component
AGM308S
Public Made by Adomby adom
AGM Semi MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 14d ago |
| viewers | 14d ago |
| agm308s-etched.glb | 14d ago |
| agm308s-etched.step | 14d ago |
| agm308s-hero.glb | 14d ago |
| agm308s-hero.overlay.json | 14d ago |
| agm308s.glb | 14d ago |
| agm308s.kicad_mod | 14d ago |
| agm308s.kicad_sym | 14d ago |
| agm308s.lbr | 14d ago |
| agm308s.step | 14d ago |
| package.json | 14d ago |
| page.json | 14d ago |
| README.md | 14d ago |
AGM308S
AGM Semi · MOSFETs · SOP-8
AGM308S from AGM Semi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, tied with pins 2 and 3. |
| 2 | S | passive | Source of the N-channel MOSFET, tied with pins 1 and 3. |
| 3 | S | passive | Source of the N-channel MOSFET, tied with pins 1 and 2. |
| 4 | G | input | Gate; VGS rated ±20 V maximum, threshold 1.2 V to 2.2 V at ID=250 µA. |
| 5 | D | passive | Drain, tied with pins 6, 7 and 8; VDS rated 30 V maximum. |
| 6 | D | passive | Drain, tied with pins 5, 7 and 8; VDS rated 30 V maximum. |
| 7 | D | passive | Drain, tied with pins 5, 6 and 8; VDS rated 30 V maximum. |
| 8 | D | passive | Drain, tied with pins 5, 6 and 7; VDS rated 30 V maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AGM Semi |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | VGS=0V | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | VDS=0V | 1 | |
| Drain Current-Continuous | ID | 13 | A | TA=25℃ (Note 1) | 1 | ||
| Drain Current-Continuous | ID | 5.1 | A | TA=100℃ | 1 | ||
| Drain Current-Pulsed | IDM | 52 | A | Note 2, repetitive rating | 1 | ||
| Maximum Power Dissipation | PD | 2.5 | w | TA=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 1 | w | TA=100℃ | 1 | ||
| Avalanche energy | EAS | 132 | mJ | Note 3: TJ=25℃, VDD=20V, Vgs=10V, ID=23A, L=0.5mH, RG=25ohm | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 50 | ℃/W | Steady State | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 2.2 | V | VDS=VGS,ID=250μA | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 6.5 | 9.5 | mΩ | VGS=10V, ID=20A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 10 | 14 | mΩ | VGS=4.5V, ID=15A | 2 | |
| Source-Drain Current (Body Diode) | ISD | 13 | A | 2 | |||
| Forward on Voltage | VSD | 1.2 | V | VGS=0V,IS=25A | 2 |
CAD (KiCad official)
- Symbol:
AGM308S - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
agm308s-etched.step/agm308s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);agm308s.step/agm308s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: AGM Semi datasheet (7 pp, sha256
be9164d6f56442b2, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).