component
AGM30P25M
Public Made by Adomby adom
AGM-Semi MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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AGM30P25M
AGM-Semi · MOSFETs · SOP-8
AGM30P25M from AGM-Semi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (P-channel, VDS -30V, ID -8A rated). |
| 2 | G1 | input | Gate of MOSFET 1, rated ±20V maximum gate-source voltage with threshold of -1.2V to -2.2V. |
| 3 | S2 | passive | Source of MOSFET 2 (P-channel, VDS -30V, ID -8A rated). |
| 4 | G2 | input | Gate of MOSFET 2, rated ±20V maximum gate-source voltage with threshold of -1.2V to -2.2V. |
| 5 | D2 | passive | Drain of MOSFET 2, rated -30V maximum drain-source voltage. |
| 6 | D2 | passive | Drain of MOSFET 2, rated -30V maximum drain-source voltage (tied to pin 5). |
| 7 | D1 | passive | Drain of MOSFET 1, rated -30V maximum drain-source voltage. |
| 8 | D1 | passive | Drain of MOSFET 1, rated -30V maximum drain-source voltage (tied to pin 7). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AGM-Semi |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | VGS=0V | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | VDS=0V | 1 | |
| Drain Current-Continuous | ID | -8 | A | Tc=25℃ | 1 | ||
| Drain Current-Continuous | ID | -4.8 | A | Tc=100℃ | 1 | ||
| Maximum Power Dissipation | PD | 2.5 | w | Tc=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 1 | w | Tc=100℃ | 1 | ||
| Avalanche energy | EAS | 64 | mJ | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 50 | ℃/W | Steady State | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V ID=-250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-30V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1.2 | -1.5 | -2.2 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(on) | 22 | 28 | mΩ | VGS=-10V, ID=-5A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 31.5 | 40 | mΩ | VGS=-4.5V, ID=-4A | 2 | |
| Source-Drain Current (Body Diode) | ISD | -8 | A | 2 | |||
| Forward on Voltage | VSD | -1.2 | V | VGS=0V,IS=-5A | 2 | ||
| Forward Transconductance | gFS | 6 | S | VDS=-5V,ID=-4A | 2 | ||
| Input Capacitance | Ciss | 652 | pF | VDS=-15V,VGS=0V, F=1MHZ | 2 | ||
| Output Capacitance | Coss | 95 | pF | VDS=-15V,VGS=0V, F=1MHZ | 2 | ||
| Reverse Transfer Capacitance | Crss | 85.7 | pF | VDS=-15V,VGS=0V, F=1MHZ | 2 | ||
| Turn-on Delay Time | td(on) | 8 | nS | VGS=-10V,VDS=-15V, ID=-4A,RGEN=3Ω, RL=3.6Ω | 2 | ||
| Turn-on Rise Time | tr | 4 | nS | VGS=-10V,VDS=-15V, ID=-4A,RGEN=3Ω, RL=3.6Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 26 | nS | VGS=-10V,VDS=-15V, ID=-4A,RGEN=3Ω, RL=3.6Ω | 2 | ||
| Turn-Off Fall Time | tf | 12.5 | nS | VGS=-10V,VDS=-15V, ID=-4A,RGEN=3Ω, RL=3.6Ω | 2 | ||
| Total Gate Charge | Qg | 14 | nC | VGS=-10V, VDS=-15V, ID=-1A | 2 | ||
| Gate-Source Charge | Qgs | 1.3 | nC | VGS=-10V, VDS=-15V, ID=-1A | 2 | ||
| Gate-Drain Charge | Qgd | 3 | nC | VGS=-10V, VDS=-15V, ID=-1A | 2 |
CAD (KiCad official)
- Symbol:
AGM30P25M - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
agm30p25m-etched.step/agm30p25m-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);agm30p25m.step/agm30p25m.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: AGM-Semi datasheet (10 pp, sha256
ae1f29586c60c238, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AGM30P25M
**AGM-Semi** · MOSFETs · SOP-8
AGM30P25M from AGM-Semi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (P-channel, VDS -30V, ID -8A rated). |
| 2 | G1 | input | Gate of MOSFET 1, rated ±20V maximum gate-source voltage with threshold of -1.2V to -2.2V. |
| 3 | S2 | passive | Source of MOSFET 2 (P-channel, VDS -30V, ID -8A rated). |
| 4 | G2 | input | Gate of MOSFET 2, rated ±20V maximum gate-source voltage with threshold of -1.2V to -2.2V. |
| 5 | D2 | passive | Drain of MOSFET 2, rated -30V maximum drain-source voltage. |
| 6 | D2 | passive | Drain of MOSFET 2, rated -30V maximum drain-source voltage (tied to pin 5). |
| 7 | D1 | passive | Drain of MOSFET 1, rated -30V maximum drain-source voltage. |
| 8 | D1 | passive | Drain of MOSFET 1, rated -30V maximum drain-source voltage (tied to pin 7). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AGM-Semi |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | -30 | V | VGS=0V | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | VDS=0V | 1 |
| Drain Current-Continuous | ID | | | -8 | A | Tc=25℃ | 1 |
| Drain Current-Continuous | ID | | | -4.8 | A | Tc=100℃ | 1 |
| Maximum Power Dissipation | PD | | | 2.5 | w | Tc=25℃ | 1 |
| Maximum Power Dissipation | PD | | | 1 | w | Tc=100℃ | 1 |
| Avalanche energy | EAS | | | 64 | mJ | | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-ambient | RθJA | | | 50 | ℃/W | Steady State | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -30 | | | V | VGS=0V ID=-250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | μA | VDS=-30V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | -1.2 | -1.5 | -2.2 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 22 | 28 | mΩ | VGS=-10V, ID=-5A | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 31.5 | 40 | mΩ | VGS=-4.5V, ID=-4A | 2 |
| Source-Drain Current (Body Diode) | ISD | | | -8 | A | | 2 |
| Forward on Voltage | VSD | | | -1.2 | V | VGS=0V,IS=-5A | 2 |
| Forward Transconductance | gFS | | 6 | | S | VDS=-5V,ID=-4A | 2 |
| Input Capacitance | Ciss | | 652 | | pF | VDS=-15V,VGS=0V, F=1MHZ | 2 |
| Output Capacitance | Coss | | 95 | | pF | VDS=-15V,VGS=0V, F=1MHZ | 2 |
| Reverse Transfer Capacitance | Crss | | 85.7 | | pF | VDS=-15V,VGS=0V, F=1MHZ | 2 |
| Turn-on Delay Time | td(on) | | 8 | | nS | VGS=-10V,VDS=-15V, ID=-4A,RGEN=3Ω, RL=3.6Ω | 2 |
| Turn-on Rise Time | tr | | 4 | | nS | VGS=-10V,VDS=-15V, ID=-4A,RGEN=3Ω, RL=3.6Ω | 2 |
| Turn-Off Delay Time | td(off) | | 26 | | nS | VGS=-10V,VDS=-15V, ID=-4A,RGEN=3Ω, RL=3.6Ω | 2 |
| Turn-Off Fall Time | tf | | 12.5 | | nS | VGS=-10V,VDS=-15V, ID=-4A,RGEN=3Ω, RL=3.6Ω | 2 |
| Total Gate Charge | Qg | | 14 | | nC | VGS=-10V, VDS=-15V, ID=-1A | 2 |
| Gate-Source Charge | Qgs | | 1.3 | | nC | VGS=-10V, VDS=-15V, ID=-1A | 2 |
| Gate-Drain Charge | Qgd | | 3 | | nC | VGS=-10V, VDS=-15V, ID=-1A | 2 |
## CAD (KiCad official)
- Symbol: `AGM30P25M`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `agm30p25m-etched.step` / `agm30p25m-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `agm30p25m.step` / `agm30p25m.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [AGM-Semi datasheet](docs/agm30p25m-datasheet.pdf) (10 pp, sha256 `ae1f29586c60c238`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/agm30p25m-datasheet.pdf)