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AGM628MD

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AGM Semi MOSFETs, TO-252-4. Pinout reviewed by a person against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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AGM628MD

AGM Semi · MOSFETs · TO-252-4

AGM628MD from AGM Semi, in a TO-252-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of channel 1 (the 60V, 30A N-channel MOSFET), per the top-view pin drawing.
2 G1 input Gate of channel 1 (N-channel), with VGS rated ±20V.
3 S2 passive Source of channel 2 (the -60V, -25A P-channel MOSFET), per the top-view pin drawing.
4 G2 input Gate of channel 2 (P-channel), with VGS rated ±20V.

Key specifications

Parameter Value
Manufacturer AGM Semi
Package TO-252-4
Category Transistors/Thyristors
Pins 5

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
N-ch Drain-Source Voltage (VGS=0V) VDS 60 V VGS=0V 1
P-ch Drain-Source Voltage (VGS=0V) VDS -60 V VGS=0V 1
N-ch Gate-Source Voltage (VDS=0V) VGS -20 20 V VDS=0V 1
P-ch Gate-Source Voltage (VDS=0V) VGS -20 20 V VDS=0V 1
N-ch Drain Current-Continuous ID 30 A Tc=25℃ (Note 1) 1
P-ch Drain Current-Continuous ID -25 A Tc=25℃ (Note 1) 1
N-ch Drain Current-Continuous ID 16 A Tc=100℃ 1
P-ch Drain Current-Continuous ID -12 A Tc=100℃ 1
P-ch Drain Current-Pulsed IDM -100 A Note 2 1
N-ch Total Power Dissipation PD 35 W Tc=25℃ 1
P-ch Total Power Dissipation PD 35 W Tc=25℃ 1
N-ch Total Power Dissipation PD 13.8 W Tc=100℃ 1
P-ch Total Power Dissipation PD 13.8 W Tc=100℃ 1
N-ch Avalanche energy EAS 49 mJ Note 3: TJ=25℃, VDD=30V, Vgs=10V, ID=14A, L=0.5mH, RG=25ohm 1
P-ch Avalanche energy EAS 72 mJ Note 3: TJ=25℃, VDD=-30V, Vgs=-10V, ID=-17A, L=0.5mH, RG=25ohm 1
Operating Junction and Storage Temperature Range (N and P) TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-ambient (Steady State) RθJA 62 ℃/W Steady State (Note 1) 1
Thermal Resistance Junction-Case RθJC 3.6 ℃/W Note 1 1
N-ch Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V, ID=250μA 2
N-ch Zero Gate Voltage Drain Current IDSS 1 μA VDS=60V, VGS=0V 2
N-ch Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
N-ch Gate Threshold Voltage VGS(th) 1.2 1.5 2.2 V VDS=VGS, ID=250μA 2
N-ch Drain-Source On-State Resistance RDS(on) 28 34 mΩ VGS=10V, ID=15A 2
N-ch Drain-Source On-State Resistance RDS(on) 35 50 mΩ VGS=4.5V, ID=10A 2
N-ch Source-Drain Current (Body Diode) ISD 30 A 2
N-ch Forward on Voltage VSD 0.8 1.2 V VGS=0V, IS=15A 2
P-ch Drain-Source Breakdown Voltage BVDSS -60 V VGS=0V, ID=-250μA 3
P-ch Zero Gate Voltage Drain Current IDSS -1 μA VDS=-60V, VGS=0V 3
P-ch Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 3
P-ch Gate Threshold Voltage VGS(th) -1.2 -1.7 -2.2 V VDS=VGS, ID=-250μA 3
P-ch Drain-Source On-State Resistance RDS(on) 41 67 mΩ VGS=-10V, ID=-15A 3
P-ch Drain-Source On-State Resistance RDS(on) 52 88 mΩ VGS=-4.5V, ID=-10A 3
P-ch Source-Drain Current (Body Diode) ISD -25 A 3
P-ch Forward on Voltage VSD -0.8 -1.2 V VGS=0V, IS=-15A 3

CAD (KiCad official)

  • Symbol: AGM628MD
  • Footprint: Package_TO_SOT_SMD:TO-252-4
  • 3D model: TO-252-4 (KiCad packages3D, STEP)
  • 3D model files: agm628md-etched.step / agm628md-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm628md.step / agm628md.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM Semi datasheet (10 pp, sha256 a4cffd6f84591476, retrieved 2026-10-21, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF