component
AGML315ME
Public Made by Adomby adom
AGM Semi MOSFETs, SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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AGML315ME
AGM Semi · MOSFETs · SOT-23-6L
AGML315ME from AGM Semi, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of MOSFET 1, gate-source voltage limit ±12V, threshold 0.5V min to 1.3V max for the N-channel at 250µA. |
| 2 | S2 | passive | Source of MOSFET 2, with drain-source voltage rating of 30V for the N-channel device and -30V for the P-channel device. |
| 3 | G2 | input | Gate of MOSFET 2, gate-source voltage limit ±12V, with gate threshold -0.6V to -1.3V for the P-channel at -250µA. |
| 4 | D2 | passive | Drain of MOSFET 2, with continuous drain current of 5.6A for the N-channel and -4.2A for the P-channel at TA=25°C. |
| 5 | S1 | passive | Source of MOSFET 1, with drain-source voltage rating of 30V for the N-channel device and -30V for the P-channel device. |
| 6 | D1 | passive | Drain of MOSFET 1, with continuous drain current of 5.6A for the N-channel and -4.2A for the P-channel at TA=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AGM Semi |
| Package | SOT-23-6L |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-Ch Drain-Source Voltage | VDS | 30 | V | VGS=0V | 1 | ||
| P-Ch Drain-Source Voltage | VDS | -30 | V | VGS=0V | 1 | ||
| N-Ch Gate-Source Voltage | VGS | -12 | 12 | V | VDS=0V | 1 | |
| P-Ch Gate-Source Voltage | VGS | -12 | 12 | V | VDS=0V | 1 | |
| N-Ch Drain Current-Continuous | ID | 5.6 | A | TA=25℃ (Note 1) | 1 | ||
| P-Ch Drain Current-Continuous | ID | -4.2 | A | TA=25℃ (Note 1) | 1 | ||
| N-Ch Drain Current-Continuous | ID | 3.5 | A | TA=100℃ | 1 | ||
| P-Ch Drain Current-Continuous | ID | -2.7 | A | TA=100℃ | 1 | ||
| N-Ch Drain Current-Pulsed | IDM (pluse) | 3 | A | Note 2 | 1 | ||
| P-Ch Drain Current-Pulsed | IDM (pluse) | -17 | A | Note 2 | 1 | ||
| N-Ch Total Power Dissipation | PD | 1.28 | W | TA=25℃ | 1 | ||
| P-Ch Total Power Dissipation | PD | 1.28 | W | TA=25℃ | 1 | ||
| N-Ch Avalanche energy | EAS | 4 | mJ | Note 3: TJ=25℃, VDD=15V, Vgs=10V, ID=4A, L=0.5mH, RG=25ohm | 1 | ||
| P-Ch Avalanche energy | EAS | 4 | mJ | Note 3: TJ=25℃, VDD=-15V, Vgs=-10V, ID=-4A, L=0.5mH, RG=25ohm | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 98 | ℃/W | Steady State | 1 | ||
| N-Ch Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V ID=250μA | 2 | ||
| N-Ch Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V,VGS=0V | 2 | ||
| N-Ch Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V,VDS=0V | 2 | |
| N-Ch Gate Threshold Voltage | VGS(th) | 0.5 | 0.9 | 1.3 | V | VDS=VGS,ID=250μA | 2 |
| N-Ch Drain-Source On-State Resistance | RDS(on) | 25 | 29 | mΩ | VGS=10V, ID=4A | 2 | |
| N-Ch Drain-Source On-State Resistance | RDS(on) | 27 | 32 | mΩ | VGS=4.5V, ID=3A | 2 | |
| N-Ch Source-Drain Current (Body Diode) | ISD | 5.6 | A | 2 | |||
| N-Ch Forward on Voltage | VSD | 1.2 | V | VGS=0V,IS=4A | 2 | ||
| P-Ch Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V ID=-250μA | 3 | ||
| P-Ch Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-30V,VGS=0V | 3 | ||
| P-Ch Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V,VDS=0V | 3 | |
| P-Ch Gate Threshold Voltage | VGS(th) | -0.6 | -1.3 | V | VDS=VGS,ID=-250μA | 3 | |
| P-Ch Drain-Source On-State Resistance | RDS(on) | 43 | 46 | mΩ | VGS=-10V, ID=-4A | 3 | |
| P-Ch Drain-Source On-State Resistance | RDS(on) | 51 | 55 | mΩ | VGS=-4.5V, ID=-3A | 3 | |
| P-Ch Source-Drain Current (Body Diode) | ISD | -4.2 | A | 3 | |||
| P-Ch Forward on Voltage | VSD | -0.8 | -1.2 | V | VGS=0V,IS=-4A | 3 |
CAD (KiCad official)
- Symbol:
AGML315ME - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files:
agml315me-etched.step/agml315me-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);agml315me.step/agml315me.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: AGM Semi datasheet (13 pp, sha256
7f09c0ebed1cadf8, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AGML315ME
**AGM Semi** · MOSFETs · SOT-23-6L
AGML315ME from AGM Semi, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of MOSFET 1, gate-source voltage limit ±12V, threshold 0.5V min to 1.3V max for the N-channel at 250µA. |
| 2 | S2 | passive | Source of MOSFET 2, with drain-source voltage rating of 30V for the N-channel device and -30V for the P-channel device. |
| 3 | G2 | input | Gate of MOSFET 2, gate-source voltage limit ±12V, with gate threshold -0.6V to -1.3V for the P-channel at -250µA. |
| 4 | D2 | passive | Drain of MOSFET 2, with continuous drain current of 5.6A for the N-channel and -4.2A for the P-channel at TA=25°C. |
| 5 | S1 | passive | Source of MOSFET 1, with drain-source voltage rating of 30V for the N-channel device and -30V for the P-channel device. |
| 6 | D1 | passive | Drain of MOSFET 1, with continuous drain current of 5.6A for the N-channel and -4.2A for the P-channel at TA=25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AGM Semi |
| Package | SOT-23-6L |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-Ch Drain-Source Voltage | VDS | | | 30 | V | VGS=0V | 1 |
| P-Ch Drain-Source Voltage | VDS | -30 | | | V | VGS=0V | 1 |
| N-Ch Gate-Source Voltage | VGS | -12 | | 12 | V | VDS=0V | 1 |
| P-Ch Gate-Source Voltage | VGS | -12 | | 12 | V | VDS=0V | 1 |
| N-Ch Drain Current-Continuous | ID | | | 5.6 | A | TA=25℃ (Note 1) | 1 |
| P-Ch Drain Current-Continuous | ID | -4.2 | | | A | TA=25℃ (Note 1) | 1 |
| N-Ch Drain Current-Continuous | ID | | | 3.5 | A | TA=100℃ | 1 |
| P-Ch Drain Current-Continuous | ID | -2.7 | | | A | TA=100℃ | 1 |
| N-Ch Drain Current-Pulsed | IDM (pluse) | | | 3 | A | Note 2 | 1 |
| P-Ch Drain Current-Pulsed | IDM (pluse) | -17 | | | A | Note 2 | 1 |
| N-Ch Total Power Dissipation | PD | | | 1.28 | W | TA=25℃ | 1 |
| P-Ch Total Power Dissipation | PD | | | 1.28 | W | TA=25℃ | 1 |
| N-Ch Avalanche energy | EAS | | | 4 | mJ | Note 3: TJ=25℃, VDD=15V, Vgs=10V, ID=4A, L=0.5mH, RG=25ohm | 1 |
| P-Ch Avalanche energy | EAS | | | 4 | mJ | Note 3: TJ=25℃, VDD=-15V, Vgs=-10V, ID=-4A, L=0.5mH, RG=25ohm | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-ambient | RθJA | | | 98 | ℃/W | Steady State | 1 |
| N-Ch Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | VGS=0V ID=250μA | 2 |
| N-Ch Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=30V,VGS=0V | 2 |
| N-Ch Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±12V,VDS=0V | 2 |
| N-Ch Gate Threshold Voltage | VGS(th) | 0.5 | 0.9 | 1.3 | V | VDS=VGS,ID=250μA | 2 |
| N-Ch Drain-Source On-State Resistance | RDS(on) | | 25 | 29 | mΩ | VGS=10V, ID=4A | 2 |
| N-Ch Drain-Source On-State Resistance | RDS(on) | | 27 | 32 | mΩ | VGS=4.5V, ID=3A | 2 |
| N-Ch Source-Drain Current (Body Diode) | ISD | | | 5.6 | A | | 2 |
| N-Ch Forward on Voltage | VSD | | | 1.2 | V | VGS=0V,IS=4A | 2 |
| P-Ch Drain-Source Breakdown Voltage | BVDSS | -30 | | | V | VGS=0V ID=-250μA | 3 |
| P-Ch Zero Gate Voltage Drain Current | IDSS | | | -1 | μA | VDS=-30V,VGS=0V | 3 |
| P-Ch Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±12V,VDS=0V | 3 |
| P-Ch Gate Threshold Voltage | VGS(th) | -0.6 | | -1.3 | V | VDS=VGS,ID=-250μA | 3 |
| P-Ch Drain-Source On-State Resistance | RDS(on) | | 43 | 46 | mΩ | VGS=-10V, ID=-4A | 3 |
| P-Ch Drain-Source On-State Resistance | RDS(on) | | 51 | 55 | mΩ | VGS=-4.5V, ID=-3A | 3 |
| P-Ch Source-Drain Current (Body Diode) | ISD | | | -4.2 | A | | 3 |
| P-Ch Forward on Voltage | VSD | | -0.8 | -1.2 | V | VGS=0V,IS=-4A | 3 |
## CAD (KiCad official)
- Symbol: `AGML315ME`
- Footprint: `Package_TO_SOT_SMD:SOT-23-6`
- 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files: `agml315me-etched.step` / `agml315me-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `agml315me.step` / `agml315me.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [AGM Semi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603080311383072768) (13 pp, sha256 `7f09c0ebed1cadf8`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/agml315me-datasheet.pdf)