# AGM1099EY

**AGM-Semi** · MOSFETs · SOT-89

AGM1099EY from AGM-Semi, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drives the MOSFET with a Gate-Source voltage limit of ±20 V (VGS(th) 1.2 V min to 2.2 V max at ID=250μA). |
| 2 | D | passive | Drain, also connected to the exposed tab; 100 V maximum Drain-Source voltage and 5.0 A continuous drain current (package limited). |
| 3 | S | passive | Source; body diode conducts source-drain current up to 5.0 A with VSD of 1.2 V max at IS=4A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | AGM-Semi |
| Package | SOT-89 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 100 | V | VGS=0V | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V | VDS=0V | 1 |
| Drain Current-Continuous | ID |  |  | 5 | A | TA=25℃ (Note 1: package limited) | 1 |
| Drain Current-Continuous | ID |  |  | 3.2 | A | TA=100℃ | 1 |
| Drain Current-Pulsed | IDM (pluse) |  |  | 20 | A | Note 2: repetitive rating, pulse width limited by max junction temperature | 1 |
| Maximum Power Dissipation | PD |  |  | 2 | w | TA=25℃ | 1 |
| Avalanche energy | EAS |  |  | 3.2 | mJ | Note 3: TJ=25℃, VDD=50V, Vgs=10V, ID=3.6A, L=0.5mH, RG=25ohm | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-ambient (Steady State) | RθJA |  |  | 62.5 | ℃/W | Steady State | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 100 |  |  | V | VGS=0V ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=100V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.7 | 2.2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 92 | 115 | mΩ | VGS=10V, ID=4A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 108 | 125 | mΩ | VGS=4.5V, ID=3A | 2 |
| Source-Drain Current (Body Diode) | ISD |  |  | 5 | A |  | 2 |
| Forward on Voltage | VSD |  |  | 1.2 | V | VGS=0V,IS=4A | 2 |

## CAD (KiCad official)

- Symbol: `AGM1099EY`
- Footprint: `Package_TO_SOT_SMD:SOT-89-3`
- 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files: `agm1099ey-etched.step` / `agm1099ey-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `agm1099ey.step` / `agm1099ey.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [AGM-Semi datasheet](docs/agm1099ey-datasheet.pdf) (9 pp, sha256 `77aeb5705f7a31cd`, retrieved 2026-10-28, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/agm1099ey-datasheet.pdf)