component
AGM056N10H
Public Made by Adomby adom
AGM Semi MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 16d ago |
| viewers | 16d ago |
| agm056n10h-etched.glb | 16d ago |
| agm056n10h-etched.step | 16d ago |
| agm056n10h-hero.glb | 16d ago |
| agm056n10h-hero.overlay.json | 16d ago |
| agm056n10h.glb | 16d ago |
| agm056n10h.kicad_mod | 16d ago |
| agm056n10h.kicad_sym | 16d ago |
| agm056n10h.lbr | 16d ago |
| agm056n10h.step | 16d ago |
| package.json | 16d ago |
| page.json | 16d ago |
| README.md | 16d ago |
AGM056N10H
AGM Semi · MOSFETs · TO-263
AGM056N10H from AGM Semi, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V (VDS=0V), threshold VGS(th) 2 V min to 4 V max at ID=250µA. |
| 2 | D | passive | Drain (also the exposed tab); drain-source voltage rated 100 V, continuous drain current 140 A at Tc=25℃ (package limited). |
| 3 | S | passive | Source; body-diode source-drain current up to 140 A, with RDS(on) 5.1 mΩ typ and 6.4 mΩ max at VGS=10V, ID=40A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AGM Semi |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=100V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 2.8 | 4 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(on) | 5.1 | 6.4 | mΩ | VGS=10V, ID=40A | 2 | |
| Source-Drain Current (Body Diode) | ISD | 140 | A | 2 | |||
| Forward on Voltage | VSD | 0.9 | 1.2 | V | VGS=0V,IS=40A | 2 | |
| Drain-Source Voltage | VDS | 100 | V | VGS=0V | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | VDS=0V | 1 | |
| Drain Current-Continuous | ID | 140 | A | Tc=25℃ (Note 1) | 1 | ||
| Drain Current-Continuous | ID | 95 | A | Tc=100℃ | 1 | ||
| Drain Current-Pulsed | IDM (pluse) | 560 | A | Note 2 | 1 | ||
| Maximum Power Dissipation | PD | 227 | w | Tc=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 91 | w | Tc=100℃ | 1 | ||
| Avalanche energy | EAS | 625 | mJ | Note 3 | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient (Steady State) | RθJA | 65 | ℃/W | Steady State | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 0.55 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
AGM056N10H - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
agm056n10h-etched.step/agm056n10h-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);agm056n10h.step/agm056n10h.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: AGM Semi datasheet (8 pp, sha256
f2cd5c4d5a0172f1, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).