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AM2370N-T1-PF-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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AM2370N-T1-PF-VB
VBsemi Elec · MOSFETs · SOT-23(TO-236)
AM2370N-T1-PF-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol and footprint from KiCad-official CAD; the 3D model is generated from the datasheet's package dimensions.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±20 V with a threshold of 1.2 to 2.8 V at ID = 250 µA. |
| 2 | S | passive | Source; continuous source-drain body diode current is 2.1 A at TC = 25 °C. |
| 3 | D | passive | Drain; drain-source voltage is rated 100 V, with continuous drain current of 2 A at TC = 25 °C and pulsed drain current of 7 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23(TO-236) |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 2 | A | TC = 25 °C (TJ = 150 °C) | 1 | ||
| Continuous Drain Current | ID | 1.8 | A | TC = 70 °C (TJ = 150 °C) | 1 | ||
| Continuous Drain Current | ID | 1.6 | A | TA = 25 °C (Tb), surface mounted, t = 5 s | 1 | ||
| Continuous Drain Current | ID | 1.3 | A | TA = 70 °C (Tb), surface mounted, t = 5 s | 1 | ||
| Pulsed Drain Current | IDM | 7 | A | t = 300 µs | 1 | ||
| Single Pulse Avalanche Current | IAS | 5 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 1.25 | mJ | 1 | |||
| Continuous Source-Drain Diode Current | IS | 2.1 | A | TC = 25 °C | 1 | ||
| Continuous Source-Drain Diode Current | IS | 1 | A | TA = 25 °C (Tb), surface mounted | 1 | ||
| Maximum Power Dissipation | PD | 2.5 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 1.6 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation | PD | 1.25 | W | TA = 25 °C (Tb), surface mounted | 1 | ||
| Maximum Power Dissipation | PD | 0.8 | W | TA = 70 °C (Tb), surface mounted | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient (t = 5 s) | RthJA | 75 | 100 | °C/W | t = 5 s | 1 | |
| Maximum Junction-to-Ambient (steady state) | RthJA | 166 | °C/W | steady state (from note d) | 1 | ||
| Maximum Junction-to-Foot (Drain), steady state | RthJF | 40 | 50 | °C/W | steady state | 1 | |
| Drain-Source Breakdown Voltage | VDS | 100 | V | VDS = 0 V, ID = 250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 1.2 | 2.8 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 100 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | µA | VDS = 100 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | 5 | A | VDS ≥ 5 V, VGS = 4.5 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.24 | Ω | VGS = 10 V, ID = 1.5 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.25 | Ω | VGS = 6 V, ID = 1 A | 2 | ||
| Gate Resistance | Rg | 0.3 | 1.4 | 2.8 | Ω | f = 1 MHz | 2 |
| Total Gate Charge | Qg | 5.2 | 10.4 | nC | VDS = 50 V, VGS = 10 V, ID = 1.6 A | 2 | |
| Total Gate Charge | Qg | 2.9 | 5.8 | nC | VDS = 50 V, VGS = 4.5 V, ID = 1.6 A | 2 | |
| Turn-On Delay Time | td(on) | 30 | 45 | ns | VDD = 50 V, RL = 39 Ω, ID = 1.3 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 26 | 39 | ns | VDD = 50 V, RL = 39 Ω, ID = 1.3 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 17 | 26 | ns | VDD = 50 V, RL = 39 Ω, ID = 1.3 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 12 | 20 | ns | VDD = 50 V, RL = 39 Ω, ID = 1.3 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Turn-On Delay Time | td(on) | 6 | 12 | ns | VDD = 50 V, RL = 39 Ω, ID = 1.3 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 10 | 20 | ns | VDD = 50 V, RL = 39 Ω, ID = 1.3 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 10 | 20 | ns | VDD = 50 V, RL = 39 Ω, ID = 1.3 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 6 | 12 | ns | VDD = 50 V, RL = 39 Ω, ID = 1.3 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Continuous Source-Drain Diode Current | IS | 2.1 | A | TC = 25 °C | 2 | ||
| Pulse Diode Forward Current | ISM | 20 | A | 2 | |||
| Body Diode Voltage | VSD | 0.8 | 1.2 | V | IS = 1.3 A | 2 | |
| Body Diode Reverse Recovery Time | trr | 22 | 33 | ns | IF = 1.3 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 21 | 32 | nC | IF = 1.3 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
CAD (land: KiCad; 3D: generated from the datasheet)
- Symbol:
AM2370N-T1-PF-VB - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23(TO-236), generated on the KiCad land (body 1.3 x 2.92 mm, terminals on the pads, 1.0050000000000001 mm tall, datasheet A, midpoint of min and max). KiCad's stock model for this land is taller than the datasheet allows, so the model is generated from the datasheet drawing; the dimensions come from the datasheet drawing where it was read and are defaults otherwise (see provenance.model_3d_generated), not the manufacturer's CAD (STEP)
- 3D model files:
am2370n-t1-pf-vb-etched.step/am2370n-t1-pf-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);am2370n-t1-pf-vb.step/am2370n-t1-pf-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
43cbe7d1c87e3aee, retrieved 2026-11-13, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: land: KiCad official libraries (CC-BY-SA 4.0); 3D: generated from the datasheet's package dimensions (provenance.model_3d_generated).
# AM2370N-T1-PF-VB
**VBsemi Elec** · MOSFETs · SOT-23(TO-236)
AM2370N-T1-PF-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol and footprint from KiCad-official CAD; the 3D model is generated from the datasheet's package dimensions.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±20 V with a threshold of 1.2 to 2.8 V at ID = 250 µA. |
| 2 | S | passive | Source; continuous source-drain body diode current is 2.1 A at TC = 25 °C. |
| 3 | D | passive | Drain; drain-source voltage is rated 100 V, with continuous drain current of 2 A at TC = 25 °C and pulsed drain current of 7 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23(TO-236) |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 100 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | 2 | A | TC = 25 °C (TJ = 150 °C) | 1 |
| Continuous Drain Current | ID | | | 1.8 | A | TC = 70 °C (TJ = 150 °C) | 1 |
| Continuous Drain Current | ID | | | 1.6 | A | TA = 25 °C (Tb), surface mounted, t = 5 s | 1 |
| Continuous Drain Current | ID | | | 1.3 | A | TA = 70 °C (Tb), surface mounted, t = 5 s | 1 |
| Pulsed Drain Current | IDM | | | 7 | A | t = 300 µs | 1 |
| Single Pulse Avalanche Current | IAS | | | 5 | A | L = 0.1 mH | 1 |
| Single Pulse Avalanche Energy | EAS | | | 1.25 | mJ | | 1 |
| Continuous Source-Drain Diode Current | IS | | | 2.1 | A | TC = 25 °C | 1 |
| Continuous Source-Drain Diode Current | IS | | | 1 | A | TA = 25 °C (Tb), surface mounted | 1 |
| Maximum Power Dissipation | PD | | | 2.5 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD | | | 1.6 | W | TC = 70 °C | 1 |
| Maximum Power Dissipation | PD | | | 1.25 | W | TA = 25 °C (Tb), surface mounted | 1 |
| Maximum Power Dissipation | PD | | | 0.8 | W | TA = 70 °C (Tb), surface mounted | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Maximum Junction-to-Ambient (t = 5 s) | RthJA | | 75 | 100 | °C/W | t = 5 s | 1 |
| Maximum Junction-to-Ambient (steady state) | RthJA | | | 166 | °C/W | steady state (from note d) | 1 |
| Maximum Junction-to-Foot (Drain), steady state | RthJF | | 40 | 50 | °C/W | steady state | 1 |
| Drain-Source Breakdown Voltage | VDS | 100 | | | V | VDS = 0 V, ID = 250 µA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 1.2 | | 2.8 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS = 100 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 10 | µA | VDS = 100 V, VGS = 0 V, TJ = 55 °C | 2 |
| On-State Drain Current | ID(on) | 5 | | | A | VDS ≥ 5 V, VGS = 4.5 V | 2 |
| Drain-Source On-State Resistance | RDS(on) | | | 0.24 | Ω | VGS = 10 V, ID = 1.5 A | 2 |
| Drain-Source On-State Resistance | RDS(on) | | | 0.25 | Ω | VGS = 6 V, ID = 1 A | 2 |
| Gate Resistance | Rg | 0.3 | 1.4 | 2.8 | Ω | f = 1 MHz | 2 |
| Total Gate Charge | Qg | | 5.2 | 10.4 | nC | VDS = 50 V, VGS = 10 V, ID = 1.6 A | 2 |
| Total Gate Charge | Qg | | 2.9 | 5.8 | nC | VDS = 50 V, VGS = 4.5 V, ID = 1.6 A | 2 |
| Turn-On Delay Time | td(on) | | 30 | 45 | ns | VDD = 50 V, RL = 39 Ω, ID = 1.3 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Rise Time | tr | | 26 | 39 | ns | VDD = 50 V, RL = 39 Ω, ID = 1.3 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) | | 17 | 26 | ns | VDD = 50 V, RL = 39 Ω, ID = 1.3 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Fall Time | tf | | 12 | 20 | ns | VDD = 50 V, RL = 39 Ω, ID = 1.3 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Turn-On Delay Time | td(on) | | 6 | 12 | ns | VDD = 50 V, RL = 39 Ω, ID = 1.3 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Rise Time | tr | | 10 | 20 | ns | VDD = 50 V, RL = 39 Ω, ID = 1.3 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) | | 10 | 20 | ns | VDD = 50 V, RL = 39 Ω, ID = 1.3 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Fall Time | tf | | 6 | 12 | ns | VDD = 50 V, RL = 39 Ω, ID = 1.3 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Continuous Source-Drain Diode Current | IS | | | 2.1 | A | TC = 25 °C | 2 |
| Pulse Diode Forward Current | ISM | | | 20 | A | | 2 |
| Body Diode Voltage | VSD | | 0.8 | 1.2 | V | IS = 1.3 A | 2 |
| Body Diode Reverse Recovery Time | trr | | 22 | 33 | ns | IF = 1.3 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
| Body Diode Reverse Recovery Charge | Qrr | | 21 | 32 | nC | IF = 1.3 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
## CAD (land: KiCad; 3D: generated from the datasheet)
- Symbol: `AM2370N-T1-PF-VB`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23(TO-236), generated on the KiCad land (body 1.3 x 2.92 mm, terminals on the pads, 1.0050000000000001 mm tall, datasheet A, midpoint of min and max). KiCad's stock model for this land is taller than the datasheet allows, so the model is generated from the datasheet drawing; the dimensions come from the datasheet drawing where it was read and are defaults otherwise (see provenance.model_3d_generated), not the manufacturer's CAD (STEP)
- 3D model files: `am2370n-t1-pf-vb-etched.step` / `am2370n-t1-pf-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `am2370n-t1-pf-vb.step` / `am2370n-t1-pf-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](docs/am2370n-t1-pf-vb-datasheet.pdf) (9 pp, sha256 `43cbe7d1c87e3aee`, retrieved 2026-11-13, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** land: KiCad official libraries (CC-BY-SA 4.0); 3D: generated from the datasheet's package dimensions (provenance.model_3d_generated).
[Datasheet PDF](docs/am2370n-t1-pf-vb-datasheet.pdf)