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AGM30P25M

Public Made by Adom

by adom

AGM-Semi MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AGM30P25M

AGM-Semi · MOSFETs · SOP-8

AGM30P25M from AGM-Semi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (P-channel, VDS -30V, ID -8A rated).
2 G1 input Gate of MOSFET 1, rated ±20V maximum gate-source voltage with threshold of -1.2V to -2.2V.
3 S2 passive Source of MOSFET 2 (P-channel, VDS -30V, ID -8A rated).
4 G2 input Gate of MOSFET 2, rated ±20V maximum gate-source voltage with threshold of -1.2V to -2.2V.
5 D2 passive Drain of MOSFET 2, rated -30V maximum drain-source voltage.
6 D2 passive Drain of MOSFET 2, rated -30V maximum drain-source voltage (tied to pin 5).
7 D1 passive Drain of MOSFET 1, rated -30V maximum drain-source voltage.
8 D1 passive Drain of MOSFET 1, rated -30V maximum drain-source voltage (tied to pin 7).

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package SOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V VGS=0V 1
Gate-Source Voltage VGS -20 20 V VDS=0V 1
Drain Current-Continuous ID -8 A Tc=25℃ 1
Drain Current-Continuous ID -4.8 A Tc=100℃ 1
Maximum Power Dissipation PD 2.5 w Tc=25℃ 1
Maximum Power Dissipation PD 1 w Tc=100℃ 1
Avalanche energy EAS 64 mJ 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 50 ℃/W Steady State 1
Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V ID=-250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-30V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) -1.2 -1.5 -2.2 V VDS=VGS,ID=-250μA 2
Drain-Source On-State Resistance RDS(on) 22 28 mΩ VGS=-10V, ID=-5A 2
Drain-Source On-State Resistance RDS(on) 31.5 40 mΩ VGS=-4.5V, ID=-4A 2
Source-Drain Current (Body Diode) ISD -8 A 2
Forward on Voltage VSD -1.2 V VGS=0V,IS=-5A 2
Forward Transconductance gFS 6 S VDS=-5V,ID=-4A 2
Input Capacitance Ciss 652 pF VDS=-15V,VGS=0V, F=1MHZ 2
Output Capacitance Coss 95 pF VDS=-15V,VGS=0V, F=1MHZ 2
Reverse Transfer Capacitance Crss 85.7 pF VDS=-15V,VGS=0V, F=1MHZ 2
Turn-on Delay Time td(on) 8 nS VGS=-10V,VDS=-15V, ID=-4A,RGEN=3Ω, RL=3.6Ω 2
Turn-on Rise Time tr 4 nS VGS=-10V,VDS=-15V, ID=-4A,RGEN=3Ω, RL=3.6Ω 2
Turn-Off Delay Time td(off) 26 nS VGS=-10V,VDS=-15V, ID=-4A,RGEN=3Ω, RL=3.6Ω 2
Turn-Off Fall Time tf 12.5 nS VGS=-10V,VDS=-15V, ID=-4A,RGEN=3Ω, RL=3.6Ω 2
Total Gate Charge Qg 14 nC VGS=-10V, VDS=-15V, ID=-1A 2
Gate-Source Charge Qgs 1.3 nC VGS=-10V, VDS=-15V, ID=-1A 2
Gate-Drain Charge Qgd 3 nC VGS=-10V, VDS=-15V, ID=-1A 2

CAD (KiCad official)

  • Symbol: AGM30P25M
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: agm30p25m-etched.step / agm30p25m-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm30p25m.step / agm30p25m.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (10 pp, sha256 ae1f29586c60c238, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF