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AIGB15N65H5

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Infineon Technologies Pre-ordered transistors, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AIGB15N65H5

Infineon Technologies · Pre-ordered transistors · TO-263

AIGB15N65H5 from Infineon Technologies, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-emitter threshold VGE(th) 3.2 V min / 4.0 V typ / 4.8 V max at IC=0.15 mA, maximum gate-emitter voltage ±20 V (±30 V transient, tp ≤10 µs).
2 C passive Collector (also connected to the backside tab); collector-emitter voltage rated 650 V and DC collector current 30 A at Tc=25°C (18 A at Tc=100°C).
3 E passive Emitter; main current return terminal for the IGBT, with VCEsat of 1.65 V typ at IC=15 A, VGE=15 V, Tvj=25°C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-263
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter voltage VCE 650 V Tvj ≥25°C 3
DC collector current IC 30 A Tc=25°C, limited by Tvjmax 3
DC collector current IC 18 A Tc=100°C, limited by Tvjmax 3
Pulsed collector current ICpuls 45 A tp limited by Tvjmax 3
Turn off safe operating area 45 A VCE ≤650V, Tvj ≤175°C, tp=1µs 3
Gate-emitter voltage VGE -20 20 V 3
Transient gate-emitter voltage VGE -30 30 V tp ≤10µs, D<0.010 3
Power dissipation Ptot 105 W Tc=25°C 3
Power dissipation Ptot 52.5 W Tc=100°C 3
Operating junction temperature Tvj -40 175 °C 3
Storage temperature Tstg -55 150 °C 3
Soldering temperature 260 °C reflow soldering (MSL1 according to JEDEC J-STA-020) 3
IGBT thermal resistance, junction - case Rth(j-c) 1.4 K/W 3
Thermal resistance, min. footprint, junction - ambient Rth(j-a) 65 K/W 3
Thermal resistance, 6cm² Cu on PCB, junction - ambient Rth(j-a) 40 K/W 3
Collector-emitter breakdown voltage V(BR)CES 650 V VGE=0V, IC=0.20mA 3
Collector-emitter saturation voltage VCEsat 1.65 2.1 V VGE=15.0V, IC=15.0A, Tvj=25°C 3
Collector-emitter saturation voltage VCEsat 1.85 V VGE=15.0V, IC=15.0A, Tvj=125°C 3
Collector-emitter saturation voltage VCEsat 1.95 V VGE=15.0V, IC=15.0A, Tvj=175°C 3
Gate-emitter threshold voltage VGE(th) 3.2 4 4.8 V IC=0.15mA, VCE=VGE 3
Zero gate voltage collector current ICES 1000 µA VCE=650V, VGE=0V, Tvj=175°C 3
Zero gate voltage collector current ICES 40 µA VCE=650V, VGE=0V, Tvj=25°C 3
Gate-emitter leakage current IGES 100 nA VCE=0V, VGE=20V 3
Transconductance gfs 15 S VCE=20V, IC=15.0A 3
Input capacitance Cies 930 pF VCE=25V, VGE=0V, f=1MHz 4
Output capacitance Coes 24 pF VCE=25V, VGE=0V, f=1MHz 4
Reverse transfer capacitance Cres 4 pF VCE=25V, VGE=0V, f=1MHz 4
Gate charge QG 40 nC VCC=520V, IC=15.0A, VGE=15V 4
Internal emitter inductance LE 7 nH measured 5mm (0.197 in.) from case 4
Turn-on delay time td(on) 24 ns Tvj=25°C, VCC=400V, IC=7.5A, VGE=0.0/15.0V, RG(on)=39.0Ω, RG(off)=39.0Ω 4
Rise time tr 13 ns Tvj=25°C, VCC=400V, IC=7.5A, VGE=0.0/15.0V, RG(on)=39.0Ω, RG(off)=39.0Ω 4
Turn-off delay time td(off) 151 ns Tvj=25°C, VCC=400V, IC=7.5A, VGE=0.0/15.0V, RG(on)=39.0Ω, RG(off)=39.0Ω 4
Fall time tf 22 ns Tvj=25°C, VCC=400V, IC=7.5A, VGE=0.0/15.0V, RG(on)=39.0Ω, RG(off)=39.0Ω 4
Turn-on energy Eon 0.16 mJ Tvj=25°C, VCC=400V, IC=7.5A, VGE=0.0/15.0V, RG(on)=39.0Ω 4
Turn-off energy Eoff 0.04 mJ Tvj=25°C, VCC=400V, IC=7.5A, VGE=0.0/15.0V, RG(off)=39.0Ω 4
Total switching energy Ets 0.2 mJ Tvj=25°C, VCC=400V, IC=7.5A, VGE=0.0/15.0V 4
Turn-on delay time td(on) 23 ns Tvj=150°C, VCC=400V, IC=7.5A, VGE=0.0/15.0V, RG(on)=39.0Ω, RG(off)=39.0Ω 5
Turn-off delay time td(off) 171 ns Tvj=150°C, VCC=400V, IC=7.5A, VGE=0.0/15.0V, RG(on)=39.0Ω, RG(off)=39.0Ω 5
Total switching energy Ets 0.29 mJ Tvj=150°C, VCC=400V, IC=7.5A, VGE=0.0/15.0V 5

CAD (KiCad official)

  • Symbol: AIGB15N65H5
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: aigb15n65h5-etched.step / aigb15n65h5-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aigb15n65h5.step / aigb15n65h5.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (14 pp, sha256 573e29ead2216832, retrieved 2026-10-26, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF