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AGM1099EY

Public Made by Adom

by adom

AGM-Semi MOSFETs, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AGM1099EY

AGM-Semi · MOSFETs · SOT-89

AGM1099EY from AGM-Semi, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; drives the MOSFET with a Gate-Source voltage limit of ±20 V (VGS(th) 1.2 V min to 2.2 V max at ID=250μA).
2 D passive Drain, also connected to the exposed tab; 100 V maximum Drain-Source voltage and 5.0 A continuous drain current (package limited).
3 S passive Source; body diode conducts source-drain current up to 5.0 A with VSD of 1.2 V max at IS=4A.

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package SOT-89
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V VGS=0V 1
Gate-Source Voltage VGS -20 20 V VDS=0V 1
Drain Current-Continuous ID 5 A TA=25℃ (Note 1: package limited) 1
Drain Current-Continuous ID 3.2 A TA=100℃ 1
Drain Current-Pulsed IDM (pluse) 20 A Note 2: repetitive rating, pulse width limited by max junction temperature 1
Maximum Power Dissipation PD 2 w TA=25℃ 1
Avalanche energy EAS 3.2 mJ Note 3: TJ=25℃, VDD=50V, Vgs=10V, ID=3.6A, L=0.5mH, RG=25ohm 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-ambient (Steady State) RθJA 62.5 ℃/W Steady State 1
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=100V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1.2 1.7 2.2 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(on) 92 115 mΩ VGS=10V, ID=4A 2
Drain-Source On-State Resistance RDS(on) 108 125 mΩ VGS=4.5V, ID=3A 2
Source-Drain Current (Body Diode) ISD 5 A 2
Forward on Voltage VSD 1.2 V VGS=0V,IS=4A 2

CAD (KiCad official)

  • Symbol: AGM1099EY
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: agm1099ey-etched.step / agm1099ey-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm1099ey.step / agm1099ey.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (9 pp, sha256 77aeb5705f7a31cd, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF