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AGM12N10D
Public Made by Adomby adom
AGM-Semi MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAGM12N10D
AGM-Semi · MOSFETs · TO-252
AGM12N10D from AGM-Semi, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, with a threshold of 1.2 V min to 2.2 V max at ID=250μA. |
| 2 | D | passive | Drain; middle lead, which is also the exposed tab, rated for 100 V VDS and 55 A continuous (package limited). |
| 3 | S | passive | Source; the current return path, rated for 55 A continuous body-diode current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AGM-Semi |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | VGS=0V | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | VDS=0V | 1 | |
| Drain Current-Continuous (Tc=25℃) | ID | 55 | A | Tc=25℃, package limited | 1 | ||
| Drain Current-Continuous (Tc=100℃) | ID | 35 | A | Tc=100℃ | 1 | ||
| Maximum Power Dissipation (Tc=25℃) | PD | 83 | W | Tc=25℃ | 1 | ||
| Maximum Power Dissipation (Tc=100℃) | PD | 33 | W | Tc=100℃ | 1 | ||
| Avalanche energy | EAS | 121 | mJ | TJ=25℃,VDD=50V,Vgs=10V,ID=22A,L=0.5mH,RG=25ohm | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 50 | ℃/W | Steady State | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 1.5 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=100V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.8 | 2.2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(on) | 9.3 | 13 | mΩ | VGS=10V, ID=20A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 12 | 16 | mΩ | VGS=4.5V, ID=15A | 2 | |
| Source-Drain Current (Body Diode) | ISD | 55 | A | 2 | |||
| Forward on Voltage | VSD | 1.2 | V | VGS=0V,IS=20A | 2 | ||
| Forward Transconductance | gFS | 25 | S | VDS=5V,ID=15A | 2 | ||
| Input Capacitance | Ciss | 1080 | pF | VDS=50V,VGS=0V, F=1MHZ | 2 | ||
| Output Capacitance | Coss | 460 | pF | VDS=50V,VGS=0V, F=1MHZ | 2 | ||
| Reverse Transfer Capacitance | Crss | 9 | pF | VDS=50V,VGS=0V, F=1MHZ | 2 | ||
| Gate resistance | Rg | 11.5 | Ω | VGS=0V, VDS=0V,f=1.0MHz | 2 | ||
| Total Gate Charge | Qg | 22 | nC | VGS=10V, VDS=50V, ID=10A | 2 | ||
| Gate-Source Charge | Qgs | 3.7 | nC | VGS=10V, VDS=50V, ID=10A | 2 | ||
| Gate-Drain Charge | Qgd | 5 | nC | VGS=10V, VDS=50V, ID=10A | 2 | ||
| Turn-on Delay Time | td(on) | 16 | nS | VGS=10V,VDS=50V,ID=10A,RGEN=5Ω | 2 | ||
| Turn-on Rise Time | tr | 18 | nS | VGS=10V,VDS=50V,ID=10A,RGEN=5Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 32 | nS | VGS=10V,VDS=50V,ID=10A,RGEN=5Ω | 2 | ||
| Turn-Off Fall Time | tf | 10 | nS | VGS=10V,VDS=50V,ID=10A,RGEN=5Ω | 2 | ||
| Reverse Recovery Time | trr | 43 | ns | Is=20A , VDD=50V,dI/dt=100A/µs | 2 | ||
| Reverse Recovery Charge | Qrr | 90 | nc | Is=20A , VDD=50V,dI/dt=100A/µs | 2 |
CAD (KiCad official)
- Symbol:
AGM12N10D - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
agm12n10d-etched.step/agm12n10d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);agm12n10d.step/agm12n10d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: AGM-Semi datasheet (10 pp, sha256
2c290a558c258fab, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).