AO3418-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol and footprint from KiCad-official CAD; the 3D model is generated from the datasheet's package dimensions.

Pinout

Pin	Name	Type	Function
1	G	input	Gate of the N-channel MOSFET; gate-source voltage is rated VGS ±20 V in the absolute maximum ratings.
2	S	passive	Source of the N-channel MOSFET; the continuous source-drain diode current is rated 1.4 A at TC = 25 °C.
3	D	passive	Drain of the N-channel MOSFET; drain-source voltage is rated 30 V, and the continuous drain current is 6.5 A at TC = 25 °C with package-limited operation noted.

Key specifications

Parameter	Value
Manufacturer	VBsemi Elec
Package	SOT-23(TO-236)
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Voltage	VDS			30	V	TA = 25 °C, unless otherwise noted	1
Gate-Source Voltage	VGS	-20		20	V	Printed ±20 V	1
Continuous Drain Current	ID			6.5	A	TC = 25 °C (TJ = 150 °C)	1
Continuous Drain Current	ID			6	A	TC = 70 °C (TJ = 150 °C)	1
Continuous Drain Current	ID			5.3	A	TA = 25 °C (TJ = 150 °C)	1
Continuous Drain Current	ID			5	A	TA = 70 °C (TJ = 150 °C)	1
Pulsed Drain Current	IDM			25	A		1
Continuous Source-Drain Diode Current	IS			1.4	A	TC = 25 °C	1
Maximum Power Dissipation	PD			1.7	W	TC = 25 °C	1
Maximum Power Dissipation	PD			1.1	W	TC = 70 °C	1
Maximum Power Dissipation	PD			0.7	W	TA = 70 °C (surface mounted, note b,c)	1
Operating Junction and Storage Temperature Range	TJ, Tstg	-55		150	°C		1
Soldering Recommendations (Peak Temperature)				260	°C	Peak temperature (notes d, e)	1
Maximum Junction-to-Ambient	RthJA		90	115	°C/W	t ≤ 5 s	1
Maximum Junction-to-Foot (Drain)	RthJF		60	75	°C/W	Steady state	1
Maximum Junction-to-Ambient	RthJA			130	°C/W	Steady state (from note d text)	1
Drain-Source Breakdown Voltage	VDS	30			V	VGS = 0 V, ID = 250 µA	2
Gate-Source Threshold Voltage	VGS(th)	0.7		2	V	VDS = VGS, ID = 250 µA	2
Gate-Source Leakage	IGSS	-100		100	nA	VDS = 0 V, VGS = ±20 V	2
Zero Gate Voltage Drain Current	IDSS			1	µA	VDS = 30 V, VGS = 0 V	2
Zero Gate Voltage Drain Current	IDSS			10	µA	VDS = 30 V, VGS = 0 V, TJ = 55 °C	2
On-State Drain Current	ID(on)	10			A	VDS ≥ 5 V, VGS = 10 V	2
Drain-Source On-State Resistance	RDS(on)			0.03	Ω	VGS = 10 V, ID = 3.2 A	2
Drain-Source On-State Resistance	RDS(on)			0.033	Ω	VGS = 4.5 V, ID = 2.8 A	2
Gate Resistance	Rg	0.8	4.4	8.8	Ω	f = 1 MHz	2
Total Gate Charge	Qg		4.5	6.7	nC	VDS = 15 V, VGS = 10 V, ID = 3.4 A	2
Total Gate Charge	Qg		2.1	3.2	nC	VDS = 15 V, VGS = 4.5 V, ID = 3.4 A	2
Turn-On Delay Time	td(on)		12	20	ns	VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 4.5 V, Rg = 1 Ω	2
Rise Time	tr		50	75	ns	VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 4.5 V, Rg = 1 Ω	2
Turn-Off Delay Time	td(off)		12	20	ns	VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 4.5 V, Rg = 1 Ω	2
Fall Time	tf		22	35	ns	VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 4.5 V, Rg = 1 Ω	2
Turn-On Delay Time	td(on)		5	10	ns	VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 10 V, Rg = 1 Ω	2
Rise Time	tr		12	20	ns	VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 10 V, Rg = 1 Ω	2
Turn-Off Delay Time	td(off)		10	15	ns	VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 10 V, Rg = 1 Ω	2
Fall Time	tf		5	10	ns	VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 10 V, Rg = 1 Ω	2
Continuous Source-Drain Diode Current	IS			1.4	A	TC = 25 °C	2
Pulse Diode Forward Current	ISM			15	A		2
Body Diode Voltage	VSD		0.8	1.2	V	IS = 2.7 A, VGS = 0 V	2
Body Diode Reverse Recovery Time	trr		10	20	ns	IF = 2.7 A, dI/dt = 100 A/µs, TJ = 25 °C	2
Body Diode Reverse Recovery Charge	Qrr		5	10	nC	IF = 2.7 A, dI/dt = 100 A/µs, TJ = 25 °C	2
Drain-Source Breakdown Voltage Temperature Coefficient	ΔVDS/TJ		31		mV/°C	ID = 250 µA	2
Gate-Source Threshold Voltage Temperature Coefficient	ΔVGS(th)/TJ		-5		mV/°C		2
Forward Transconductance	gfs		11		S	VDS = 15 V, ID = 4.8 A	2
Input Capacitance	Ciss		335		pF	VDS = 15 V, VGS = 0 V, f = 1 MHz	2
Output Capacitance	Coss		45		pF	VDS = 15 V, VGS = 0 V, f = 1 MHz	2
Reverse Transfer Capacitance	Crss		17		pF	VDS = 15 V, VGS = 0 V, f = 1 MHz	2
Gate-Source Charge	Qgs		0.85		nC	VDS = 15 V, VGS = 4.5 V, ID = 3.4 A	2
Gate-Drain Charge	Qgd		0.65		nC	VDS = 15 V, VGS = 4.5 V, ID = 3.4 A	2
Reverse Recovery Fall Time	ta		6		ns	IF = 2.7 A, dI/dt = 100 A/µs, TJ = 25 °C	2
Reverse Recovery Rise Time	tb		4		ns	IF = 2.7 A, dI/dt = 100 A/µs, TJ = 25 °C	2

CAD (land: KiCad; 3D: generated from the datasheet)

Symbol: AO3418-VB
Footprint: Package_TO_SOT_SMD:SOT-23
3D model: SOT-23(TO-236), generated on the KiCad land (body 1.3 x 2.92 mm, terminals on the pads, 1.0050000000000001 mm tall, datasheet A, midpoint of min and max). KiCad's stock model for this land is taller than the datasheet allows, so the model is generated from the datasheet drawing; the dimensions come from the datasheet drawing where it was read and are defaults otherwise (see provenance.model_3d_generated), not the manufacturer's CAD (STEP)
3D model files: ao3418-vb-etched.step / ao3418-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao3418-vb.step / ao3418-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: VBsemi Elec datasheet (9 pp, sha256 8ba244166e306f69, retrieved 2026-11-13, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: land: KiCad official libraries (CC-BY-SA 4.0); 3D: generated from the datasheet's package dimensions (provenance.model_3d_generated).

Datasheet PDF

AO3418-VB

Verified AO3418-VB

Verification log 1 record

3D Model

Symbol & Footprint

Schematic Symbol

PCB Footprint

Datasheet

README