component
AGM40P26S
Public Made by Adomby adom
AGM-Semi MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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AGM40P26S
AGM-Semi · MOSFETs · SOP-8
AGM40P26S from AGM-Semi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, tied with pins 2 and 3; pin 1 is marked by the dot on the top view. |
| 2 | S | passive | Source of the P-channel MOSFET, tied with pins 1 and 3. |
| 3 | S | passive | Source of the P-channel MOSFET, tied with pins 1 and 2. |
| 4 | G | input | Gate of the P-channel MOSFET; VGS is rated ±20 V and the threshold VGS(th) is -1.2 V min to -2.2 V max at ID=-250µA. |
| 5 | D | passive | Drain of the P-channel MOSFET, tied with pins 6, 7 and 8; VDS is rated -40 V and continuous ID is -6.0 A at Ta=25℃. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied with pins 5, 7 and 8. |
| 7 | D | passive | Drain of the P-channel MOSFET, tied with pins 5, 6 and 8. |
| 8 | D | passive | Drain of the P-channel MOSFET, tied with pins 5, 6 and 7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AGM-Semi |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -40 | V | VGS=0V | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | VDS=0V | 1 | |
| Drain Current-Continuous | ID | -6 | A | Ta=25℃ | 1 | ||
| Drain Current-Continuous | ID | -4 | A | Ta=100℃ | 1 | ||
| Drain Current-Pulsed | IDM | 24 | A | 1 | |||
| Maximum Power Dissipation | PD | 2.5 | W | Ta=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 1 | W | Ta=100℃ | 1 | ||
| Avalanche energy | EAS | 56 | mJ | TJ=25℃,VDD=-20V,Vgs=-10V,ID=-15A, L=0.5mH,RG=25ohm | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 50 | ℃/W | Steady State | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -40 | V | VGS=0V ID=-250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-40V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1.2 | -1.6 | V | VDS=VGS,ID=-250μA | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 32 | 38 | mΩ | VGS=-10V, ID=-10A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 40 | 50 | mΩ | VGS=-4.5V, ID=-6A | 2 | |
| Source-Drain Current (Body Diode) | ISD | -6 | A | 2 | |||
| Forward on Voltage | VSD | -1.2 | V | VGS=0V,IS=-10A | 2 | ||
| Forward Transconductance | gFS | 11 | S | VDS=-5V,ID=-6A | 2 | ||
| Input Capacitance | Ciss | 1100 | pF | VDS=-20V,VGS=0V, F=1MHZ | 2 | ||
| Output Capacitance | Coss | 160 | pF | VDS=-20V,VGS=0V, F=1MHZ | 2 | ||
| Reverse Transfer Capacitance | Crss | 100 | pF | VDS=-20V,VGS=0V, F=1MHZ | 2 | ||
| Turn-on Delay Time | td(on) | 5 | nS | VGS=-10V,VDS=-20V, ID=-5A,RGEN=3.0Ω | 2 | ||
| Turn-on Rise Time | tr | 7 | nS | VGS=-10V,VDS=-20V, ID=-5A,RGEN=3.0Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 25 | nS | VGS=-10V,VDS=-20V, ID=-5A,RGEN=3.0Ω | 2 | ||
| Turn-Off Fall Time | tf | 8 | nS | VGS=-10V,VDS=-20V, ID=-5A,RGEN=3.0Ω | 2 | ||
| Total Gate Charge | Qg | 16 | nC | VGS=-10V, VDS=-20V, ID=-5A | 2 | ||
| Gate-Source Charge | Qgs | 3.5 | nC | VGS=-10V, VDS=-20V, ID=-5A | 2 | ||
| Gate-Drain Charge | Qgd | 3.2 | nC | VGS=-10V, VDS=-20V, ID=-5A | 2 | ||
| Reverse Recovery Time | trr | 11 | ns | Isd=-10A , dI/dt=100A/µs , TJ=25℃ | 2 | ||
| Reverse Recovery Charge | Qrr | 15 | nc | Isd=-10A , dI/dt=100A/µs , TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
AGM40P26S - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
agm40p26s-etched.step/agm40p26s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);agm40p26s.step/agm40p26s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: AGM-Semi datasheet (8 pp, sha256
6885c57532931053, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AGM40P26S
**AGM-Semi** · MOSFETs · SOP-8
AGM40P26S from AGM-Semi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, tied with pins 2 and 3; pin 1 is marked by the dot on the top view. |
| 2 | S | passive | Source of the P-channel MOSFET, tied with pins 1 and 3. |
| 3 | S | passive | Source of the P-channel MOSFET, tied with pins 1 and 2. |
| 4 | G | input | Gate of the P-channel MOSFET; VGS is rated ±20 V and the threshold VGS(th) is -1.2 V min to -2.2 V max at ID=-250µA. |
| 5 | D | passive | Drain of the P-channel MOSFET, tied with pins 6, 7 and 8; VDS is rated -40 V and continuous ID is -6.0 A at Ta=25℃. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied with pins 5, 7 and 8. |
| 7 | D | passive | Drain of the P-channel MOSFET, tied with pins 5, 6 and 8. |
| 8 | D | passive | Drain of the P-channel MOSFET, tied with pins 5, 6 and 7. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AGM-Semi |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | -40 | V | VGS=0V | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | VDS=0V | 1 |
| Drain Current-Continuous | ID | | | -6 | A | Ta=25℃ | 1 |
| Drain Current-Continuous | ID | | | -4 | A | Ta=100℃ | 1 |
| Drain Current-Pulsed | IDM | | | 24 | A | | 1 |
| Maximum Power Dissipation | PD | | | 2.5 | W | Ta=25℃ | 1 |
| Maximum Power Dissipation | PD | | | 1 | W | Ta=100℃ | 1 |
| Avalanche energy | EAS | | | 56 | mJ | TJ=25℃,VDD=-20V,Vgs=-10V,ID=-15A, L=0.5mH,RG=25ohm | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-ambient | RθJA | | | 50 | ℃/W | Steady State | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -40 | | | V | VGS=0V ID=-250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | μA | VDS=-40V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | -1.2 | -1.6 | | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 32 | 38 | mΩ | VGS=-10V, ID=-10A | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 40 | 50 | mΩ | VGS=-4.5V, ID=-6A | 2 |
| Source-Drain Current (Body Diode) | ISD | | | -6 | A | | 2 |
| Forward on Voltage | VSD | | | -1.2 | V | VGS=0V,IS=-10A | 2 |
| Forward Transconductance | gFS | | 11 | | S | VDS=-5V,ID=-6A | 2 |
| Input Capacitance | Ciss | | 1100 | | pF | VDS=-20V,VGS=0V, F=1MHZ | 2 |
| Output Capacitance | Coss | | 160 | | pF | VDS=-20V,VGS=0V, F=1MHZ | 2 |
| Reverse Transfer Capacitance | Crss | | 100 | | pF | VDS=-20V,VGS=0V, F=1MHZ | 2 |
| Turn-on Delay Time | td(on) | | 5 | | nS | VGS=-10V,VDS=-20V, ID=-5A,RGEN=3.0Ω | 2 |
| Turn-on Rise Time | tr | | 7 | | nS | VGS=-10V,VDS=-20V, ID=-5A,RGEN=3.0Ω | 2 |
| Turn-Off Delay Time | td(off) | | 25 | | nS | VGS=-10V,VDS=-20V, ID=-5A,RGEN=3.0Ω | 2 |
| Turn-Off Fall Time | tf | | 8 | | nS | VGS=-10V,VDS=-20V, ID=-5A,RGEN=3.0Ω | 2 |
| Total Gate Charge | Qg | | 16 | | nC | VGS=-10V, VDS=-20V, ID=-5A | 2 |
| Gate-Source Charge | Qgs | | 3.5 | | nC | VGS=-10V, VDS=-20V, ID=-5A | 2 |
| Gate-Drain Charge | Qgd | | 3.2 | | nC | VGS=-10V, VDS=-20V, ID=-5A | 2 |
| Reverse Recovery Time | trr | | 11 | | ns | Isd=-10A , dI/dt=100A/µs , TJ=25℃ | 2 |
| Reverse Recovery Charge | Qrr | | 15 | | nc | Isd=-10A , dI/dt=100A/µs , TJ=25℃ | 2 |
## CAD (KiCad official)
- Symbol: `AGM40P26S`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `agm40p26s-etched.step` / `agm40p26s-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `agm40p26s.step` / `agm40p26s.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [AGM-Semi datasheet](docs/agm40p26s-datasheet.pdf) (8 pp, sha256 `6885c57532931053`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/agm40p26s-datasheet.pdf)