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AGM3404E

Public Made by Adom

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AGM-Semi MOSFETs, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AGM3404E

AGM-Semi · MOSFETs · SOT-23-3

AGM3404E from AGM-Semi, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage is rated at ±20 V (VDS=0V) with a threshold VGS(th) of 1.2 V min to 2.2 V max at ID=250μA.
2 S passive Source; body-diode source-drain current is rated up to 5.6 A with VSD of 1.2 V max at IS=3.5A.
3 D passive Drain; drain-source voltage is rated at 30 V with continuous drain current of 5.6 A at TA=25℃ and RDS(on) of 16 mΩ typ at VGS=10V.

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package SOT-23-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V VGS=0V 1
Gate-Source Voltage VGS -20 20 V VDS=0V 1
Drain Current-Continuous ID 5.6 A TA=25℃ 1
Drain Current-Continuous ID 4.5 A TA=70℃ 1
Maximum Power Dissipation PD 1.2 w TA=25℃ 1
Maximum Power Dissipation PD 0.8 w TA=70℃ 1
Avalanche energy EAS 18 mJ TJ=25℃,VDD=15V,Vgs=10V,ID=19A,L=0.1mH,RG=25ohm 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-ambient (Steady State) RθJA 104 ℃/W Steady State 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=30V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1.2 1.5 2.2 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(on) 16 24 mΩ VGS=10V, ID=3.5A 2
Drain-Source On-State Resistance RDS(on) 22 38 mΩ VGS=4.5V, ID=3.0A 2
Source-Drain Current (Body Diode) ISD 5.6 A 2
Forward on Voltage VSD 1.2 V VGS=0V,IS=3.5A 2
Forward Transconductance gFS 6 S VDS=5V,ID=3A 2
Input Capacitance Ciss 472 pF VDS=15V,VGS=0V, F=1MHZ 2
Output Capacitance Coss 166 pF VDS=15V,VGS=0V, F=1MHZ 2
Reverse Transfer Capacitance Crss 109 pF VDS=15V,VGS=0V, F=1MHZ 2
Gate resistance Rg 13 Ω VGS=0V, VDS=0V,f=1.0MHz 2
Total Gate Charge Qg 12 nC VGS=10V, VDS=15V, ID=5.6A 2
Turn-on Delay Time td(on) 5 nS VGS=10V,VDS=15V, RGEN=3Ω,ID=5.6A 2
Turn-Off Delay Time td(off) 13 nS VGS=10V,VDS=15V, RGEN=3Ω,ID=5.6A 2

CAD (KiCad official)

  • Symbol: AGM3404E
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3 (KiCad packages3D, STEP)
  • 3D model files: agm3404e-etched.step / agm3404e-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm3404e.step / agm3404e.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (8 pp, sha256 19125c9e67b53b2a, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF