1 |
| Gate-Source Voltage | VGS | -12 |  | 12 | V | TA=25℃ unless otherwise noted | 1 |
| Drain Current-Continuous | ID | -4.2 |  |  | A | TA=25℃ unless otherwise noted | 1 |
| Drain Current-Pulsed | IDM | -30 |  |  | A | Note 1 | 1 |
| Maximum Power Dissipation | PD |  |  | 1.2 | W | TA=25℃ unless otherwise noted | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  |  | 104 | ℃/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | μA | VDS=-24V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±10V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | -0.7 | -1 | -1.3 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 46 | 54 | mΩ | VGS=-10V, ID=-4.2A | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 58 | 77 | mΩ | VGS=-4.5V, ID=-4A | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 74 | 130 | mΩ | VGS=-2.5V, ID=-1A | 2 |
| Diode Forward Voltage | VSD |  |  | -1.2 | V | VGS=0V,IS=-4.2A | 2 |

## CAD (KiCad official)

- Symbol: `AO3481-HXY`
- Footprint: `Package_TO_SOT_SMD:SOT-23-3`
- 3D model: SOT-23-3L (KiCad packages3D, STEP)
- 3D model files: `ao3481-hxy-etched.step` / `ao3481-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ao3481-hxy.step` / `ao3481-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8758124224085143552) (7 pp, sha256 `f415b7a0e7d69cc2`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ao3481-hxy-datasheet.pdf)