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AGM40P26S

Public Made by Adom

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AGM-Semi MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AGM40P26S

AGM-Semi · MOSFETs · SOP-8

AGM40P26S from AGM-Semi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET, tied with pins 2 and 3; pin 1 is marked by the dot on the top view.
2 S passive Source of the P-channel MOSFET, tied with pins 1 and 3.
3 S passive Source of the P-channel MOSFET, tied with pins 1 and 2.
4 G input Gate of the P-channel MOSFET; VGS is rated ±20 V and the threshold VGS(th) is -1.2 V min to -2.2 V max at ID=-250µA.
5 D passive Drain of the P-channel MOSFET, tied with pins 6, 7 and 8; VDS is rated -40 V and continuous ID is -6.0 A at Ta=25℃.
6 D passive Drain of the P-channel MOSFET, tied with pins 5, 7 and 8.
7 D passive Drain of the P-channel MOSFET, tied with pins 5, 6 and 8.
8 D passive Drain of the P-channel MOSFET, tied with pins 5, 6 and 7.

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -40 V VGS=0V 1
Gate-Source Voltage VGS -20 20 V VDS=0V 1
Drain Current-Continuous ID -6 A Ta=25℃ 1
Drain Current-Continuous ID -4 A Ta=100℃ 1
Drain Current-Pulsed IDM 24 A 1
Maximum Power Dissipation PD 2.5 W Ta=25℃ 1
Maximum Power Dissipation PD 1 W Ta=100℃ 1
Avalanche energy EAS 56 mJ TJ=25℃,VDD=-20V,Vgs=-10V,ID=-15A, L=0.5mH,RG=25ohm 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 50 ℃/W Steady State 1
Drain-Source Breakdown Voltage BVDSS -40 V VGS=0V ID=-250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-40V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) -1.2 -1.6 V VDS=VGS,ID=-250μA 2
Drain-Source On-State Resistance RDS(on) 32 38 mΩ VGS=-10V, ID=-10A 2
Drain-Source On-State Resistance RDS(on) 40 50 mΩ VGS=-4.5V, ID=-6A 2
Source-Drain Current (Body Diode) ISD -6 A 2
Forward on Voltage VSD -1.2 V VGS=0V,IS=-10A 2
Forward Transconductance gFS 11 S VDS=-5V,ID=-6A 2
Input Capacitance Ciss 1100 pF VDS=-20V,VGS=0V, F=1MHZ 2
Output Capacitance Coss 160 pF VDS=-20V,VGS=0V, F=1MHZ 2
Reverse Transfer Capacitance Crss 100 pF VDS=-20V,VGS=0V, F=1MHZ 2
Turn-on Delay Time td(on) 5 nS VGS=-10V,VDS=-20V, ID=-5A,RGEN=3.0Ω 2
Turn-on Rise Time tr 7 nS VGS=-10V,VDS=-20V, ID=-5A,RGEN=3.0Ω 2
Turn-Off Delay Time td(off) 25 nS VGS=-10V,VDS=-20V, ID=-5A,RGEN=3.0Ω 2
Turn-Off Fall Time tf 8 nS VGS=-10V,VDS=-20V, ID=-5A,RGEN=3.0Ω 2
Total Gate Charge Qg 16 nC VGS=-10V, VDS=-20V, ID=-5A 2
Gate-Source Charge Qgs 3.5 nC VGS=-10V, VDS=-20V, ID=-5A 2
Gate-Drain Charge Qgd 3.2 nC VGS=-10V, VDS=-20V, ID=-5A 2
Reverse Recovery Time trr 11 ns Isd=-10A , dI/dt=100A/µs , TJ=25℃ 2
Reverse Recovery Charge Qrr 15 nc Isd=-10A , dI/dt=100A/µs , TJ=25℃ 2

CAD (KiCad official)

  • Symbol: AGM40P26S
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: agm40p26s-etched.step / agm40p26s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm40p26s.step / agm40p26s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (8 pp, sha256 6885c57532931053, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF