# AGM308S

**AGM Semi** · MOSFETs · SOP-8

AGM308S from AGM Semi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, tied with pins 2 and 3. |
| 2 | S | passive | Source of the N-channel MOSFET, tied with pins 1 and 3. |
| 3 | S | passive | Source of the N-channel MOSFET, tied with pins 1 and 2. |
| 4 | G | input | Gate; VGS rated ±20 V maximum, threshold 1.2 V to 2.2 V at ID=250 µA. |
| 5 | D | passive | Drain, tied with pins 6, 7 and 8; VDS rated 30 V maximum. |
| 6 | D | passive | Drain, tied with pins 5, 7 and 8; VDS rated 30 V maximum. |
| 7 | D | passive | Drain, tied with pins 5, 6 and 8; VDS rated 30 V maximum. |
| 8 | D | passive | Drain, tied with pins 5, 6 and 7; VDS rated 30 V maximum. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | AGM Semi |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 30 | V | VGS=0V | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V | VDS=0V | 1 |
| Drain Current-Continuous | ID |  |  | 13 | A | TA=25℃ (Note 1) | 1 |
| Drain Current-Continuous | ID |  |  | 5.1 | A | TA=100℃ | 1 |
| Drain Current-Pulsed | IDM |  |  | 52 | A | Note 2, repetitive rating | 1 |
| Maximum Power Dissipation | PD |  |  | 2.5 | w | TA=25℃ | 1 |
| Maximum Power Dissipation | PD |  |  | 1 | w | TA=100℃ | 1 |
| Avalanche energy | EAS |  |  | 132 | mJ | Note 3: TJ=25℃, VDD=20V, Vgs=10V, ID=23A, L=0.5mH, RG=25ohm | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-ambient | RθJA |  |  | 50 | ℃/W | Steady State | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 30 |  |  | V | VGS=0V ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=30V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1.2 |  | 2.2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 6.5 | 9.5 | mΩ | VGS=10V, ID=20A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 10 | 14 | mΩ | VGS=4.5V, ID=15A | 2 |
| Source-Drain Current (Body Diode) | ISD |  |  | 13 | A |  | 2 |
| Forward on Voltage | VSD |  |  | 1.2 | V | VGS=0V,IS=25A | 2 |

## CAD (KiCad official)

- Symbol: `AGM308S`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `agm308s-etched.step` / `agm308s-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `agm308s.step` / `agm308s.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [AGM Semi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590893832970190848) (7 pp, sha256 `be9164d6f56442b2`, retrieved 2026-10-20, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/agm308s-datasheet.pdf)