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README

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AGM310M

AGM Semi · MOSFETs · SOP-8

AGM310M from AGM Semi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (pin 1 at the dot-marked corner of the SOP8 top view).
2 G1 input Gate of MOSFET 1, with VGS rated at ±20V maximum.
3 S2 passive Source of MOSFET 2.
4 G2 input Gate of MOSFET 2, with VGS rated at ±20V maximum.
5 D2 passive Drain of MOSFET 2, tied internally with pin 6.
6 D2 passive Drain of MOSFET 2, tied internally with pin 5.
7 D1 passive Drain of MOSFET 1, tied internally with pin 8.
8 D1 passive Drain of MOSFET 1, tied internally with pin 7.

Key specifications

Parameter Value
Manufacturer AGM Semi
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N-Ch) VDS 30 V VGS=0V, N-Ch, TA=25℃ 1
Drain-Source Voltage (P-Ch) VDS -30 V VGS=0V, P-Ch, TA=25℃ 1
Gate-Source Voltage (N-Ch) VGS -20 20 V VDS=0V, N-Ch 1
Gate-Source Voltage (P-Ch) VGS -20 20 V VDS=0V, P-Ch 1
Drain Current-Continuous (N-Ch) ID 12 A Ta=25℃ (Note 1), N-Ch 1
Drain Current-Continuous (P-Ch) ID -12 A Ta=25℃ (Note 1), P-Ch 1
Drain Current-Continuous (N-Ch) ID 8.1 A Ta=100℃, N-Ch 1
Drain Current-Continuous (P-Ch) ID -8.1 A Ta=100℃, P-Ch 1
Drain Current-Pulsed (N-Ch) IDM (pluse) 48 A Note 2, N-Ch 1
Drain Current-Pulsed (P-Ch) IDM (pluse) -48 A Note 2, P-Ch 1
Total Power Dissipation (N-Ch) PD 2.5 W Ta=25℃, N-Ch 1
Total Power Dissipation (P-Ch) PD 2.5 W Ta=25℃, P-Ch 1
Total Power Dissipation (N-Ch) PD 1 W Ta=100℃, N-Ch 1
Total Power Dissipation (P-Ch) PD 1 W Ta=100℃, P-Ch 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ N-Ch and P-Ch 1
Thermal Resistance Junction-ambient (Steady State) RθJA 50 ℃/W Steady State 1
Drain-Source Breakdown Voltage (N-Ch) BVDSS 30 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current (N-Ch) IDSS 1 μA VDS=30V,VGS=0V 2
Gate-Body Leakage Current (N-Ch) IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage (N-Ch) VGS(th) 1.2 1.6 2.2 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance (N-Ch) RDS(on) 12 15 mΩ VGS=10V, ID=10A 2
Drain-Source On-State Resistance (N-Ch) RDS(on) 15 22 mΩ VGS=4.5V, ID=5A 2
Source-Drain Current (Body Diode, N-Ch) ISD 12 A 2
Forward on Voltage (N-Ch) VSD 1.2 V VGS=0V,IS=10A 2
Drain-Source Breakdown Voltage (P-Ch) BVDSS -30 V VGS=0V ID=-250μA 3
Zero Gate Voltage Drain Current (P-Ch) IDSS -1 μA VDS=-30V,VGS=0V 3
Gate-Body Leakage Current (P-Ch) IGSS -100 100 nA VGS=±20V,VDS=0V 3
Gate Threshold Voltage (P-Ch) VGS(th) -1.2 -1.7 -2.2 V VDS=VGS,ID=-250μA 3
Drain-Source On-State Resistance (P-Ch) RDS(on) 16 23.1 mΩ VGS=-10V, ID=-10A 3
Drain-Source On-State Resistance (P-Ch) RDS(on) 26 32 mΩ VGS=-4.5V, ID=-5A 3
Source-Drain Current (Body Diode, P-Ch) ISD -12 A 3
Forward on Voltage (P-Ch) VSD -1.2 V VGS=0V,IS=-10A 3

CAD (KiCad official)

  • Symbol: AGM310M
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: agm310m-etched.step / agm310m-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm310m.step / agm310m.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM Semi datasheet (10 pp, sha256 3f0da4fb249104f9, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF