component
AIGB15N65H5
Public Made by Adomby adom
Infineon Technologies Pre-ordered transistors, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAIGB15N65H5
Infineon Technologies · Pre-ordered transistors · TO-263
AIGB15N65H5 from Infineon Technologies, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-emitter threshold VGE(th) 3.2 V min / 4.0 V typ / 4.8 V max at IC=0.15 mA, maximum gate-emitter voltage ±20 V (±30 V transient, tp ≤10 µs). |
| 2 | C | passive | Collector (also connected to the backside tab); collector-emitter voltage rated 650 V and DC collector current 30 A at Tc=25°C (18 A at Tc=100°C). |
| 3 | E | passive | Emitter; main current return terminal for the IGBT, with VCEsat of 1.65 V typ at IC=15 A, VGE=15 V, Tvj=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-263 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter voltage | VCE | 650 | V | Tvj ≥25°C | 3 | ||
| DC collector current | IC | 30 | A | Tc=25°C, limited by Tvjmax | 3 | ||
| DC collector current | IC | 18 | A | Tc=100°C, limited by Tvjmax | 3 | ||
| Pulsed collector current | ICpuls | 45 | A | tp limited by Tvjmax | 3 | ||
| Turn off safe operating area | 45 | A | VCE ≤650V, Tvj ≤175°C, tp=1µs | 3 | |||
| Gate-emitter voltage | VGE | -20 | 20 | V | 3 | ||
| Transient gate-emitter voltage | VGE | -30 | 30 | V | tp ≤10µs, D<0.010 | 3 | |
| Power dissipation | Ptot | 105 | W | Tc=25°C | 3 | ||
| Power dissipation | Ptot | 52.5 | W | Tc=100°C | 3 | ||
| Operating junction temperature | Tvj | -40 | 175 | °C | 3 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 3 | ||
| Soldering temperature | 260 | °C | reflow soldering (MSL1 according to JEDEC J-STA-020) | 3 | |||
| IGBT thermal resistance, junction - case | Rth(j-c) | 1.4 | K/W | 3 | |||
| Thermal resistance, min. footprint, junction - ambient | Rth(j-a) | 65 | K/W | 3 | |||
| Thermal resistance, 6cm² Cu on PCB, junction - ambient | Rth(j-a) | 40 | K/W | 3 | |||
| Collector-emitter breakdown voltage | V(BR)CES | 650 | V | VGE=0V, IC=0.20mA | 3 | ||
| Collector-emitter saturation voltage | VCEsat | 1.65 | 2.1 | V | VGE=15.0V, IC=15.0A, Tvj=25°C | 3 | |
| Collector-emitter saturation voltage | VCEsat | 1.85 | V | VGE=15.0V, IC=15.0A, Tvj=125°C | 3 | ||
| Collector-emitter saturation voltage | VCEsat | 1.95 | V | VGE=15.0V, IC=15.0A, Tvj=175°C | 3 | ||
| Gate-emitter threshold voltage | VGE(th) | 3.2 | 4 | 4.8 | V | IC=0.15mA, VCE=VGE | 3 |
| Zero gate voltage collector current | ICES | 1000 | µA | VCE=650V, VGE=0V, Tvj=175°C | 3 | ||
| Zero gate voltage collector current | ICES | 40 | µA | VCE=650V, VGE=0V, Tvj=25°C | 3 | ||
| Gate-emitter leakage current | IGES | 100 | nA | VCE=0V, VGE=20V | 3 | ||
| Transconductance | gfs | 15 | S | VCE=20V, IC=15.0A | 3 | ||
| Input capacitance | Cies | 930 | pF | VCE=25V, VGE=0V, f=1MHz | 4 | ||
| Output capacitance | Coes | 24 | pF | VCE=25V, VGE=0V, f=1MHz | 4 | ||
| Reverse transfer capacitance | Cres | 4 | pF | VCE=25V, VGE=0V, f=1MHz | 4 | ||
| Gate charge | QG | 40 | nC | VCC=520V, IC=15.0A, VGE=15V | 4 | ||
| Internal emitter inductance | LE | 7 | nH | measured 5mm (0.197 in.) from case | 4 | ||
| Turn-on delay time | td(on) | 24 | ns | Tvj=25°C, VCC=400V, IC=7.5A, VGE=0.0/15.0V, RG(on)=39.0Ω, RG(off)=39.0Ω | 4 | ||
| Rise time | tr | 13 | ns | Tvj=25°C, VCC=400V, IC=7.5A, VGE=0.0/15.0V, RG(on)=39.0Ω, RG(off)=39.0Ω | 4 | ||
| Turn-off delay time | td(off) | 151 | ns | Tvj=25°C, VCC=400V, IC=7.5A, VGE=0.0/15.0V, RG(on)=39.0Ω, RG(off)=39.0Ω | 4 | ||
| Fall time | tf | 22 | ns | Tvj=25°C, VCC=400V, IC=7.5A, VGE=0.0/15.0V, RG(on)=39.0Ω, RG(off)=39.0Ω | 4 | ||
| Turn-on energy | Eon | 0.16 | mJ | Tvj=25°C, VCC=400V, IC=7.5A, VGE=0.0/15.0V, RG(on)=39.0Ω | 4 | ||
| Turn-off energy | Eoff | 0.04 | mJ | Tvj=25°C, VCC=400V, IC=7.5A, VGE=0.0/15.0V, RG(off)=39.0Ω | 4 | ||
| Total switching energy | Ets | 0.2 | mJ | Tvj=25°C, VCC=400V, IC=7.5A, VGE=0.0/15.0V | 4 | ||
| Turn-on delay time | td(on) | 23 | ns | Tvj=150°C, VCC=400V, IC=7.5A, VGE=0.0/15.0V, RG(on)=39.0Ω, RG(off)=39.0Ω | 5 | ||
| Turn-off delay time | td(off) | 171 | ns | Tvj=150°C, VCC=400V, IC=7.5A, VGE=0.0/15.0V, RG(on)=39.0Ω, RG(off)=39.0Ω | 5 | ||
| Total switching energy | Ets | 0.29 | mJ | Tvj=150°C, VCC=400V, IC=7.5A, VGE=0.0/15.0V | 5 |
CAD (KiCad official)
- Symbol:
AIGB15N65H5 - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
aigb15n65h5-etched.step/aigb15n65h5-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aigb15n65h5.step/aigb15n65h5.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (14 pp, sha256
573e29ead2216832, retrieved 2026-10-26, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).