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AGM12N10D

Public Made by Adom

by adom

AGM-Semi MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AGM12N10D

AGM-Semi · MOSFETs · TO-252

AGM12N10D from AGM-Semi, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, with a threshold of 1.2 V min to 2.2 V max at ID=250μA.
2 D passive Drain; middle lead, which is also the exposed tab, rated for 100 V VDS and 55 A continuous (package limited).
3 S passive Source; the current return path, rated for 55 A continuous body-diode current.

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V VGS=0V 1
Gate-Source Voltage VGS -20 20 V VDS=0V 1
Drain Current-Continuous (Tc=25℃) ID 55 A Tc=25℃, package limited 1
Drain Current-Continuous (Tc=100℃) ID 35 A Tc=100℃ 1
Maximum Power Dissipation (Tc=25℃) PD 83 W Tc=25℃ 1
Maximum Power Dissipation (Tc=100℃) PD 33 W Tc=100℃ 1
Avalanche energy EAS 121 mJ TJ=25℃,VDD=50V,Vgs=10V,ID=22A,L=0.5mH,RG=25ohm 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 50 ℃/W Steady State 1
Thermal Resistance Junction-Case RθJC 1.5 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=100V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1.2 1.8 2.2 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(on) 9.3 13 mΩ VGS=10V, ID=20A 2
Drain-Source On-State Resistance RDS(on) 12 16 mΩ VGS=4.5V, ID=15A 2
Source-Drain Current (Body Diode) ISD 55 A 2
Forward on Voltage VSD 1.2 V VGS=0V,IS=20A 2
Forward Transconductance gFS 25 S VDS=5V,ID=15A 2
Input Capacitance Ciss 1080 pF VDS=50V,VGS=0V, F=1MHZ 2
Output Capacitance Coss 460 pF VDS=50V,VGS=0V, F=1MHZ 2
Reverse Transfer Capacitance Crss 9 pF VDS=50V,VGS=0V, F=1MHZ 2
Gate resistance Rg 11.5 Ω VGS=0V, VDS=0V,f=1.0MHz 2
Total Gate Charge Qg 22 nC VGS=10V, VDS=50V, ID=10A 2
Gate-Source Charge Qgs 3.7 nC VGS=10V, VDS=50V, ID=10A 2
Gate-Drain Charge Qgd 5 nC VGS=10V, VDS=50V, ID=10A 2
Turn-on Delay Time td(on) 16 nS VGS=10V,VDS=50V,ID=10A,RGEN=5Ω 2
Turn-on Rise Time tr 18 nS VGS=10V,VDS=50V,ID=10A,RGEN=5Ω 2
Turn-Off Delay Time td(off) 32 nS VGS=10V,VDS=50V,ID=10A,RGEN=5Ω 2
Turn-Off Fall Time tf 10 nS VGS=10V,VDS=50V,ID=10A,RGEN=5Ω 2
Reverse Recovery Time trr 43 ns Is=20A , VDD=50V,dI/dt=100A/µs 2
Reverse Recovery Charge Qrr 90 nc Is=20A , VDD=50V,dI/dt=100A/µs 2

CAD (KiCad official)

  • Symbol: AGM12N10D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: agm12n10d-etched.step / agm12n10d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm12n10d.step / agm12n10d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (10 pp, sha256 2c290a558c258fab, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF