component
AGM13T15D
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AGM-Semi MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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AGM13T15D
AGM-Semi · MOSFETs · TO-252
AGM13T15D from AGM-Semi, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V with threshold VGS(th) of 2 V min to 4 V max at ID=250μA. |
| 2 | D | passive | Drain, also connected to the exposed tab; drain-source voltage rated 135 V with 58 A continuous current (package limited) at Tc=25℃. |
| 3 | S | passive | Source; body diode continuous current is 58 A with VSD max 1.2 V at IS=20A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AGM-Semi |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 135 | 147 | V | VGS=0V ID=250μA | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=135V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 2.8 | 4 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(on) | 15.5 | 21 | mΩ | VGS=10V, ID=10A | 2 | |
| Source-Drain Current (Body Diode) | ISD | 58 | A | 2 | |||
| Forward on Voltage | VSD | 1.2 | V | VGS=0V,IS=20A | 2 | ||
| Drain-Source Voltage | VDS | 135 | V | VGS=0V, TA=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | VDS=0V | 1 | |
| Continuous Drain Current | ID | 58 | A | Tc=25℃ (Note 1) | 1 | ||
| Continuous Drain Current | ID | 39 | A | Tc=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 232 | A | Note 2 | 1 | ||
| Maximum Power Dissipation | PD | 120 | w | Tc=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 60 | w | Tc=100℃ | 1 | ||
| Avalanche energy | EAS | 21 | mJ | Note 3 | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 62.5 | ℃/W | Steady State | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 1.25 | ℃/W | 1 | |||
| Forward Transconductance | gFS | 17 | S | VDS=5V,ID=5A | 2 | ||
| Input Capacitance | Ciss | 1255 | pF | VDS=40V,VGS=0V, F=1MHZ | 2 | ||
| Output Capacitance | Coss | 510 | pF | VDS=40V,VGS=0V, F=1MHZ | 2 | ||
| Reverse Transfer Capacitance | Crss | 21 | pF | VDS=40V,VGS=0V, F=1MHZ | 2 | ||
| Gate resistance | Rg | 2.8 | Ω | VGS=0V, VDS=0V,f=1.0MHz | 2 | ||
| Total Gate Charge | Qg | 33 | nC | VGS=10V, VDS=75V, ID=20A | 2 | ||
| Reverse Recovery Time | trr | 30 | ns | IF=20A , dI/dt=100A/µs , TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
AGM13T15D - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
agm13t15d-etched.step/agm13t15d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);agm13t15d.step/agm13t15d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: AGM-Semi datasheet (8 pp, sha256
644f4e5df4f852ea, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AGM13T15D
**AGM-Semi** · MOSFETs · TO-252
AGM13T15D from AGM-Semi, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V with threshold VGS(th) of 2 V min to 4 V max at ID=250μA. |
| 2 | D | passive | Drain, also connected to the exposed tab; drain-source voltage rated 135 V with 58 A continuous current (package limited) at Tc=25℃. |
| 3 | S | passive | Source; body diode continuous current is 58 A with VSD max 1.2 V at IS=20A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AGM-Semi |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 135 | 147 | | V | VGS=0V ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=135V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | 2.8 | 4 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 15.5 | 21 | mΩ | VGS=10V, ID=10A | 2 |
| Source-Drain Current (Body Diode) | ISD | | | 58 | A | | 2 |
| Forward on Voltage | VSD | | | 1.2 | V | VGS=0V,IS=20A | 2 |
| Drain-Source Voltage | VDS | | | 135 | V | VGS=0V, TA=25℃ | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | VDS=0V | 1 |
| Continuous Drain Current | ID | | | 58 | A | Tc=25℃ (Note 1) | 1 |
| Continuous Drain Current | ID | | | 39 | A | Tc=100℃ | 1 |
| Pulsed Drain Current | IDM | | | 232 | A | Note 2 | 1 |
| Maximum Power Dissipation | PD | | | 120 | w | Tc=25℃ | 1 |
| Maximum Power Dissipation | PD | | | 60 | w | Tc=100℃ | 1 |
| Avalanche energy | EAS | | | 21 | mJ | Note 3 | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 175 | ℃ | | 1 |
| Thermal Resistance Junction-ambient | RθJA | | | 62.5 | ℃/W | Steady State | 1 |
| Thermal Resistance Junction-Case | RθJC | | | 1.25 | ℃/W | | 1 |
| Forward Transconductance | gFS | | 17 | | S | VDS=5V,ID=5A | 2 |
| Input Capacitance | Ciss | | 1255 | | pF | VDS=40V,VGS=0V, F=1MHZ | 2 |
| Output Capacitance | Coss | | 510 | | pF | VDS=40V,VGS=0V, F=1MHZ | 2 |
| Reverse Transfer Capacitance | Crss | | 21 | | pF | VDS=40V,VGS=0V, F=1MHZ | 2 |
| Gate resistance | Rg | | 2.8 | | Ω | VGS=0V, VDS=0V,f=1.0MHz | 2 |
| Total Gate Charge | Qg | | 33 | | nC | VGS=10V, VDS=75V, ID=20A | 2 |
| Reverse Recovery Time | trr | | 30 | | ns | IF=20A , dI/dt=100A/µs , TJ=25℃ | 2 |
## CAD (KiCad official)
- Symbol: `AGM13T15D`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `agm13t15d-etched.step` / `agm13t15d-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `agm13t15d.step` / `agm13t15d.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [AGM-Semi datasheet](docs/agm13t15d-datasheet.pdf) (8 pp, sha256 `644f4e5df4f852ea`, retrieved 2026-10-26, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/agm13t15d-datasheet.pdf)