component
AO3481-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 16d ago |
| viewers | 16d ago |
| ao3481-hxy-etched.glb | 16d ago |
| ao3481-hxy-etched.step | 16d ago |
| ao3481-hxy-hero.glb | 16d ago |
| ao3481-hxy-hero.overlay.json | 16d ago |
| ao3481-hxy.glb | 16d ago |
| ao3481-hxy.kicad_mod | 16d ago |
| ao3481-hxy.kicad_sym | 16d ago |
| ao3481-hxy.lbr | 16d ago |
| ao3481-hxy.step | 16d ago |
| package.json | 16d ago |
| page.json | 16d ago |
| README.md | 16d ago |
AO3481-HXY
HXY MOSFET · MOSFETs · SOT-23-3L
AO3481-HXY from HXY MOSFET, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; P-channel gate with VGS limited to ±12V absolute maximum, threshold VGS(th) -0.7V to -1.3V at ID=-250μA. |
| 2 | S | passive | Source; P-channel source terminal, continuous drain current -4.2A, with body diode forward voltage up to -1.2V at IS=-4.2A. |
| 3 | D | passive | Drain; P-channel drain with VDS rated -30V, continuous current -4.2A and pulsed current -30A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | TA=25℃ unless otherwise noted | 1 | ||
| Gate-Source Voltage | VGS | -12 | 12 | V | TA=25℃ unless otherwise noted | 1 | |
| Drain Current-Continuous | ID | -4.2 | A | TA=25℃ unless otherwise noted | 1 | ||
| Drain Current-Pulsed | IDM | -30 | A | Note 1 | 1 | ||
| Maximum Power Dissipation | PD | 1.2 | W | TA=25℃ unless otherwise noted | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 104 | ℃/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-24V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±10V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -0.7 | -1 | -1.3 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 46 | 54 | mΩ | VGS=-10V, ID=-4.2A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 58 | 77 | mΩ | VGS=-4.5V, ID=-4A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 74 | 130 | mΩ | VGS=-2.5V, ID=-1A | 2 | |
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V,IS=-4.2A | 2 |
CAD (KiCad official)
- Symbol:
AO3481-HXY - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3L (KiCad packages3D, STEP)
- 3D model files:
ao3481-hxy-etched.step/ao3481-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao3481-hxy.step/ao3481-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (7 pp, sha256
f415b7a0e7d69cc2, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).