component
AGM310M
Public Made by Adomby adom
AGM Semi MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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AGM310M
AGM Semi · MOSFETs · SOP-8
AGM310M from AGM Semi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (pin 1 at the dot-marked corner of the SOP8 top view). |
| 2 | G1 | input | Gate of MOSFET 1, with VGS rated at ±20V maximum. |
| 3 | S2 | passive | Source of MOSFET 2. |
| 4 | G2 | input | Gate of MOSFET 2, with VGS rated at ±20V maximum. |
| 5 | D2 | passive | Drain of MOSFET 2, tied internally with pin 6. |
| 6 | D2 | passive | Drain of MOSFET 2, tied internally with pin 5. |
| 7 | D1 | passive | Drain of MOSFET 1, tied internally with pin 8. |
| 8 | D1 | passive | Drain of MOSFET 1, tied internally with pin 7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AGM Semi |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Ch) | VDS | 30 | V | VGS=0V, N-Ch, TA=25℃ | 1 | ||
| Drain-Source Voltage (P-Ch) | VDS | -30 | V | VGS=0V, P-Ch, TA=25℃ | 1 | ||
| Gate-Source Voltage (N-Ch) | VGS | -20 | 20 | V | VDS=0V, N-Ch | 1 | |
| Gate-Source Voltage (P-Ch) | VGS | -20 | 20 | V | VDS=0V, P-Ch | 1 | |
| Drain Current-Continuous (N-Ch) | ID | 12 | A | Ta=25℃ (Note 1), N-Ch | 1 | ||
| Drain Current-Continuous (P-Ch) | ID | -12 | A | Ta=25℃ (Note 1), P-Ch | 1 | ||
| Drain Current-Continuous (N-Ch) | ID | 8.1 | A | Ta=100℃, N-Ch | 1 | ||
| Drain Current-Continuous (P-Ch) | ID | -8.1 | A | Ta=100℃, P-Ch | 1 | ||
| Drain Current-Pulsed (N-Ch) | IDM (pluse) | 48 | A | Note 2, N-Ch | 1 | ||
| Drain Current-Pulsed (P-Ch) | IDM (pluse) | -48 | A | Note 2, P-Ch | 1 | ||
| Total Power Dissipation (N-Ch) | PD | 2.5 | W | Ta=25℃, N-Ch | 1 | ||
| Total Power Dissipation (P-Ch) | PD | 2.5 | W | Ta=25℃, P-Ch | 1 | ||
| Total Power Dissipation (N-Ch) | PD | 1 | W | Ta=100℃, N-Ch | 1 | ||
| Total Power Dissipation (P-Ch) | PD | 1 | W | Ta=100℃, P-Ch | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | N-Ch and P-Ch | 1 | |
| Thermal Resistance Junction-ambient (Steady State) | RθJA | 50 | ℃/W | Steady State | 1 | ||
| Drain-Source Breakdown Voltage (N-Ch) | BVDSS | 30 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current (N-Ch) | IDSS | 1 | μA | VDS=30V,VGS=0V | 2 | ||
| Gate-Body Leakage Current (N-Ch) | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage (N-Ch) | VGS(th) | 1.2 | 1.6 | 2.2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance (N-Ch) | RDS(on) | 12 | 15 | mΩ | VGS=10V, ID=10A | 2 | |
| Drain-Source On-State Resistance (N-Ch) | RDS(on) | 15 | 22 | mΩ | VGS=4.5V, ID=5A | 2 | |
| Source-Drain Current (Body Diode, N-Ch) | ISD | 12 | A | 2 | |||
| Forward on Voltage (N-Ch) | VSD | 1.2 | V | VGS=0V,IS=10A | 2 | ||
| Drain-Source Breakdown Voltage (P-Ch) | BVDSS | -30 | V | VGS=0V ID=-250μA | 3 | ||
| Zero Gate Voltage Drain Current (P-Ch) | IDSS | -1 | μA | VDS=-30V,VGS=0V | 3 | ||
| Gate-Body Leakage Current (P-Ch) | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 3 | |
| Gate Threshold Voltage (P-Ch) | VGS(th) | -1.2 | -1.7 | -2.2 | V | VDS=VGS,ID=-250μA | 3 |
| Drain-Source On-State Resistance (P-Ch) | RDS(on) | 16 | 23.1 | mΩ | VGS=-10V, ID=-10A | 3 | |
| Drain-Source On-State Resistance (P-Ch) | RDS(on) | 26 | 32 | mΩ | VGS=-4.5V, ID=-5A | 3 | |
| Source-Drain Current (Body Diode, P-Ch) | ISD | -12 | A | 3 | |||
| Forward on Voltage (P-Ch) | VSD | -1.2 | V | VGS=0V,IS=-10A | 3 |
CAD (KiCad official)
- Symbol:
AGM310M - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
agm310m-etched.step/agm310m-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);agm310m.step/agm310m.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: AGM Semi datasheet (10 pp, sha256
3f0da4fb249104f9, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AGM310M
**AGM Semi** · MOSFETs · SOP-8
AGM310M from AGM Semi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (pin 1 at the dot-marked corner of the SOP8 top view). |
| 2 | G1 | input | Gate of MOSFET 1, with VGS rated at ±20V maximum. |
| 3 | S2 | passive | Source of MOSFET 2. |
| 4 | G2 | input | Gate of MOSFET 2, with VGS rated at ±20V maximum. |
| 5 | D2 | passive | Drain of MOSFET 2, tied internally with pin 6. |
| 6 | D2 | passive | Drain of MOSFET 2, tied internally with pin 5. |
| 7 | D1 | passive | Drain of MOSFET 1, tied internally with pin 8. |
| 8 | D1 | passive | Drain of MOSFET 1, tied internally with pin 7. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AGM Semi |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Ch) | VDS | | | 30 | V | VGS=0V, N-Ch, TA=25℃ | 1 |
| Drain-Source Voltage (P-Ch) | VDS | | | -30 | V | VGS=0V, P-Ch, TA=25℃ | 1 |
| Gate-Source Voltage (N-Ch) | VGS | -20 | | 20 | V | VDS=0V, N-Ch | 1 |
| Gate-Source Voltage (P-Ch) | VGS | -20 | | 20 | V | VDS=0V, P-Ch | 1 |
| Drain Current-Continuous (N-Ch) | ID | | | 12 | A | Ta=25℃ (Note 1), N-Ch | 1 |
| Drain Current-Continuous (P-Ch) | ID | | | -12 | A | Ta=25℃ (Note 1), P-Ch | 1 |
| Drain Current-Continuous (N-Ch) | ID | | | 8.1 | A | Ta=100℃, N-Ch | 1 |
| Drain Current-Continuous (P-Ch) | ID | | | -8.1 | A | Ta=100℃, P-Ch | 1 |
| Drain Current-Pulsed (N-Ch) | IDM (pluse) | | | 48 | A | Note 2, N-Ch | 1 |
| Drain Current-Pulsed (P-Ch) | IDM (pluse) | | | -48 | A | Note 2, P-Ch | 1 |
| Total Power Dissipation (N-Ch) | PD | | | 2.5 | W | Ta=25℃, N-Ch | 1 |
| Total Power Dissipation (P-Ch) | PD | | | 2.5 | W | Ta=25℃, P-Ch | 1 |
| Total Power Dissipation (N-Ch) | PD | | | 1 | W | Ta=100℃, N-Ch | 1 |
| Total Power Dissipation (P-Ch) | PD | | | 1 | W | Ta=100℃, P-Ch | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | ℃ | N-Ch and P-Ch | 1 |
| Thermal Resistance Junction-ambient (Steady State) | RθJA | | | 50 | ℃/W | Steady State | 1 |
| Drain-Source Breakdown Voltage (N-Ch) | BVDSS | 30 | | | V | VGS=0V ID=250μA | 2 |
| Zero Gate Voltage Drain Current (N-Ch) | IDSS | | | 1 | μA | VDS=30V,VGS=0V | 2 |
| Gate-Body Leakage Current (N-Ch) | IGSS | -100 | | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage (N-Ch) | VGS(th) | 1.2 | 1.6 | 2.2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance (N-Ch) | RDS(on) | | 12 | 15 | mΩ | VGS=10V, ID=10A | 2 |
| Drain-Source On-State Resistance (N-Ch) | RDS(on) | | 15 | 22 | mΩ | VGS=4.5V, ID=5A | 2 |
| Source-Drain Current (Body Diode, N-Ch) | ISD | | | 12 | A | | 2 |
| Forward on Voltage (N-Ch) | VSD | | | 1.2 | V | VGS=0V,IS=10A | 2 |
| Drain-Source Breakdown Voltage (P-Ch) | BVDSS | -30 | | | V | VGS=0V ID=-250μA | 3 |
| Zero Gate Voltage Drain Current (P-Ch) | IDSS | | | -1 | μA | VDS=-30V,VGS=0V | 3 |
| Gate-Body Leakage Current (P-Ch) | IGSS | -100 | | 100 | nA | VGS=±20V,VDS=0V | 3 |
| Gate Threshold Voltage (P-Ch) | VGS(th) | -1.2 | -1.7 | -2.2 | V | VDS=VGS,ID=-250μA | 3 |
| Drain-Source On-State Resistance (P-Ch) | RDS(on) | | 16 | 23.1 | mΩ | VGS=-10V, ID=-10A | 3 |
| Drain-Source On-State Resistance (P-Ch) | RDS(on) | | 26 | 32 | mΩ | VGS=-4.5V, ID=-5A | 3 |
| Source-Drain Current (Body Diode, P-Ch) | ISD | | | -12 | A | | 3 |
| Forward on Voltage (P-Ch) | VSD | | | -1.2 | V | VGS=0V,IS=-10A | 3 |
## CAD (KiCad official)
- Symbol: `AGM310M`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `agm310m-etched.step` / `agm310m-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `agm310m.step` / `agm310m.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [AGM Semi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603106961827246080) (10 pp, sha256 `3f0da4fb249104f9`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/agm310m-datasheet.pdf)