# AM2394NE-VB

**VBsemi Elec** · MOSFETs · SOT-23(TO-236)

AM2394NE-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V with threshold 1.2 to 2.8 V at ID = 250 µA. |
| 2 | S | passive | Source; continuous source-drain body diode current is 2.1 A at TC = 25 °C. |
| 3 | D | passive | Drain; drain-source voltage rated 100 V with continuous drain current of 2 A at TC = 25 °C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23(TO-236) |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 100 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 2 | A | TJ = 150 °C; TC = 25 °C | 1 |
| Continuous Drain Current | ID |  |  | 1.8 | A | TJ = 150 °C; TC = 70 °C | 1 |
| Continuous Drain Current | ID |  |  | 1.6 | A | TJ = 150 °C; Tb,A = 25 °C | 1 |
| Continuous Drain Current | ID |  |  | 1.3 | A | TJ = 150 °C; Tb,A = 70 °C | 1 |
| Pulsed Drain Current | IDM |  |  | 7 | A | t = 300 µs | 1 |
| Continuous Source-Drain Diode Current | IS |  |  | 2.1 | A | TC = 25 °C | 1 |
| Continuous Source-Drain Diode Current | IS |  |  | 1 | A | Tb,A = 25 °C | 1 |
| Single Pulse Avalanche Current | IAS |  |  | 5 | A | L = 0.1 mH | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 1.25 | mJ |  | 1 |
| Maximum Power Dissipation | PD |  |  | 2.5 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 1.6 | W | TC = 70 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 1.25 | W | Tb,A = 25 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 0.8 | W | Tb,A = 70 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Maximum Junction-to-Ambient (5 s) | RthJA |  | 75 | 100 | °C/W | t = 5 s | 1 |
| Maximum Junction-to-Foot (Drain), Steady State | RthJF |  | 40 | 50 | °C/W | Steady state | 1 |
| Maximum Junction-to-Ambient, steady state | RthJA |  |  | 166 | °C/W | Steady-state conditions (note d) | 1 |
| Drain-Source Breakdown Voltage | VDS | 100 |  |  | V | VDS = 0 V, ID = 250 µA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 1.2 |  | 2.8 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate-Source Leakage | IGSS | -100 |  | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS = 100 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 10 | µA | VDS = 100 V, VGS = 0 V, TJ = 55 °C | 2 |
| On-State Drain Current | ID(on) | 5 |  |  | A | VDS 5 V, VGS = 4.5 V | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.24 | Ω | VGS = 10 V, ID = 1.5 A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.25 | Ω | VGS = 6 V, ID = 1 A | 2 |
| Gate Resistance | Rg | 0.3 | 1.4 | 2.8 | Ω | f = 1 MHz | 2 |
| Total Gate Charge | Qg |  | 5.2 | 10.4 | nC | VDS = 50 V, VGS = 10 V, ID = 1.6 A | 2 |
| Total Gate Charge | Qg |  | 2.9 | 5.8 | nC | VDS = 50 V, VGS = 4.5 V, ID = 1.6 A | 2 |
| Continuous Source-Drain Diode Current | IS |  |  | 2.1 | A | TC = 25 °C | 2 |
| Pulse Diode Forward Current | ISM |  |  | 20 | A |  | 2 |
| Body Diode Voltage | VSD |  | 0.8 | 1.2 | V | IS = 1.3 A | 2 |
| Body Diode Reverse Recovery Time | trr |  | 22 | 33 | ns | IF = 1.3 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
| Body Diode Reverse Recovery Charge | Qrr |  | 21 | 32 | nC | IF = 1.3 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
| Turn-On Delay Time (VGEN = 4.5 V) | td(on) |  | 30 | 45 | ns | VDD = 50 V, RL = 39 Ω, ID = 1.3 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Rise Time (VGEN = 4.5 V) | tr |  | 26 | 39 | ns | VDD = 50 V, RL = 39 Ω, ID = 1.3 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time (VGEN = 4.5 V) | td(off) |  | 17 | 26 | ns | VDD = 50 V, RL = 39 Ω, ID = 1.3 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Fall Time (VGEN = 4.5 V) | tf |  | 12 | 20 | ns | VDD = 50 V, RL = 39 Ω, ID = 1.3 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Turn-On Delay Time (VGEN = 10 V) | td(on) |  | 6 | 12 | ns | VDD = 50 V, RL = 39 Ω, ID = 1.3 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Rise Time (VGEN = 10 V) | tr |  | 10 | 20 | ns | VDD = 50 V, RL = 39 Ω, ID = 1.3 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time (VGEN = 10 V) | td(off) |  | 10 | 20 | ns | VDD = 50 V, RL = 39 Ω, ID = 1.3 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Fall Time (VGEN = 10 V) | tf |  | 6 | 12 | ns | VDD = 50 V, RL = 39 Ω, ID = 1.3 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| VDS Temperature Coefficient | VDS/TJ |  | 105 |  | mV/°C | ID = 250 µA | 2 |
| VGS(th) Temperature Coefficient | VGS(th)/TJ |  | -5.2 |  |  |  | 2 |
| Forward Transconductance | gfs |  | 2 |  | S | VDS = 20 V, ID = 1.5 A | 2 |

## CAD (KiCad official)

- Symbol: `AM2394NE-VB`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
- 3D model files: `am2394ne-vb-etched.step` / `am2394ne-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `am2394ne-vb.step` / `am2394ne-vb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8609094093318877184) (9 pp, sha256 `39e0717179bd1024`, retrieved 2026-10-15, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/am2394ne-vb-datasheet.pdf)