main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 7d ago
viewers agml315me: viewers · Ray 7d ago
agml315me-etched.glb Publish 0.1.0 · Ray 7d ago
agml315me-etched.step agml315me: factory component page (tier=lcsc) · Ray 7d ago
agml315me-hero.glb agml315me: hero GLB from the etched model (keeps the MPN mark) · Ray 7d ago
agml315me-hero.overlay.json Publish 0.1.0 · Ray 7d ago
agml315me.glb Publish 0.1.0 · Ray 7d ago
agml315me.kicad_mod Publish 0.1.0 · Ray 7d ago
agml315me.kicad_sym Publish 0.1.0 · Ray 7d ago
agml315me.lbr Publish 0.1.0 · Ray 7d ago
agml315me.step Publish 0.1.0 · Ray 7d ago
package.json Publish 0.1.0 · Ray 7d ago
page.json Set visibility: public · Ray 7d ago
README.md Publish 0.1.0 · Ray 7d ago

AGML315ME

AGM Semi · MOSFETs · SOT-23-6L

AGML315ME from AGM Semi, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G1 input Gate of MOSFET 1, gate-source voltage limit ±12V, threshold 0.5V min to 1.3V max for the N-channel at 250µA.
2 S2 passive Source of MOSFET 2, with drain-source voltage rating of 30V for the N-channel device and -30V for the P-channel device.
3 G2 input Gate of MOSFET 2, gate-source voltage limit ±12V, with gate threshold -0.6V to -1.3V for the P-channel at -250µA.
4 D2 passive Drain of MOSFET 2, with continuous drain current of 5.6A for the N-channel and -4.2A for the P-channel at TA=25°C.
5 S1 passive Source of MOSFET 1, with drain-source voltage rating of 30V for the N-channel device and -30V for the P-channel device.
6 D1 passive Drain of MOSFET 1, with continuous drain current of 5.6A for the N-channel and -4.2A for the P-channel at TA=25°C.

Key specifications

Parameter Value
Manufacturer AGM Semi
Package SOT-23-6L
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
N-Ch Drain-Source Voltage VDS 30 V VGS=0V 1
P-Ch Drain-Source Voltage VDS -30 V VGS=0V 1
N-Ch Gate-Source Voltage VGS -12 12 V VDS=0V 1
P-Ch Gate-Source Voltage VGS -12 12 V VDS=0V 1
N-Ch Drain Current-Continuous ID 5.6 A TA=25℃ (Note 1) 1
P-Ch Drain Current-Continuous ID -4.2 A TA=25℃ (Note 1) 1
N-Ch Drain Current-Continuous ID 3.5 A TA=100℃ 1
P-Ch Drain Current-Continuous ID -2.7 A TA=100℃ 1
N-Ch Drain Current-Pulsed IDM (pluse) 3 A Note 2 1
P-Ch Drain Current-Pulsed IDM (pluse) -17 A Note 2 1
N-Ch Total Power Dissipation PD 1.28 W TA=25℃ 1
P-Ch Total Power Dissipation PD 1.28 W TA=25℃ 1
N-Ch Avalanche energy EAS 4 mJ Note 3: TJ=25℃, VDD=15V, Vgs=10V, ID=4A, L=0.5mH, RG=25ohm 1
P-Ch Avalanche energy EAS 4 mJ Note 3: TJ=25℃, VDD=-15V, Vgs=-10V, ID=-4A, L=0.5mH, RG=25ohm 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 98 ℃/W Steady State 1
N-Ch Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V ID=250μA 2
N-Ch Zero Gate Voltage Drain Current IDSS 1 μA VDS=30V,VGS=0V 2
N-Ch Gate-Body Leakage Current IGSS -100 100 nA VGS=±12V,VDS=0V 2
N-Ch Gate Threshold Voltage VGS(th) 0.5 0.9 1.3 V VDS=VGS,ID=250μA 2
N-Ch Drain-Source On-State Resistance RDS(on) 25 29 mΩ VGS=10V, ID=4A 2
N-Ch Drain-Source On-State Resistance RDS(on) 27 32 mΩ VGS=4.5V, ID=3A 2
N-Ch Source-Drain Current (Body Diode) ISD 5.6 A 2
N-Ch Forward on Voltage VSD 1.2 V VGS=0V,IS=4A 2
P-Ch Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V ID=-250μA 3
P-Ch Zero Gate Voltage Drain Current IDSS -1 μA VDS=-30V,VGS=0V 3
P-Ch Gate-Body Leakage Current IGSS -100 100 nA VGS=±12V,VDS=0V 3
P-Ch Gate Threshold Voltage VGS(th) -0.6 -1.3 V VDS=VGS,ID=-250μA 3
P-Ch Drain-Source On-State Resistance RDS(on) 43 46 mΩ VGS=-10V, ID=-4A 3
P-Ch Drain-Source On-State Resistance RDS(on) 51 55 mΩ VGS=-4.5V, ID=-3A 3
P-Ch Source-Drain Current (Body Diode) ISD -4.2 A 3
P-Ch Forward on Voltage VSD -0.8 -1.2 V VGS=0V,IS=-4A 3

CAD (KiCad official)

  • Symbol: AGML315ME
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6L (KiCad packages3D, STEP)
  • 3D model files: agml315me-etched.step / agml315me-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agml315me.step / agml315me.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM Semi datasheet (13 pp, sha256 7f09c0ebed1cadf8, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF