component
AO3400C
Public Made by Adomby adom
Alpha Omega Semicon MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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AO3400C
Alpha Omega Semicon · MOSFETs · SOT-23
AO3400C from Alpha Omega Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate, ESD-protected, with a maximum gate-source voltage of ±20V and a gate threshold of 1.3V min to 2.3V max. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, which is the body-diode anode side. |
| 3 | D | passive | Drain, rated for a maximum drain-source voltage of 30V and 6.2A continuous at TA=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha Omega Semicon |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 6.2 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | 4.8 | A | TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | 40 | A | 1 | |||
| Power Dissipation | PD | 1.3 | W | 1 | |||
| Power Dissipation | PD | 0.8 | W | TA=70°C | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RqJA | 63 | °C/W | t ≤ 10s | 1 | ||
| Maximum Junction-to-Ambient | RqJA | 125 | °C/W | Steady-State | 1 | ||
| Maximum Junction-to-Lead | RqJL | 80 | °C/W | Steady-State | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | ID=250μA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 5 | μA | VDS=30V, VGS=0V, TJ=55°C | 2 | ||
| Gate-Body Leakage Current | IGSS | -10 | 10 | μA | VDS=0V, VGS=±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.3 | 1.8 | 2.3 | V | VDS=VGS, ID=250mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 16 | 20 | mΩ | VGS=10V, ID=6.2A | 2 | |
| Static Drain-Source On-Resistance (TJ=125°C) | RDS(ON) | 24 | 30 | mΩ | TJ=125°C | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 20 | 26 | mΩ | VGS=4.5V, ID=5.5A | 2 | |
| Diode Forward Voltage | VSD | 0.7 | 1 | V | IS=1A, VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | 2 | A | 2 | |||
| Gate Resistance | Rg | 1.2 | 2.4 | 3.6 | Ω | f=1MHz | 2 |
| Total Gate Charge (10V) | Qg | 12 | 20 | nC | VGS=10V, VDS=15V, ID=6.2A | 2 | |
| Total Gate Charge (4.5V) | Qg | 6 | 12 | nC | 2 | ||
| Forward Transconductance | gFS | 33 | S | VDS=5V, ID=6.2A | 2 | ||
| Input Capacitance | Ciss | 600 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 70 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 60 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | ||
| Gate Source Charge | Qgs | 2.2 | nC | 2 | |||
| Gate Drain Charge | Qgd | 2.5 | nC | 2 | |||
| Turn-On Delay Time | tD(on) | 4.5 | ns | VGS=10V, VDS=15V, RL=2.42W, RGEN=3W | 2 | ||
| Turn-On Rise Time | tr | 4 | ns | VGS=10V, VDS=15V, RL=2.42W, RGEN=3W | 2 | ||
| Turn-Off Delay Time | tD(off) | 20 | ns | VGS=10V, VDS=15V, RL=2.42W, RGEN=3W | 2 | ||
| Turn-Off Fall Time | tf | 4 | ns | VGS=10V, VDS=15V, RL=2.42W, RGEN=3W | 2 | ||
| Body Diode Reverse Recovery Time | trr | 5 | ns | IF=6.2A, di/dt=500A/ms | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 6 | nC | IF=6.2A, di/dt=500A/ms | 2 |
CAD (KiCad official)
- Symbol:
AO3400C - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
ao3400c-etched.step/ao3400c-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao3400c.step/ao3400c.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Alpha Omega Semicon datasheet (5 pp, sha256
1492cf469fcb1d83, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AO3400C
**Alpha Omega Semicon** · MOSFETs · SOT-23
AO3400C from Alpha Omega Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate, ESD-protected, with a maximum gate-source voltage of ±20V and a gate threshold of 1.3V min to 2.3V max. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, which is the body-diode anode side. |
| 3 | D | passive | Drain, rated for a maximum drain-source voltage of 30V and 6.2A continuous at TA=25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha Omega Semicon |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 30 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | 6.2 | A | TA=25°C | 1 |
| Continuous Drain Current | ID | | | 4.8 | A | TA=70°C | 1 |
| Pulsed Drain Current | IDM | | | 40 | A | | 1 |
| Power Dissipation | PD | | | 1.3 | W | | 1 |
| Power Dissipation | PD | | | 0.8 | W | TA=70°C | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |
| Maximum Junction-to-Ambient | RqJA | | | 63 | °C/W | t ≤ 10s | 1 |
| Maximum Junction-to-Ambient | RqJA | | | 125 | °C/W | Steady-State | 1 |
| Maximum Junction-to-Lead | RqJL | | | 80 | °C/W | Steady-State | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | ID=250μA, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=30V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 5 | μA | VDS=30V, VGS=0V, TJ=55°C | 2 |
| Gate-Body Leakage Current | IGSS | -10 | | 10 | μA | VDS=0V, VGS=±20V | 2 |
| Gate Threshold Voltage | VGS(th) | 1.3 | 1.8 | 2.3 | V | VDS=VGS, ID=250mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 16 | 20 | mΩ | VGS=10V, ID=6.2A | 2 |
| Static Drain-Source On-Resistance (TJ=125°C) | RDS(ON) | | 24 | 30 | mΩ | TJ=125°C | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 20 | 26 | mΩ | VGS=4.5V, ID=5.5A | 2 |
| Diode Forward Voltage | VSD | | 0.7 | 1 | V | IS=1A, VGS=0V | 2 |
| Maximum Body-Diode Continuous Current | IS | | | 2 | A | | 2 |
| Gate Resistance | Rg | 1.2 | 2.4 | 3.6 | Ω | f=1MHz | 2 |
| Total Gate Charge (10V) | Qg | | 12 | 20 | nC | VGS=10V, VDS=15V, ID=6.2A | 2 |
| Total Gate Charge (4.5V) | Qg | | 6 | 12 | nC | | 2 |
| Forward Transconductance | gFS | | 33 | | S | VDS=5V, ID=6.2A | 2 |
| Input Capacitance | Ciss | | 600 | | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Output Capacitance | Coss | | 70 | | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 60 | | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Gate Source Charge | Qgs | | 2.2 | | nC | | 2 |
| Gate Drain Charge | Qgd | | 2.5 | | nC | | 2 |
| Turn-On Delay Time | tD(on) | | 4.5 | | ns | VGS=10V, VDS=15V, RL=2.42W, RGEN=3W | 2 |
| Turn-On Rise Time | tr | | 4 | | ns | VGS=10V, VDS=15V, RL=2.42W, RGEN=3W | 2 |
| Turn-Off Delay Time | tD(off) | | 20 | | ns | VGS=10V, VDS=15V, RL=2.42W, RGEN=3W | 2 |
| Turn-Off Fall Time | tf | | 4 | | ns | VGS=10V, VDS=15V, RL=2.42W, RGEN=3W | 2 |
| Body Diode Reverse Recovery Time | trr | | 5 | | ns | IF=6.2A, di/dt=500A/ms | 2 |
| Body Diode Reverse Recovery Charge | Qrr | | 6 | | nC | IF=6.2A, di/dt=500A/ms | 2 |
## CAD (KiCad official)
- Symbol: `AO3400C`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `ao3400c-etched.step` / `ao3400c-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ao3400c.step` / `ao3400c.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Alpha Omega Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588885770694639616) (5 pp, sha256 `1492cf469fcb1d83`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ao3400c-datasheet.pdf)