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AGM3404E
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AGM-Semi MOSFETs, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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AGM3404E
AGM-Semi · MOSFETs · SOT-23-3
AGM3404E from AGM-Semi, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated at ±20 V (VDS=0V) with a threshold VGS(th) of 1.2 V min to 2.2 V max at ID=250μA. |
| 2 | S | passive | Source; body-diode source-drain current is rated up to 5.6 A with VSD of 1.2 V max at IS=3.5A. |
| 3 | D | passive | Drain; drain-source voltage is rated at 30 V with continuous drain current of 5.6 A at TA=25℃ and RDS(on) of 16 mΩ typ at VGS=10V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AGM-Semi |
| Package | SOT-23-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | VGS=0V | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | VDS=0V | 1 | |
| Drain Current-Continuous | ID | 5.6 | A | TA=25℃ | 1 | ||
| Drain Current-Continuous | ID | 4.5 | A | TA=70℃ | 1 | ||
| Maximum Power Dissipation | PD | 1.2 | w | TA=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 0.8 | w | TA=70℃ | 1 | ||
| Avalanche energy | EAS | 18 | mJ | TJ=25℃,VDD=15V,Vgs=10V,ID=19A,L=0.1mH,RG=25ohm | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient (Steady State) | RθJA | 104 | ℃/W | Steady State | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.5 | 2.2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(on) | 16 | 24 | mΩ | VGS=10V, ID=3.5A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 22 | 38 | mΩ | VGS=4.5V, ID=3.0A | 2 | |
| Source-Drain Current (Body Diode) | ISD | 5.6 | A | 2 | |||
| Forward on Voltage | VSD | 1.2 | V | VGS=0V,IS=3.5A | 2 | ||
| Forward Transconductance | gFS | 6 | S | VDS=5V,ID=3A | 2 | ||
| Input Capacitance | Ciss | 472 | pF | VDS=15V,VGS=0V, F=1MHZ | 2 | ||
| Output Capacitance | Coss | 166 | pF | VDS=15V,VGS=0V, F=1MHZ | 2 | ||
| Reverse Transfer Capacitance | Crss | 109 | pF | VDS=15V,VGS=0V, F=1MHZ | 2 | ||
| Gate resistance | Rg | 13 | Ω | VGS=0V, VDS=0V,f=1.0MHz | 2 | ||
| Total Gate Charge | Qg | 12 | nC | VGS=10V, VDS=15V, ID=5.6A | 2 | ||
| Turn-on Delay Time | td(on) | 5 | nS | VGS=10V,VDS=15V, RGEN=3Ω,ID=5.6A | 2 | ||
| Turn-Off Delay Time | td(off) | 13 | nS | VGS=10V,VDS=15V, RGEN=3Ω,ID=5.6A | 2 |
CAD (KiCad official)
- Symbol:
AGM3404E - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files:
agm3404e-etched.step/agm3404e-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);agm3404e.step/agm3404e.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: AGM-Semi datasheet (8 pp, sha256
19125c9e67b53b2a, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AGM3404E
**AGM-Semi** · MOSFETs · SOT-23-3
AGM3404E from AGM-Semi, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated at ±20 V (VDS=0V) with a threshold VGS(th) of 1.2 V min to 2.2 V max at ID=250μA. |
| 2 | S | passive | Source; body-diode source-drain current is rated up to 5.6 A with VSD of 1.2 V max at IS=3.5A. |
| 3 | D | passive | Drain; drain-source voltage is rated at 30 V with continuous drain current of 5.6 A at TA=25℃ and RDS(on) of 16 mΩ typ at VGS=10V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AGM-Semi |
| Package | SOT-23-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 30 | V | VGS=0V | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | VDS=0V | 1 |
| Drain Current-Continuous | ID | | | 5.6 | A | TA=25℃ | 1 |
| Drain Current-Continuous | ID | | | 4.5 | A | TA=70℃ | 1 |
| Maximum Power Dissipation | PD | | | 1.2 | w | TA=25℃ | 1 |
| Maximum Power Dissipation | PD | | | 0.8 | w | TA=70℃ | 1 |
| Avalanche energy | EAS | | | 18 | mJ | TJ=25℃,VDD=15V,Vgs=10V,ID=19A,L=0.1mH,RG=25ohm | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-ambient (Steady State) | RθJA | | | 104 | ℃/W | Steady State | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | VGS=0V ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=30V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.5 | 2.2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 16 | 24 | mΩ | VGS=10V, ID=3.5A | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 22 | 38 | mΩ | VGS=4.5V, ID=3.0A | 2 |
| Source-Drain Current (Body Diode) | ISD | | | 5.6 | A | | 2 |
| Forward on Voltage | VSD | | | 1.2 | V | VGS=0V,IS=3.5A | 2 |
| Forward Transconductance | gFS | | 6 | | S | VDS=5V,ID=3A | 2 |
| Input Capacitance | Ciss | | 472 | | pF | VDS=15V,VGS=0V, F=1MHZ | 2 |
| Output Capacitance | Coss | | 166 | | pF | VDS=15V,VGS=0V, F=1MHZ | 2 |
| Reverse Transfer Capacitance | Crss | | 109 | | pF | VDS=15V,VGS=0V, F=1MHZ | 2 |
| Gate resistance | Rg | | 13 | | Ω | VGS=0V, VDS=0V,f=1.0MHz | 2 |
| Total Gate Charge | Qg | | 12 | | nC | VGS=10V, VDS=15V, ID=5.6A | 2 |
| Turn-on Delay Time | td(on) | | 5 | | nS | VGS=10V,VDS=15V, RGEN=3Ω,ID=5.6A | 2 |
| Turn-Off Delay Time | td(off) | | 13 | | nS | VGS=10V,VDS=15V, RGEN=3Ω,ID=5.6A | 2 |
## CAD (KiCad official)
- Symbol: `AGM3404E`
- Footprint: `Package_TO_SOT_SMD:SOT-23-3`
- 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files: `agm3404e-etched.step` / `agm3404e-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `agm3404e.step` / `agm3404e.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [AGM-Semi datasheet](docs/agm3404e-datasheet.pdf) (8 pp, sha256 `19125c9e67b53b2a`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/agm3404e-datasheet.pdf)