component
AGM628MD
Public Made by Adomby adom
AGM Semi MOSFETs, TO-252-4. Pinout reviewed by a person against the datasheet, KiCad symbol/footprint/3D.
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AGM628MD
AGM Semi · MOSFETs · TO-252-4
AGM628MD from AGM Semi, in a TO-252-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of channel 1 (the 60V, 30A N-channel MOSFET), per the top-view pin drawing. |
| 2 | G1 | input | Gate of channel 1 (N-channel), with VGS rated ±20V. |
| 3 | S2 | passive | Source of channel 2 (the -60V, -25A P-channel MOSFET), per the top-view pin drawing. |
| 4 | G2 | input | Gate of channel 2 (P-channel), with VGS rated ±20V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AGM Semi |
| Package | TO-252-4 |
| Category | Transistors/Thyristors |
| Pins | 5 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-ch Drain-Source Voltage (VGS=0V) | VDS | 60 | V | VGS=0V | 1 | ||
| P-ch Drain-Source Voltage (VGS=0V) | VDS | -60 | V | VGS=0V | 1 | ||
| N-ch Gate-Source Voltage (VDS=0V) | VGS | -20 | 20 | V | VDS=0V | 1 | |
| P-ch Gate-Source Voltage (VDS=0V) | VGS | -20 | 20 | V | VDS=0V | 1 | |
| N-ch Drain Current-Continuous | ID | 30 | A | Tc=25℃ (Note 1) | 1 | ||
| P-ch Drain Current-Continuous | ID | -25 | A | Tc=25℃ (Note 1) | 1 | ||
| N-ch Drain Current-Continuous | ID | 16 | A | Tc=100℃ | 1 | ||
| P-ch Drain Current-Continuous | ID | -12 | A | Tc=100℃ | 1 | ||
| P-ch Drain Current-Pulsed | IDM | -100 | A | Note 2 | 1 | ||
| N-ch Total Power Dissipation | PD | 35 | W | Tc=25℃ | 1 | ||
| P-ch Total Power Dissipation | PD | 35 | W | Tc=25℃ | 1 | ||
| N-ch Total Power Dissipation | PD | 13.8 | W | Tc=100℃ | 1 | ||
| P-ch Total Power Dissipation | PD | 13.8 | W | Tc=100℃ | 1 | ||
| N-ch Avalanche energy | EAS | 49 | mJ | Note 3: TJ=25℃, VDD=30V, Vgs=10V, ID=14A, L=0.5mH, RG=25ohm | 1 | ||
| P-ch Avalanche energy | EAS | 72 | mJ | Note 3: TJ=25℃, VDD=-30V, Vgs=-10V, ID=-17A, L=0.5mH, RG=25ohm | 1 | ||
| Operating Junction and Storage Temperature Range (N and P) | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient (Steady State) | RθJA | 62 | ℃/W | Steady State (Note 1) | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 3.6 | ℃/W | Note 1 | 1 | ||
| N-ch Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V, ID=250μA | 2 | ||
| N-ch Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=60V, VGS=0V | 2 | ||
| N-ch Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| N-ch Gate Threshold Voltage | VGS(th) | 1.2 | 1.5 | 2.2 | V | VDS=VGS, ID=250μA | 2 |
| N-ch Drain-Source On-State Resistance | RDS(on) | 28 | 34 | mΩ | VGS=10V, ID=15A | 2 | |
| N-ch Drain-Source On-State Resistance | RDS(on) | 35 | 50 | mΩ | VGS=4.5V, ID=10A | 2 | |
| N-ch Source-Drain Current (Body Diode) | ISD | 30 | A | 2 | |||
| N-ch Forward on Voltage | VSD | 0.8 | 1.2 | V | VGS=0V, IS=15A | 2 | |
| P-ch Drain-Source Breakdown Voltage | BVDSS | -60 | V | VGS=0V, ID=-250μA | 3 | ||
| P-ch Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-60V, VGS=0V | 3 | ||
| P-ch Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 3 | |
| P-ch Gate Threshold Voltage | VGS(th) | -1.2 | -1.7 | -2.2 | V | VDS=VGS, ID=-250μA | 3 |
| P-ch Drain-Source On-State Resistance | RDS(on) | 41 | 67 | mΩ | VGS=-10V, ID=-15A | 3 | |
| P-ch Drain-Source On-State Resistance | RDS(on) | 52 | 88 | mΩ | VGS=-4.5V, ID=-10A | 3 | |
| P-ch Source-Drain Current (Body Diode) | ISD | -25 | A | 3 | |||
| P-ch Forward on Voltage | VSD | -0.8 | -1.2 | V | VGS=0V, IS=-15A | 3 |
CAD (KiCad official)
- Symbol:
AGM628MD - Footprint:
Package_TO_SOT_SMD:TO-252-4 - 3D model: TO-252-4 (KiCad packages3D, STEP)
- 3D model files:
agm628md-etched.step/agm628md-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);agm628md.step/agm628md.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: AGM Semi datasheet (10 pp, sha256
a4cffd6f84591476, retrieved 2026-10-21, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AGM628MD
**AGM Semi** · MOSFETs · TO-252-4
AGM628MD from AGM Semi, in a TO-252-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of channel 1 (the 60V, 30A N-channel MOSFET), per the top-view pin drawing. |
| 2 | G1 | input | Gate of channel 1 (N-channel), with VGS rated ±20V. |
| 3 | S2 | passive | Source of channel 2 (the -60V, -25A P-channel MOSFET), per the top-view pin drawing. |
| 4 | G2 | input | Gate of channel 2 (P-channel), with VGS rated ±20V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AGM Semi |
| Package | TO-252-4 |
| Category | Transistors/Thyristors |
| Pins | 5 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-ch Drain-Source Voltage (VGS=0V) | VDS | | | 60 | V | VGS=0V | 1 |
| P-ch Drain-Source Voltage (VGS=0V) | VDS | -60 | | | V | VGS=0V | 1 |
| N-ch Gate-Source Voltage (VDS=0V) | VGS | -20 | | 20 | V | VDS=0V | 1 |
| P-ch Gate-Source Voltage (VDS=0V) | VGS | -20 | | 20 | V | VDS=0V | 1 |
| N-ch Drain Current-Continuous | ID | | | 30 | A | Tc=25℃ (Note 1) | 1 |
| P-ch Drain Current-Continuous | ID | -25 | | | A | Tc=25℃ (Note 1) | 1 |
| N-ch Drain Current-Continuous | ID | | | 16 | A | Tc=100℃ | 1 |
| P-ch Drain Current-Continuous | ID | -12 | | | A | Tc=100℃ | 1 |
| P-ch Drain Current-Pulsed | IDM | -100 | | | A | Note 2 | 1 |
| N-ch Total Power Dissipation | PD | | | 35 | W | Tc=25℃ | 1 |
| P-ch Total Power Dissipation | PD | | | 35 | W | Tc=25℃ | 1 |
| N-ch Total Power Dissipation | PD | | | 13.8 | W | Tc=100℃ | 1 |
| P-ch Total Power Dissipation | PD | | | 13.8 | W | Tc=100℃ | 1 |
| N-ch Avalanche energy | EAS | | | 49 | mJ | Note 3: TJ=25℃, VDD=30V, Vgs=10V, ID=14A, L=0.5mH, RG=25ohm | 1 |
| P-ch Avalanche energy | EAS | | | 72 | mJ | Note 3: TJ=25℃, VDD=-30V, Vgs=-10V, ID=-17A, L=0.5mH, RG=25ohm | 1 |
| Operating Junction and Storage Temperature Range (N and P) | TJ,TSTG | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-ambient (Steady State) | RθJA | | | 62 | ℃/W | Steady State (Note 1) | 1 |
| Thermal Resistance Junction-Case | RθJC | | | 3.6 | ℃/W | Note 1 | 1 |
| N-ch Drain-Source Breakdown Voltage | BVDSS | 60 | | | V | VGS=0V, ID=250μA | 2 |
| N-ch Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=60V, VGS=0V | 2 |
| N-ch Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| N-ch Gate Threshold Voltage | VGS(th) | 1.2 | 1.5 | 2.2 | V | VDS=VGS, ID=250μA | 2 |
| N-ch Drain-Source On-State Resistance | RDS(on) | | 28 | 34 | mΩ | VGS=10V, ID=15A | 2 |
| N-ch Drain-Source On-State Resistance | RDS(on) | | 35 | 50 | mΩ | VGS=4.5V, ID=10A | 2 |
| N-ch Source-Drain Current (Body Diode) | ISD | | | 30 | A | | 2 |
| N-ch Forward on Voltage | VSD | | 0.8 | 1.2 | V | VGS=0V, IS=15A | 2 |
| P-ch Drain-Source Breakdown Voltage | BVDSS | -60 | | | V | VGS=0V, ID=-250μA | 3 |
| P-ch Zero Gate Voltage Drain Current | IDSS | | | -1 | μA | VDS=-60V, VGS=0V | 3 |
| P-ch Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 3 |
| P-ch Gate Threshold Voltage | VGS(th) | -1.2 | -1.7 | -2.2 | V | VDS=VGS, ID=-250μA | 3 |
| P-ch Drain-Source On-State Resistance | RDS(on) | | 41 | 67 | mΩ | VGS=-10V, ID=-15A | 3 |
| P-ch Drain-Source On-State Resistance | RDS(on) | | 52 | 88 | mΩ | VGS=-4.5V, ID=-10A | 3 |
| P-ch Source-Drain Current (Body Diode) | ISD | | | -25 | A | | 3 |
| P-ch Forward on Voltage | VSD | | -0.8 | -1.2 | V | VGS=0V, IS=-15A | 3 |
## CAD (KiCad official)
- Symbol: `AGM628MD`
- Footprint: `Package_TO_SOT_SMD:TO-252-4`
- 3D model: TO-252-4 (KiCad packages3D, STEP)
- 3D model files: `agm628md-etched.step` / `agm628md-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `agm628md.step` / `agm628md.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [AGM Semi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8602879032782704640) (10 pp, sha256 `a4cffd6f84591476`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** `ds2sf` (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/agm628md-datasheet.pdf)