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AO3400C

Alpha Omega Semicon · MOSFETs · SOT-23

AO3400C from Alpha Omega Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate, ESD-protected, with a maximum gate-source voltage of ±20V and a gate threshold of 1.3V min to 2.3V max.
2 S passive Source terminal of the N-channel MOSFET, which is the body-diode anode side.
3 D passive Drain, rated for a maximum drain-source voltage of 30V and 6.2A continuous at TA=25°C.

Key specifications

Parameter Value
Manufacturer Alpha Omega Semicon
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 6.2 A TA=25°C 1
Continuous Drain Current ID 4.8 A TA=70°C 1
Pulsed Drain Current IDM 40 A 1
Power Dissipation PD 1.3 W 1
Power Dissipation PD 0.8 W TA=70°C 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Maximum Junction-to-Ambient RqJA 63 °C/W t ≤ 10s 1
Maximum Junction-to-Ambient RqJA 125 °C/W Steady-State 1
Maximum Junction-to-Lead RqJL 80 °C/W Steady-State 1
Drain-Source Breakdown Voltage BVDSS 30 V ID=250μA, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=30V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 5 μA VDS=30V, VGS=0V, TJ=55°C 2
Gate-Body Leakage Current IGSS -10 10 μA VDS=0V, VGS=±20V 2
Gate Threshold Voltage VGS(th) 1.3 1.8 2.3 V VDS=VGS, ID=250mA 2
Static Drain-Source On-Resistance RDS(ON) 16 20 mΩ VGS=10V, ID=6.2A 2
Static Drain-Source On-Resistance (TJ=125°C) RDS(ON) 24 30 mΩ TJ=125°C 2
Static Drain-Source On-Resistance RDS(ON) 20 26 mΩ VGS=4.5V, ID=5.5A 2
Diode Forward Voltage VSD 0.7 1 V IS=1A, VGS=0V 2
Maximum Body-Diode Continuous Current IS 2 A 2
Gate Resistance Rg 1.2 2.4 3.6 Ω f=1MHz 2
Total Gate Charge (10V) Qg 12 20 nC VGS=10V, VDS=15V, ID=6.2A 2
Total Gate Charge (4.5V) Qg 6 12 nC 2
Forward Transconductance gFS 33 S VDS=5V, ID=6.2A 2
Input Capacitance Ciss 600 pF VGS=0V, VDS=15V, f=1MHz 2
Output Capacitance Coss 70 pF VGS=0V, VDS=15V, f=1MHz 2
Reverse Transfer Capacitance Crss 60 pF VGS=0V, VDS=15V, f=1MHz 2
Gate Source Charge Qgs 2.2 nC 2
Gate Drain Charge Qgd 2.5 nC 2
Turn-On Delay Time tD(on) 4.5 ns VGS=10V, VDS=15V, RL=2.42W, RGEN=3W 2
Turn-On Rise Time tr 4 ns VGS=10V, VDS=15V, RL=2.42W, RGEN=3W 2
Turn-Off Delay Time tD(off) 20 ns VGS=10V, VDS=15V, RL=2.42W, RGEN=3W 2
Turn-Off Fall Time tf 4 ns VGS=10V, VDS=15V, RL=2.42W, RGEN=3W 2
Body Diode Reverse Recovery Time trr 5 ns IF=6.2A, di/dt=500A/ms 2
Body Diode Reverse Recovery Charge Qrr 6 nC IF=6.2A, di/dt=500A/ms 2

CAD (KiCad official)

  • Symbol: AO3400C
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: ao3400c-etched.step / ao3400c-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao3400c.step / ao3400c.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Alpha Omega Semicon datasheet (5 pp, sha256 1492cf469fcb1d83, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF