component
AO3418-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with kicad-footprint-generator 10.0 · KiCad file format 20260206
AO3418-VB
VBsemi Elec · MOSFETs · SOT-23(TO-236)
AO3418-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol and footprint from KiCad-official CAD; the 3D model is generated from the datasheet's package dimensions.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; gate-source voltage is rated VGS ±20 V in the absolute maximum ratings. |
| 2 | S | passive | Source of the N-channel MOSFET; the continuous source-drain diode current is rated 1.4 A at TC = 25 °C. |
| 3 | D | passive | Drain of the N-channel MOSFET; drain-source voltage is rated 30 V, and the continuous drain current is 6.5 A at TC = 25 °C with package-limited operation noted. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23(TO-236) |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | TA = 25 °C, unless otherwise noted | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | Printed ±20 V | 1 | |
| Continuous Drain Current | ID | 6.5 | A | TC = 25 °C (TJ = 150 °C) | 1 | ||
| Continuous Drain Current | ID | 6 | A | TC = 70 °C (TJ = 150 °C) | 1 | ||
| Continuous Drain Current | ID | 5.3 | A | TA = 25 °C (TJ = 150 °C) | 1 | ||
| Continuous Drain Current | ID | 5 | A | TA = 70 °C (TJ = 150 °C) | 1 | ||
| Pulsed Drain Current | IDM | 25 | A | 1 | |||
| Continuous Source-Drain Diode Current | IS | 1.4 | A | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 1.7 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 1.1 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation | PD | 0.7 | W | TA = 70 °C (surface mounted, note b,c) | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Soldering Recommendations (Peak Temperature) | 260 | °C | Peak temperature (notes d, e) | 1 | |||
| Maximum Junction-to-Ambient | RthJA | 90 | 115 | °C/W | t ≤ 5 s | 1 | |
| Maximum Junction-to-Foot (Drain) | RthJF | 60 | 75 | °C/W | Steady state | 1 | |
| Maximum Junction-to-Ambient | RthJA | 130 | °C/W | Steady state (from note d text) | 1 | ||
| Drain-Source Breakdown Voltage | VDS | 30 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 0.7 | 2 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 30 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | µA | VDS = 30 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | 10 | A | VDS ≥ 5 V, VGS = 10 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.03 | Ω | VGS = 10 V, ID = 3.2 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.033 | Ω | VGS = 4.5 V, ID = 2.8 A | 2 | ||
| Gate Resistance | Rg | 0.8 | 4.4 | 8.8 | Ω | f = 1 MHz | 2 |
| Total Gate Charge | Qg | 4.5 | 6.7 | nC | VDS = 15 V, VGS = 10 V, ID = 3.4 A | 2 | |
| Total Gate Charge | Qg | 2.1 | 3.2 | nC | VDS = 15 V, VGS = 4.5 V, ID = 3.4 A | 2 | |
| Turn-On Delay Time | td(on) | 12 | 20 | ns | VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 50 | 75 | ns | VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 12 | 20 | ns | VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 22 | 35 | ns | VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Turn-On Delay Time | td(on) | 5 | 10 | ns | VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 12 | 20 | ns | VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 10 | 15 | ns | VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 5 | 10 | ns | VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Continuous Source-Drain Diode Current | IS | 1.4 | A | TC = 25 °C | 2 | ||
| Pulse Diode Forward Current | ISM | 15 | A | 2 | |||
| Body Diode Voltage | VSD | 0.8 | 1.2 | V | IS = 2.7 A, VGS = 0 V | 2 | |
| Body Diode Reverse Recovery Time | trr | 10 | 20 | ns | IF = 2.7 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 5 | 10 | nC | IF = 2.7 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Drain-Source Breakdown Voltage Temperature Coefficient | ΔVDS/TJ | 31 | mV/°C | ID = 250 µA | 2 | ||
| Gate-Source Threshold Voltage Temperature Coefficient | ΔVGS(th)/TJ | -5 | mV/°C | 2 | |||
| Forward Transconductance | gfs | 11 | S | VDS = 15 V, ID = 4.8 A | 2 | ||
| Input Capacitance | Ciss | 335 | pF | VDS = 15 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Output Capacitance | Coss | 45 | pF | VDS = 15 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 17 | pF | VDS = 15 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Gate-Source Charge | Qgs | 0.85 | nC | VDS = 15 V, VGS = 4.5 V, ID = 3.4 A | 2 | ||
| Gate-Drain Charge | Qgd | 0.65 | nC | VDS = 15 V, VGS = 4.5 V, ID = 3.4 A | 2 | ||
| Reverse Recovery Fall Time | ta | 6 | ns | IF = 2.7 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | ||
| Reverse Recovery Rise Time | tb | 4 | ns | IF = 2.7 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
CAD (land: KiCad; 3D: generated from the datasheet)
- Symbol:
AO3418-VB - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23(TO-236), generated on the KiCad land (body 1.3 x 2.92 mm, terminals on the pads, 1.0050000000000001 mm tall, datasheet A, midpoint of min and max). KiCad's stock model for this land is taller than the datasheet allows, so the model is generated from the datasheet drawing; the dimensions come from the datasheet drawing where it was read and are defaults otherwise (see provenance.model_3d_generated), not the manufacturer's CAD (STEP)
- 3D model files:
ao3418-vb-etched.step/ao3418-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao3418-vb.step/ao3418-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
8ba244166e306f69, retrieved 2026-11-13, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: land: KiCad official libraries (CC-BY-SA 4.0); 3D: generated from the datasheet's package dimensions (provenance.model_3d_generated).