# AMC1350DWVR

**Texas Instruments** · Isolation Amplifiers · SOIC-8

AMC1350DWVR from Texas Instruments, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VDD1 | power_in | High-side power supply; see the Power Supply Recommendations section for decoupling. |
| 2 | INP | input | Noninverting analog input; either INP or INN must have a DC current path to GND1 to define the common-mode input voltage. |
| 3 | INN | input | Inverting analog input; either INP or INN must have a DC current path to GND1 to define the common-mode input voltage. |
| 4 | GND1 | power_in | High-side analog ground. |
| 5 | GND2 | power_in | Low-side analog ground. |
| 6 | OUTN | output | Inverting analog output. |
| 7 | OUTP | output | Noninverting analog output. |
| 8 | VDD2 | power_in | Low-side power supply; see the Power Supply Recommendations section for decoupling. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | SOIC-8 |
| Category | Signal Isolation Devices |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Offset voltage | VOS | -1.5 | 0.3 | 1.5 | mV | TA = 25°C, INN = INP = GND1, 4.5 V ≤ VDD1 ≤ 5.5 V | 8 |
| Offset voltage | VOS | -2.5 | -0.8 | 2.5 | mV | TA = 25°C, INN = INP = GND1, 3.0 V ≤ VDD1 ≤ 5.5 V | 8 |
| Offset voltage thermal drift | TCVOS | -15 | 3 | 15 | µV/°C | INN = INP = GND1 | 8 |
| Input resistance, differential | RIN | 2 | 2.5 | 3 | MΩ |  | 8 |
| Input resistance, single ended |  | 1 | 1.25 | 1.5 | MΩ | INN = GND1 | 8 |
| Gain error | EG | -0.2 | 0.05 | 0.2 | % | TA = 25℃ | 8 |
| Gain error thermal drift | TCEG | -35 | 10 | 35 | ppm/°C |  | 8 |
| Nonlinearity |  | -0.02 | 0.003 | 0.02 | % |  | 8 |
| VDD1 undervoltage detection threshold | VDD1UV | 2.5 | 2.7 | 2.9 | V | VDD1 rising | 9 |
| VDD1 undervoltage detection threshold | VDD1UV | 2.4 | 2.6 | 2.8 | V | VDD1 falling | 9 |
| VDD2 undervoltage detection threshold | VDD2UV | 2.2 | 2.45 | 2.65 | V | VDD2 rising | 9 |
| VDD2 undervoltage detection threshold | VDD2UV | 1.85 | 2 | 2.2 | V | VDD2 falling | 9 |
| High-side supply current | IDD1 |  | 6 | 8.1 | mA | 3.0 V < VDD1 < 3.6 V | 9 |
| High-side supply current | IDD1 |  | 7 | 9.3 | mA | 4.5 V < VDD1 < 5.5 V | 9 |
| Low-side supply current | IDD2 |  | 5.3 | 7.2 | mA | 3.0 V < VDD2 < 3.6 V | 9 |
| Low-side supply current | IDD2 |  | 5.9 | 8.1 | mA | 4.5 V < VDD2 < 5.5 V | 9 |
| Output common-mode voltage | VCMout | 1.39 | 1.44 | 1.49 | V |  | 8 |
| Output resistance | ROUT |  |  | 0.2 | Ω | On OUTP or OUTN | 9 |
| Common-mode transient immunity | CMTI | 100 | 150 |  | kV/µs |  | 9 |
| Fail-safe differential output voltage | VFail-safe |  |  | -2.5 | V | VDD1 undervoltage or VDD1 missing | 8 |
| High-side power-supply voltage VDD1 (recommended) | VDD1 | 3 | 5 | 5.5 | V |  | 4 |
| Low-side power-supply voltage VDD2 (recommended) | VDD2 | 3 | 3.3 | 5.5 | V |  | 4 |
| Input voltage before clipping output | VClipping | -6.25 |  | 6.25 | V | VIN = VINP, VINN | 4 |
| Specified linear full-scale voltage | VFSR | -5 |  | 5 | V | VIN = VINP, VINN | 4 |
| Operating common-mode input voltage | VCM | -4 |  | 4 | V |  | 4 |
| Capacitive load | CLOAD |  |  | 500 | pF | On OUTP or OUTN to GND2 | 4 |
| Capacitive load | CLOAD |  |  | 250 | pF | OUTP to OUTN | 4 |
| Operating ambient temperature | TA | -55 |  | 125 | °C |  | 4 |
| Specified ambient temperature |  | -40 |  | 125 | °C |  | 4 |
| High-side power-supply voltage VDD1 to GND1 |  | -0.3 |  | 6.5 | V |  | 4 |
| Low-side power-supply voltage VDD2 to GND2 |  | -0.3 |  | 6.5 | V |  | 4 |
| Analog input voltage INP, INN |  | -15 |  | 15 | V |  | 4 |
| Input current |  | -10 |  | 10 | mA | Continuous, any pin except power-supply pins | 4 |
| Junction temperature | TJ |  |  | 150 | °C |  | 4 |
| Storage temperature | Tstg | -65 |  | 150 | °C |  | 4 |
| Junction-to-ambient thermal resistance | RθJA |  | 84.6 |  | °C/W |  | 5 |
| Junction-to-case (top) thermal resistance | RθJC(top) |  | 28.3 |  | °C/W |  | 5 |
| Junction-to-board thermal resistance | RθJB |  | 41.1 |  | °C/W |  | 5 |
| Junction-to-top characterization parameter | ψJT |  | 4.9 |  | °C/W |  | 5 |
| Junction-to-board characterization parameter | ψJB |  | 39.1 |  | °C/W |  | 5 |

## CAD (KiCad official)

- Symbol: `AMC1350DWVR`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files: `amc1350dwvr-etched.step` / `amc1350dwvr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `amc1350dwvr.step` / `amc1350dwvr.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Texas Instruments datasheet](https://www.ti.com/cn/lit/gpn/amc1350) (38 pp, sha256 `4c741fa0d99fe1df`, retrieved 2026-10-17, tier: lcsc)
- **Datasheet language:** Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/amc1350dwvr-datasheet.pdf)