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AO3416
Public Made by Adomby adom
Alpha Omega Semicon MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAO3416
Alpha Omega Semicon · MOSFETs · SOT-23
AO3416 from Alpha Omega Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate, ESD-protected with a ±8V maximum gate-source voltage and fully enhanced for RDS(ON) below 22mΩ at VGS=4.5V, usable down to 1.8V. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, with body diode to drain and continuous body-diode current up to 2A. |
| 3 | D | passive | Drain terminal, rated for 20V drain-source voltage and 6.5A continuous current at TA=25°C (30A pulsed). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha Omega Semicon |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | TA=25°C unless otherwise noted | 1 | ||
| Gate-Source Voltage | VGS | -8 | 8 | V | 1 | ||
| Continuous Drain Current | ID | 6.5 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | 5.2 | A | TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | 30 | A | 1 | |||
| Power Dissipation | PD | 1.4 | W | TA=25°C | 1 | ||
| Power Dissipation | PD | 0.9 | W | TA=70°C | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient thermal resistance | RθJA | 70 | 100 | °C/W | t ≤ 10s | 1 | |
| Maximum Junction-to-Ambient thermal resistance | RθJA | 90 | 125 | °C/W | Steady-State | 1 | |
| Maximum Junction-to-Lead thermal resistance | RθJL | 63 | 80 | °C/W | Steady-State | 1 | |
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | ID=250µA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=20V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current (TJ=55°C) | IDSS | 5 | µA | VDS=20V, VGS=0V, TJ=55°C | 2 | ||
| Gate-Body leakage current | IGSS | -10 | 10 | µA | VDS=0V, VGS=±8V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.4 | 0.7 | 1.1 | V | VDS=VGS, ID=250µA | 2 |
| On state drain current | ID(ON) | 30 | A | VGS=4.5V, VDS=5V | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 16 | 22 | mΩ | VGS=4.5V, ID=6.5A | 2 | |
| Static Drain-Source On-Resistance (TJ=125°C) | RDS(ON) | 22 | 30 | mΩ | TJ=125°C; VGS=4.5V, ID=6.5A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 18 | 26 | mΩ | VGS=2.5V, ID=5.5A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 21 | 34 | mΩ | VGS=1.8V, ID=5A | 2 | |
| Forward Transconductance | gFS | 50 | S | VDS=5V, ID=6.5A | 2 | ||
| Diode Forward Voltage | VSD | 0.62 | 1 | V | IS=1A, VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | 2 | A | 2 | |||
| Input Capacitance | Ciss | 1295 | 1650 | pF | VGS=0V, VDS=10V, f=1MHz | 2 | |
| Output Capacitance | Coss | 160 | pF | VGS=0V, VDS=10V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 87 | pF | VGS=0V, VDS=10V, f=1MHz | 2 | ||
| Gate resistance | Rg | 1.8 | KΩ | VGS=0V, VDS=0V, f=1MHz | 2 | ||
| Total Gate Charge | Qg | 10 | nC | VGS=4.5V, VDS=10V, ID=6.5A | 2 | ||
| Gate Source Charge | Qgs | 4.2 | nC | VGS=4.5V, VDS=10V, ID=6.5A | 2 | ||
| Gate Drain Charge | Qgd | 2.6 | nC | VGS=4.5V, VDS=10V, ID=6.5A | 2 | ||
| Turn-On DelayTime | tD(on) | 280 | ns | VGS=4.5V, VDS=10V, RL=1.54Ω, RGEN=3Ω | 2 | ||
| Turn-On Rise Time | tr | 328 | ns | VGS=4.5V, VDS=10V, RL=1.54Ω, RGEN=3Ω | 2 | ||
| Turn-Off DelayTime | tD(off) | 3.76 | us | VGS=4.5V, VDS=10V, RL=1.54Ω, RGEN=3Ω | 2 | ||
| Turn-Off Fall Time | tf | 2.24 | us | VGS=4.5V, VDS=10V, RL=1.54Ω, RGEN=3Ω | 2 | ||
| Body Diode Reverse Recovery Time | trr | 31 | 41 | ns | IF=6.5A, dI/dt=100A/µs | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 6.8 | nC | IF=6.5A, dI/dt=100A/µs | 2 |
CAD (KiCad official)
- Symbol:
AO3416 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
ao3416-etched.step/ao3416-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao3416.step/ao3416.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Alpha Omega Semicon datasheet (5 pp, sha256
c8626ad2b6989041, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).