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AGM13T15D

AGM-Semi · MOSFETs · TO-252

AGM13T15D from AGM-Semi, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V with threshold VGS(th) of 2 V min to 4 V max at ID=250μA.
2 D passive Drain, also connected to the exposed tab; drain-source voltage rated 135 V with 58 A continuous current (package limited) at Tc=25℃.
3 S passive Source; body diode continuous current is 58 A with VSD max 1.2 V at IS=20A.

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 135 147 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=135V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 2 2.8 4 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(on) 15.5 21 mΩ VGS=10V, ID=10A 2
Source-Drain Current (Body Diode) ISD 58 A 2
Forward on Voltage VSD 1.2 V VGS=0V,IS=20A 2
Drain-Source Voltage VDS 135 V VGS=0V, TA=25℃ 1
Gate-Source Voltage VGS -20 20 V VDS=0V 1
Continuous Drain Current ID 58 A Tc=25℃ (Note 1) 1
Continuous Drain Current ID 39 A Tc=100℃ 1
Pulsed Drain Current IDM 232 A Note 2 1
Maximum Power Dissipation PD 120 w Tc=25℃ 1
Maximum Power Dissipation PD 60 w Tc=100℃ 1
Avalanche energy EAS 21 mJ Note 3 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 175 ℃ 1
Thermal Resistance Junction-ambient RθJA 62.5 ℃/W Steady State 1
Thermal Resistance Junction-Case RθJC 1.25 ℃/W 1
Forward Transconductance gFS 17 S VDS=5V,ID=5A 2
Input Capacitance Ciss 1255 pF VDS=40V,VGS=0V, F=1MHZ 2
Output Capacitance Coss 510 pF VDS=40V,VGS=0V, F=1MHZ 2
Reverse Transfer Capacitance Crss 21 pF VDS=40V,VGS=0V, F=1MHZ 2
Gate resistance Rg 2.8 Ω VGS=0V, VDS=0V,f=1.0MHz 2
Total Gate Charge Qg 33 nC VGS=10V, VDS=75V, ID=20A 2
Reverse Recovery Time trr 30 ns IF=20A , dI/dt=100A/µs , TJ=25℃ 2

CAD (KiCad official)

  • Symbol: AGM13T15D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: agm13t15d-etched.step / agm13t15d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm13t15d.step / agm13t15d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (8 pp, sha256 644f4e5df4f852ea, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF