# AGM606S

**AGM-Semi** · MOSFETs · SOP-8

AGM606S from AGM-Semi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET (pin 1 marked on package), with VDS rated 60V. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, with VDS rated 60V. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, with VDS rated 60V. |
| 4 | G | input | Gate terminal, with VGS rated ±20V and threshold of 1.2V min to 2.2V max at 250µA. |
| 5 | D | passive | Drain terminal, with continuous current of 14A at TA=25℃ and VDS up to 60V. |
| 6 | D | passive | Drain terminal, with continuous current of 14A at TA=25℃ and VDS up to 60V. |
| 7 | D | passive | Drain terminal, with continuous current of 14A at TA=25℃ and VDS up to 60V. |
| 8 | D | passive | Drain terminal, with continuous current of 14A at TA=25℃ and VDS up to 60V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | AGM-Semi |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 60 | V | VGS=0V | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V | VDS=0V | 1 |
| Drain Current-Continuous | ID |  |  | 14 | A | TA=25℃ (Note 1) | 1 |
| Drain Current-Continuous | ID |  |  | 12 | A | TA=100℃ | 1 |
| Drain Current-Pulsed | IDM (pluse) |  |  | 6 | A | (Note 2) | 1 |
| Maximum Power Dissipation | PD |  |  | 2.5 | w | TA=25℃ | 1 |
| Maximum Power Dissipation | PD |  |  | 1 | w | TA=100℃ | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-ambient (Steady State) | RθJA |  |  | 50 | ℃/W | Steady State | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 60 |  |  | V | VGS=0V ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=60V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.6 | 2.2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 7.2 | 10 | mΩ | VGS=10V, ID=10A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 9.5 | 15 | mΩ | VGS=4.5V, ID=8A | 2 |
| Source-Drain Current (Body Diode) | ISD |  |  | 14 | A |  | 2 |
| Forward on Voltage | VSD |  |  | 1.2 | V | VGS=0V,IS=10A | 2 |
| Reverse Recovery Time | trr |  |  | 32 | ns | IF=10A, dI/dt=100A/µs, TJ=25℃ | 2 |
| Reverse Recovery Charge | Qrr |  |  | 46 | nC | IF=10A, dI/dt=100A/µs, TJ=25℃ | 2 |

## CAD (KiCad official)

- Symbol: `AGM606S`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `agm606s-etched.step` / `agm606s-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `agm606s.step` / `agm606s.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [AGM-Semi datasheet](docs/agm606s-datasheet.pdf) (9 pp, sha256 `a36a95786ecf781b`, retrieved 2026-10-28, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/agm606s-datasheet.pdf)