component
AFGHL50T65SQD
Public Made by Adomby adom
onsemi IGBTs, TO-247-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
123456789101112131415161718192021222324252627282930313233343536373839404142434445464748495051525354555657585960616263646566676869707172737475767778798081828384858687888990919293949596979899100101102103104105106107108109110111112113114115116117118119120121122123124125126127128129130131132133134135136137138139140141142143144145146147148149150151152153154155156157158159160161162163164165166167168169170171172173174175176177178179180181182183184185186187188189190191192193194195196197198199200201202203204205206207208209210211212213214215216217218219220221222223224225226227228229230231232233234235236237238239240241242243244245246247248249250251252253254255256257258259260261262263264265266267268269270271272273274275276277278279280281282283284285286287288289290291292293294295296297298299300301302303304305306307308309310311312313314315316317318319320321322323324325326327328329330331332333334335336337338339340341342343344345346347348349350351352353354355356357358359360361362363364365366367368369370371372373374375376377378379380381382383384385386387388389390391392393394395396397398399400401402403404405406407408409410411412413414415416417418419420421422423424425426427428429430431432433434435436437438439440441442443444445446447448449450451452453454455456457458459460461462463464465466467468469470471472473474475476477478479
{
"schema_version": 1,
"type": "component",
"slug": "afghl50t65sqd",
"title": "AFGHL50T65SQD",
"brief": "onsemi IGBTs, TO-247-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
"version": "0.1.0",
"license": "CC-BY-SA-4.0",
"tags": [
"component",
"triode-mos tube-transistor",
"afghl50t65sqd",
"factory-2.0.0",
"extractor-text"
],
"component": {
"mpn": "AFGHL50T65SQD",
"manufacturer": "onsemi",
"package": "TO-247-3L",
"pin_count": 3,
"category": "Triode/MOS Tube/Transistor",
"subcategory": "IGBTs",
"datasheet": "https://www.onsemi.com/pdf/datasheet/afghl50t65sq-d.pdf",
"parts": {
"symbol": "afghl50t65sqd.kicad_sym",
"footprint": "afghl50t65sqd.kicad_mod",
"model_3d": "afghl50t65sqd-hero.glb",
"model_3d_plain": "afghl50t65sqd-etched.glb",
"model_3d_step": "afghl50t65sqd-etched.step",
"model_3d_step_plain": "afghl50t65sqd.step",
"lbr": "afghl50t65sqd.lbr"
},
"distributor_links": {
"lcsc": "C898108",
"digikey": "488-AFGHL50T65SQD-ND",
"mouser": "863-AFGHL50T65SQD"
},
"distributor_check": {
"checked_at": "2026-10-28T22:51:11Z",
"source": "Component Ocean /api/assign-pns",
"digikey": {
"pn": "488-AFGHL50T65SQD-ND",
"status": "found",
"lifecycle": "Active"
},
"mouser": {
"pn": "863-AFGHL50T65SQD",
"status": "found"
}
},
"pins": [
{
"number": "1",
"name": "G",
"type": "input",
"description": "Gate; gate-to-emitter voltage is rated ±20 V with ±30 V transient, and the typical threshold VGE(th) is 4.9 V (3.4 V min, 6.4 V max)."
},
{
"number": "2",
"name": "C",
"type": "passive",
"description": "Collector (also the metal tab); collector-to-emitter voltage is rated 650 V, with 80 A at TC = 25°C and 50 A at TC = 100°C."
},
{
"number": "3",
"name": "E",
"type": "passive",
"description": "Emitter, the IGBT emitter and anti-parallel diode anode; the diode forward current is rated 80 A at TC = 25°C and 30 A at TC = 100°C."
}
],
"provenance": {
"extractor": "extract_pins 0.3",
"factory_chain": {
"factory": "2.0.0",
"extractor": "extract_pins 0.3",
"primary_model": "claude-sonnet-5-5",
"primary_mode": "text+vision",
"consensus_model": "claude-opus-5-5",
"consensus": "agreed",
"guards": "pin_guards 0.1: passed",
"guard_notes": [
"extractor flagged: The pin-to-number mapping comes from the G, C, E labels on the page 1 package picture, read left to ",
"vision extraction: provenance cannot be text-verified; needs consensus"
],
"pages_sent": 9,
"cost_usd": 0.1594,
"at": "2026-10-28T22:51:01"
},
"datasheet": {
"url": "https://www.onsemi.com/pdf/datasheet/afghl50t65sq-d.pdf",
"pages": 9,
"sha256": "fdb65b491466ac23",
"source_tier": "mfr"
},
"cad": "KiCad official (CC-BY-SA 4.0)",
"pins": {
"total": 3,
"described": 3,
"cites_pages": true,
"refuses_to_fabricate": true
}
},
"viewers": {
"symbol": "viewers/symbol.html",
"footprint": "viewers/footprint.html"
},
"models_3d": [
{
"file": "afghl50t65sqd.step",
"role": "plain",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "body on z = 0, through-hole leads below",
"extents_mm": [
15.9,
5.03,
41.1
],
"zmin_mm": -15.83,
"centre_offset_mm": 0.185,
"footprint_binding": "identity",
"sha256": "ec0db59b04bcea2e0db6f976bf3ab8644e761c8b0059239f77f4febd6dc9eff4",
"checked": "2026-10-28",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
},
{
"file": "afghl50t65sqd-etched.step",
"role": "eda",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "body on z = 0, through-hole leads below",
"extents_mm": [
15.9,
5.03,
41.1
],
"zmin_mm": -15.83,
"centre_offset_mm": 0.185,
"footprint_binding": "identity",
"sha256": "ef561c658dfa2d84c7756f00de01a714df1cd350d1dc6ec62818d0aea2d6f3e6",
"checked": "2026-10-28",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
}
]
},
"metadata": {
"specs": {
"Manufacturer": "onsemi",
"Package": "TO-247-3L",
"Category": "Triode/MOS Tube/Transistor",
"Pins": "3"
},
"characteristics": {
"version": 1,
"source": "datasheet",
"datasheet_sha256": "fdb65b491466ac2313f973555d844254da468b10b0b2a9dca82ba5f841eb9dae",
"rows": [
{
"name": "Collector-to-Emitter Voltage",
"symbol": "VCES",
"kind": "absolute_maximum",
"unit": "V",
"min": null,
"typ": null,
"max": 650,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Gate-to-Emitter Voltage",
"symbol": "VGES",
"kind": "absolute_maximum",
"unit": "V",
"min": -20,
"typ": null,
"max": 20,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Transient Gate-to-Emitter Voltage",
"symbol": "VGES",
"kind": "absolute_maximum",
"unit": "V",
"min": -30,
"typ": null,
"max": 30,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Collector Current",
"symbol": "IC",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 80,
"conditions": "TC = 25°C (Note 1)",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Collector Current",
"symbol": "IC",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 50,
"conditions": "TC = 100°C (Note 1)",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Pulsed Collector Current (Note 2)",
"symbol": "ILM",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 200,
"conditions": "VCC = 400 V, VGE = 15 V, IC = 200 A, RG = 15, Inductive Load",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Pulsed Collector Current (Note 3)",
"symbol": "ICM",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 200,
"conditions": "Repetitive rating: pulse width limited by max. junction temperature",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Diode Forward Current (Note 1)",
"symbol": "IF",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 80,
"conditions": "TC = 25°C",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Diode Forward Current (Note 1)",
"symbol": "IF",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 30,
"conditions": "TC = 100°C",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Pulsed Diode Maximum Forward Current",
"symbol": "IFM",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 200,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Maximum Power Dissipation",
"symbol": "PD",
"kind": "absolute_maximum",
"unit": "W",
"min": null,
"typ": null,
"max": 268,
"conditions": "TC = 25°C",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Maximum Power Dissipation",
"symbol": "PD",
"kind": "absolute_maximum",
"unit": "W",
"min": null,
"typ": null,
"max": 134,
"conditions": "TC = 100°C",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Operating Junction / Storage Temperature Range",
"symbol": "TJ, TSTG",
"kind": "absolute_maximum",
"unit": "°C",
"min": -55,
"typ": null,
"max": 175,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Maximum Lead Temp. for Soldering Purposes",
"symbol": "TL",
"kind": "absolute_maximum",
"unit": "°C",
"min": null,
"typ": null,
"max": 300,
"conditions": "1/8″ from case for 5 seconds",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Thermal resistance junction-to-case, for IGBT",
"symbol": "RJC",
"kind": "thermal",
"unit": "°C/W",
"min": null,
"typ": null,
"max": 0.56,
"conditions": "",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Thermal resistance junction-to-case, for Diode",
"symbol": "RJC",
"kind": "thermal",
"unit": "°C/W",
"min": null,
"typ": null,
"max": 1.25,
"conditions": "",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Thermal resistance junction-to-ambient",
"symbol": "RJA",
"kind": "thermal",
"unit": "°C/W",
"min": null,
"typ": null,
"max": 40,
"conditions": "",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Collector-emitter breakdown voltage, gate-emitter short-circuited",
"symbol": "BVCES",
"kind": "electrical",
"unit": "V",
"min": 650,
"typ": null,
"max": null,
"conditions": "VGE = 0 V, IC = 1 mA",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Collector-emitter cut-off current, gate-emitter short-circuited",
"symbol": "ICES",
"kind": "electrical",
"unit": "A",
"min": null,
"typ": null,
"max": 250,
"conditions": "VGE = 0 V, VCE = 650 V",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate leakage current, collector-emitter short-circuited",
"symbol": "IGES",
"kind": "electrical",
"unit": "nA",
"min": -400,
"typ": null,
"max": 400,
"conditions": "VGE = 20 V, VCE = 0 V",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate-emitter threshold voltage",
"symbol": "VGE(th)",
"kind": "electrical",
"unit": "V",
"min": 3.4,
"typ": 4.9,
"max": 6.4,
"conditions": "VGE = VCE, IC = 50 mA",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Collector-emitter saturation voltage",
"symbol": "VCE(sat)",
"kind": "electrical",
"unit": "V",
"min": null,
"typ": 1.6,
"max": 2.1,
"conditions": "VGE = 15 V, IC = 50 A",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Diode Forward Voltage",
"symbol": "VFM",
"kind": "electrical",
"unit": "V",
"min": null,
"typ": 2,
"max": 2.6,
"conditions": "IF = 30 A, TC = 25°C",
"source_page": 3,
"source": "datasheet"
}
]
}
},
"variants": [],
"sections": [
"hero",
"viewers",
"readme",
"breadcrumbs",
"info"
],
"discovery_triggers": [
"afghl50t65sqd"
],
"discovery_pitch": "AFGHL50T65SQD (onsemi) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
"author": {
"name": "Ray",
"email": "[email protected]"
},
"dependencies": {},
"hero": {
"type": "image",
"path": "docs/hero.png"
},
"files": [
"page.json",
"README.md",
"afghl50t65sqd.kicad_sym",
"afghl50t65sqd.kicad_mod",
"afghl50t65sqd.glb",
"afghl50t65sqd.step",
"afghl50t65sqd.lbr",
"docs/hero.png",
"docs/afghl50t65sqd-datasheet.pdf",
"viewers/symbol.html",
"viewers/footprint.html",
"afghl50t65sqd-hero.glb",
"afghl50t65sqd-hero.overlay.json",
"afghl50t65sqd-etched.glb"
],
"visibility": {
"public": true
}
}