# AO3416

**Alpha Omega Semicon** · MOSFETs · SOT-23

AO3416 from Alpha Omega Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate, ESD-protected with a ±8V maximum gate-source voltage and fully enhanced for RDS(ON) below 22mΩ at VGS=4.5V, usable down to 1.8V. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, with body diode to drain and continuous body-diode current up to 2A. |
| 3 | D | passive | Drain terminal, rated for 20V drain-source voltage and 6.5A continuous current at TA=25°C (30A pulsed). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Alpha Omega Semicon |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 20 | V | TA=25°C unless otherwise noted | 1 |
| Gate-Source Voltage | VGS | -8 |  | 8 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 6.5 | A | TA=25°C | 1 |
| Continuous Drain Current | ID |  |  | 5.2 | A | TA=70°C | 1 |
| Pulsed Drain Current | IDM |  |  | 30 | A |  | 1 |
| Power Dissipation | PD |  |  | 1.4 | W | TA=25°C | 1 |
| Power Dissipation | PD |  |  | 0.9 | W | TA=70°C | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 1 |
| Maximum Junction-to-Ambient thermal resistance | RθJA |  | 70 | 100 | °C/W | t ≤ 10s | 1 |
| Maximum Junction-to-Ambient thermal resistance | RθJA |  | 90 | 125 | °C/W | Steady-State | 1 |
| Maximum Junction-to-Lead thermal resistance | RθJL |  | 63 | 80 | °C/W | Steady-State | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 20 |  |  | V | ID=250µA, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS=20V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current (TJ=55°C) | IDSS |  |  | 5 | µA | VDS=20V, VGS=0V, TJ=55°C | 2 |
| Gate-Body leakage current | IGSS | -10 |  | 10 | µA | VDS=0V, VGS=±8V | 2 |
| Gate Threshold Voltage | VGS(th) | 0.4 | 0.7 | 1.1 | V | VDS=VGS, ID=250µA | 2 |
| On state drain current | ID(ON) | 30 |  |  | A | VGS=4.5V, VDS=5V | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 16 | 22 | mΩ | VGS=4.5V, ID=6.5A | 2 |
| Static Drain-Source On-Resistance (TJ=125°C) | RDS(ON) |  | 22 | 30 | mΩ | TJ=125°C; VGS=4.5V, ID=6.5A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 18 | 26 | mΩ | VGS=2.5V, ID=5.5A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 21 | 34 | mΩ | VGS=1.8V, ID=5A | 2 |
| Forward Transconductance | gFS |  | 50 |  | S | VDS=5V, ID=6.5A | 2 |
| Diode Forward Voltage | VSD |  | 0.62 | 1 | V | IS=1A, VGS=0V | 2 |
| Maximum Body-Diode Continuous Current | IS |  |  | 2 | A |  | 2 |
| Input Capacitance | Ciss |  | 1295 | 1650 | pF | VGS=0V, VDS=10V, f=1MHz | 2 |
| Output Capacitance | Coss |  | 160 |  | pF | VGS=0V, VDS=10V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 87 |  | pF | VGS=0V, VDS=10V, f=1MHz | 2 |
| Gate resistance | Rg |  | 1.8 |  | KΩ | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge | Qg |  | 10 |  | nC | VGS=4.5V, VDS=10V, ID=6.5A | 2 |
| Gate Source Charge | Qgs |  | 4.2 |  | nC | VGS=4.5V, VDS=10V, ID=6.5A | 2 |
| Gate Drain Charge | Qgd |  | 2.6 |  | nC | VGS=4.5V, VDS=10V, ID=6.5A | 2 |
| Turn-On DelayTime | tD(on) |  | 280 |  | ns | VGS=4.5V, VDS=10V, RL=1.54Ω, RGEN=3Ω | 2 |
| Turn-On Rise Time | tr |  | 328 |  | ns | VGS=4.5V, VDS=10V, RL=1.54Ω, RGEN=3Ω | 2 |
| Turn-Off DelayTime | tD(off) |  | 3.76 |  | us | VGS=4.5V, VDS=10V, RL=1.54Ω, RGEN=3Ω | 2 |
| Turn-Off Fall Time | tf |  | 2.24 |  | us | VGS=4.5V, VDS=10V, RL=1.54Ω, RGEN=3Ω | 2 |
| Body Diode Reverse Recovery Time | trr |  | 31 | 41 | ns | IF=6.5A, dI/dt=100A/µs | 2 |
| Body Diode Reverse Recovery Charge | Qrr |  | 6.8 |  | nC | IF=6.5A, dI/dt=100A/µs | 2 |

## CAD (KiCad official)

- Symbol: `AO3416`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `ao3416-etched.step` / `ao3416-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ao3416.step` / `ao3416.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Alpha Omega Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586176348385103872) (5 pp, sha256 `c8626ad2b6989041`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ao3416-datasheet.pdf)