component

AFGHL50T65SQD

Public Made by Adom

by adom

onsemi IGBTs, TO-247-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AFGHL50T65SQD

onsemi · IGBTs · TO-247-3L

AFGHL50T65SQD from onsemi, in a TO-247-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-to-emitter voltage is rated ±20 V with ±30 V transient, and the typical threshold VGE(th) is 4.9 V (3.4 V min, 6.4 V max).
2 C passive Collector (also the metal tab); collector-to-emitter voltage is rated 650 V, with 80 A at TC = 25°C and 50 A at TC = 100°C.
3 E passive Emitter, the IGBT emitter and anti-parallel diode anode; the diode forward current is rated 80 A at TC = 25°C and 30 A at TC = 100°C.

Key specifications

Parameter Value
Manufacturer onsemi
Package TO-247-3L
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-to-Emitter Voltage VCES 650 V 1
Gate-to-Emitter Voltage VGES -20 20 V 1
Transient Gate-to-Emitter Voltage VGES -30 30 V 1
Collector Current IC 80 A TC = 25°C (Note 1) 1
Collector Current IC 50 A TC = 100°C (Note 1) 1
Pulsed Collector Current (Note 2) ILM 200 A VCC = 400 V, VGE = 15 V, IC = 200 A, RG = 15, Inductive Load 1
Pulsed Collector Current (Note 3) ICM 200 A Repetitive rating: pulse width limited by max. junction temperature 1
Diode Forward Current (Note 1) IF 80 A TC = 25°C 1
Diode Forward Current (Note 1) IF 30 A TC = 100°C 1
Pulsed Diode Maximum Forward Current IFM 200 A 1
Maximum Power Dissipation PD 268 W TC = 25°C 1
Maximum Power Dissipation PD 134 W TC = 100°C 1
Operating Junction / Storage Temperature Range TJ, TSTG -55 175 °C 1
Maximum Lead Temp. for Soldering Purposes TL 300 °C 1/8″ from case for 5 seconds 1
Thermal resistance junction-to-case, for IGBT RJC 0.56 °C/W 2
Thermal resistance junction-to-case, for Diode RJC 1.25 °C/W 2
Thermal resistance junction-to-ambient RJA 40 °C/W 2
Collector-emitter breakdown voltage, gate-emitter short-circuited BVCES 650 V VGE = 0 V, IC = 1 mA 2
Collector-emitter cut-off current, gate-emitter short-circuited ICES 250 A VGE = 0 V, VCE = 650 V 2
Gate leakage current, collector-emitter short-circuited IGES -400 400 nA VGE = 20 V, VCE = 0 V 2
Gate-emitter threshold voltage VGE(th) 3.4 4.9 6.4 V VGE = VCE, IC = 50 mA 2
Collector-emitter saturation voltage VCE(sat) 1.6 2.1 V VGE = 15 V, IC = 50 A 2
Diode Forward Voltage VFM 2 2.6 V IF = 30 A, TC = 25°C 3

CAD (KiCad official)

  • Symbol: AFGHL50T65SQD
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3L (KiCad packages3D, STEP)
  • 3D model files: afghl50t65sqd-etched.step / afghl50t65sqd-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); afghl50t65sqd.step / afghl50t65sqd.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (9 pp, sha256 fdb65b491466ac23, retrieved 2026-10-28, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF