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AGM606S

Public Made by Adom

by adom

AGM-Semi MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AGM606S

AGM-Semi · MOSFETs · SOP-8

AGM606S from AGM-Semi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET (pin 1 marked on package), with VDS rated 60V.
2 S passive Source terminal of the N-channel MOSFET, with VDS rated 60V.
3 S passive Source terminal of the N-channel MOSFET, with VDS rated 60V.
4 G input Gate terminal, with VGS rated ±20V and threshold of 1.2V min to 2.2V max at 250µA.
5 D passive Drain terminal, with continuous current of 14A at TA=25℃ and VDS up to 60V.
6 D passive Drain terminal, with continuous current of 14A at TA=25℃ and VDS up to 60V.
7 D passive Drain terminal, with continuous current of 14A at TA=25℃ and VDS up to 60V.
8 D passive Drain terminal, with continuous current of 14A at TA=25℃ and VDS up to 60V.

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V VGS=0V 1
Gate-Source Voltage VGS -20 20 V VDS=0V 1
Drain Current-Continuous ID 14 A TA=25℃ (Note 1) 1
Drain Current-Continuous ID 12 A TA=100℃ 1
Drain Current-Pulsed IDM (pluse) 6 A (Note 2) 1
Maximum Power Dissipation PD 2.5 w TA=25℃ 1
Maximum Power Dissipation PD 1 w TA=100℃ 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-ambient (Steady State) RθJA 50 ℃/W Steady State 1
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=60V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1.2 1.6 2.2 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(on) 7.2 10 mΩ VGS=10V, ID=10A 2
Drain-Source On-State Resistance RDS(on) 9.5 15 mΩ VGS=4.5V, ID=8A 2
Source-Drain Current (Body Diode) ISD 14 A 2
Forward on Voltage VSD 1.2 V VGS=0V,IS=10A 2
Reverse Recovery Time trr 32 ns IF=10A, dI/dt=100A/µs, TJ=25℃ 2
Reverse Recovery Charge Qrr 46 nC IF=10A, dI/dt=100A/µs, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: AGM606S
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: agm606s-etched.step / agm606s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm606s.step / agm606s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (9 pp, sha256 a36a95786ecf781b, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF