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AM2394NE-VB

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VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AM2394NE-VB

VBsemi Elec · MOSFETs · SOT-23(TO-236)

AM2394NE-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V with threshold 1.2 to 2.8 V at ID = 250 µA.
2 S passive Source; continuous source-drain body diode current is 2.1 A at TC = 25 °C.
3 D passive Drain; drain-source voltage rated 100 V with continuous drain current of 2 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SOT-23(TO-236)
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 2 A TJ = 150 °C; TC = 25 °C 1
Continuous Drain Current ID 1.8 A TJ = 150 °C; TC = 70 °C 1
Continuous Drain Current ID 1.6 A TJ = 150 °C; Tb,A = 25 °C 1
Continuous Drain Current ID 1.3 A TJ = 150 °C; Tb,A = 70 °C 1
Pulsed Drain Current IDM 7 A t = 300 µs 1
Continuous Source-Drain Diode Current IS 2.1 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS 1 A Tb,A = 25 °C 1
Single Pulse Avalanche Current IAS 5 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 1.25 mJ 1
Maximum Power Dissipation PD 2.5 W TC = 25 °C 1
Maximum Power Dissipation PD 1.6 W TC = 70 °C 1
Maximum Power Dissipation PD 1.25 W Tb,A = 25 °C 1
Maximum Power Dissipation PD 0.8 W Tb,A = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient (5 s) RthJA 75 100 °C/W t = 5 s 1
Maximum Junction-to-Foot (Drain), Steady State RthJF 40 50 °C/W Steady state 1
Maximum Junction-to-Ambient, steady state RthJA 166 °C/W Steady-state conditions (note d) 1
Drain-Source Breakdown Voltage VDS 100 V VDS = 0 V, ID = 250 µA 2
Gate-Source Threshold Voltage VGS(th) 1.2 2.8 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 100 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 100 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) 5 A VDS 5 V, VGS = 4.5 V 2
Drain-Source On-State Resistance RDS(on) 0.24 Ω VGS = 10 V, ID = 1.5 A 2
Drain-Source On-State Resistance RDS(on) 0.25 Ω VGS = 6 V, ID = 1 A 2
Gate Resistance Rg 0.3 1.4 2.8 Ω f = 1 MHz 2
Total Gate Charge Qg 5.2 10.4 nC VDS = 50 V, VGS = 10 V, ID = 1.6 A 2
Total Gate Charge Qg 2.9 5.8 nC VDS = 50 V, VGS = 4.5 V, ID = 1.6 A 2
Continuous Source-Drain Diode Current IS 2.1 A TC = 25 °C 2
Pulse Diode Forward Current ISM 20 A 2
Body Diode Voltage VSD 0.8 1.2 V IS = 1.3 A 2
Body Diode Reverse Recovery Time trr 22 33 ns IF = 1.3 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 21 32 nC IF = 1.3 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Turn-On Delay Time (VGEN = 4.5 V) td(on) 30 45 ns VDD = 50 V, RL = 39 Ω, ID = 1.3 A, VGEN = 4.5 V, Rg = 1 Ω 2
Rise Time (VGEN = 4.5 V) tr 26 39 ns VDD = 50 V, RL = 39 Ω, ID = 1.3 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time (VGEN = 4.5 V) td(off) 17 26 ns VDD = 50 V, RL = 39 Ω, ID = 1.3 A, VGEN = 4.5 V, Rg = 1 Ω 2
Fall Time (VGEN = 4.5 V) tf 12 20 ns VDD = 50 V, RL = 39 Ω, ID = 1.3 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-On Delay Time (VGEN = 10 V) td(on) 6 12 ns VDD = 50 V, RL = 39 Ω, ID = 1.3 A, VGEN = 10 V, Rg = 1 Ω 2
Rise Time (VGEN = 10 V) tr 10 20 ns VDD = 50 V, RL = 39 Ω, ID = 1.3 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-Off Delay Time (VGEN = 10 V) td(off) 10 20 ns VDD = 50 V, RL = 39 Ω, ID = 1.3 A, VGEN = 10 V, Rg = 1 Ω 2
Fall Time (VGEN = 10 V) tf 6 12 ns VDD = 50 V, RL = 39 Ω, ID = 1.3 A, VGEN = 10 V, Rg = 1 Ω 2
VDS Temperature Coefficient VDS/TJ 105 mV/°C ID = 250 µA 2
VGS(th) Temperature Coefficient VGS(th)/TJ -5.2 2
Forward Transconductance gfs 2 S VDS = 20 V, ID = 1.5 A 2

CAD (KiCad official)

  • Symbol: AM2394NE-VB
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
  • 3D model files: am2394ne-vb-etched.step / am2394ne-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); am2394ne-vb.step / am2394ne-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 39e0717179bd1024, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF